Transparent conductive Nb-doped TiO2 films deposited by RF magnetron co-sputtering.

In this work, Nb-doped TiO 2 films were deposited on glass substrates utilizing RF magnetron co-sputtering with a TiO 2 target and a Nb target. In order to study the effect of Nb concentration, four groups of films with different Nb concentration were prepared and annealed in N 2 at 500 °C. Crystal structure, surface morphology, electrical and optical property of the films were characterized. The lowest resistivity was measured to be 1.2 × 10 −3 Ω cm at the Nb concentration of 7.0 at.%. Meanwhile, Hall mobility and carrier density were 2.0 cm 2 /Vs and 2.6 × 10 21 cm −3 , respectively. [ABSTRACT FROM AUTHOR]