Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon.

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit<0.1%) makes the ScN/Sc2O3/Y2O3 buffer system a very promising template for the growth of high quality GaN layers on silicon. [ABSTRACT FROM AUTHOR]