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Temperature Dependence of Impact Ionization in GaAs.
- Source :
-
IEEE Transactions on Electron Devices . Oct2003, Vol. 50 Issue 10, p2027-2031. 5p. 1 Chart, 8 Graphs. - Publication Year :
- 2003
-
Abstract
- The temperature dependence of electron and hole impact ionization in gallium arsenide (GaAs) has been determined from photomultiplication measurements at temperatures between 20 K and 500 K. It is found that impact ionization is suppressed by increasing temperature because of the increase in phonon scattering. Temperature variations in avalanche multiplication are shown to decrease with decreasing avalanching region width, and the effect is interpreted in terms of the reduced phonon scattering in the correspondingly reduced ionization path length. Effective electron and hole ionization coefficients are derived and are shown to predict accurately multiplication characteristics and breakdown voltage as a function of temperature in p[sup +] in[sup +] diodes with i-regions as thin as 0.5 µm. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM arsenide
*ELECTRONS
*IONIZATION (Atomic physics)
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 50
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 11087425
- Full Text :
- https://doi.org/10.1109/TED.2003.816918