Cite
Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress.
MLA
Chang Zeng, et al. “Investigation of Abrupt Degradation of Drain Current Caused by Under-Gate Crack in AlGaN/GaN High Electron Mobility Transistors during High Temperature Operation Stress.” Journal of Applied Physics, vol. 118, no. 12, Sept. 2015, pp. 124511-1-124511–15. EBSCOhost, https://doi.org/10.1063/1.4931891.
APA
Chang Zeng, XueYang Liao, RuGuan Li, YuanSheng Wang, Yiqiang Chen, Wei Su, Yuan Liu, Li Wei Wang, Ping Lai, Yun Huang, & YunFei En. (2015). Investigation of abrupt degradation of drain current caused by under-gate crack in AlGaN/GaN high electron mobility transistors during high temperature operation stress. Journal of Applied Physics, 118(12), 124511-1-124511–124515. https://doi.org/10.1063/1.4931891
Chicago
Chang Zeng, XueYang Liao, RuGuan Li, YuanSheng Wang, Yiqiang Chen, Wei Su, Yuan Liu, et al. 2015. “Investigation of Abrupt Degradation of Drain Current Caused by Under-Gate Crack in AlGaN/GaN High Electron Mobility Transistors during High Temperature Operation Stress.” Journal of Applied Physics 118 (12): 124511-1-124511–15. doi:10.1063/1.4931891.