Ferroelectric and piezoelectric properties of Ba(Ti0.89Sn0.11)O3 thin films prepared by sol–gel method.

We developed a new type of lead-free ferroelectric film: Ba(Ti 0.89 Sn 0.11 )O 3 (BTS) with a chemical constituent at its quasi-quadruple point in the phase diagram of BaTiO 3 – x BaSnO 3 . The BTS film was prepared on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrate by means of the sol–gel method. The results show that the as-prepared BTS thin film has a perovskite structure with preferred (1 1 0) orientation; a highly converse piezoelectric coefficient of d 33 ∼135 pm/V; and dielectric permittivity and dielectric loss of ∼2000 and ∼0.04, respectively, indicating that this new type of lead-free BTS film can probably be used to replace the conventional BaSrTiO 3 and PbZrTiO 3 films. [ABSTRACT FROM AUTHOR]