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Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells.
- Source :
-
Solid-State Electronics . Jan2016 Part B, Vol. 115, p92-102. 11p. - Publication Year :
- 2016
-
Abstract
- We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ , the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In 0.53 Ga 0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III–V semiconductor band structure calculation methods and calibrated band parameters for device simulations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 115
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 111141527
- Full Text :
- https://doi.org/10.1016/j.sse.2015.09.005