A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18-\mum SiGe BiCMOS for Multi-Band Applications.

MLA

Ma, Kaixue, et al. “A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18-\mum SiGe BiCMOS for Multi-Band Applications.” IEEE Transactions on Microwave Theory & Techniques, vol. 63, no. 12b, Dec. 2015, pp. 4395–405. EBSCOhost, https://doi.org/10.1109/TMTT.2015.2495129.

APA

Ma, K., Kumar, T. B., & Yeo, K. S. (2015). A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18-\mum SiGe BiCMOS for Multi-Band Applications. IEEE Transactions on Microwave Theory & Techniques, 63(12b), 4395–4405. https://doi.org/10.1109/TMTT.2015.2495129

Chicago

Ma, Kaixue, Thangarasu Bharatha Kumar, and Kiat Seng Yeo. 2015. “A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18-\mum SiGe BiCMOS for Multi-Band Applications.” IEEE Transactions on Microwave Theory & Techniques 63 (12b): 4395–4405. doi:10.1109/TMTT.2015.2495129.