Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes.

MLA

Zhao, Jingtao, et al. “Effects of Rapid Thermal Annealing on the Electrical Properties and the Strain of the AlGaN/AlN/GaN Heterostructure Field-Effect Transistors with Ni/Au Gate Electrodes.” Applied Physics A: Materials Science & Processing, vol. 121, no. 3, Nov. 2015, pp. 1271–76. EBSCOhost, https://doi.org/10.1007/s00339-015-9504-6.

APA

Zhao, J., Lin, Z., Chen, Q., Yang, M., Cui, P., Lv, Y., & Feng, Z. (2015). Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes. Applied Physics A: Materials Science & Processing, 121(3), 1271–1276. https://doi.org/10.1007/s00339-015-9504-6

Chicago

Zhao, Jingtao, Zhaojun Lin, Quanyou Chen, Ming Yang, Peng Cui, Yuanjie Lv, and Zhihong Feng. 2015. “Effects of Rapid Thermal Annealing on the Electrical Properties and the Strain of the AlGaN/AlN/GaN Heterostructure Field-Effect Transistors with Ni/Au Gate Electrodes.” Applied Physics A: Materials Science & Processing 121 (3): 1271–76. doi:10.1007/s00339-015-9504-6.