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Total Dose Radiation Damage: A Simulation Framework.

Authors :
Patrick, Erin
Rowsey, Nicole
Law, Mark E.
Source :
IEEE Transactions on Nuclear Science. 8/1/2015 Part 1, Vol. 62 Issue 4a, p1650-1657. 8p.
Publication Year :
2015

Abstract

TCAD has been a useful tool for device design for decades. Radiation damage of devices requires accurate simulation of how charges move and are trapped, and the trap populations. This paper describes a simulation capability for these classes of problems and provides examples demonstrating its usefulness for investigation of device failure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189499
Volume :
62
Issue :
4a
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
108970827
Full Text :
https://doi.org/10.1109/TNS.2015.2425226