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Total Dose Radiation Damage: A Simulation Framework.
- Source :
-
IEEE Transactions on Nuclear Science . 8/1/2015 Part 1, Vol. 62 Issue 4a, p1650-1657. 8p. - Publication Year :
- 2015
-
Abstract
- TCAD has been a useful tool for device design for decades. Radiation damage of devices requires accurate simulation of how charges move and are trapped, and the trap populations. This paper describes a simulation capability for these classes of problems and provides examples demonstrating its usefulness for investigation of device failure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 62
- Issue :
- 4a
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 108970827
- Full Text :
- https://doi.org/10.1109/TNS.2015.2425226