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ATOMIC SCALE INVESTIGATION OF IMPURITY SEGREGATION TO CRYSTAL DEFECTS.
- Source :
-
Annual Review of Materials Research . 2003, Vol. 33 Issue 1, p215-231. 20p. - Publication Year :
- 2003
-
Abstract
- This paper presents a review of atomic-scale defects (planar defects and dislocations) analysis using atom probe (AP) and field ion microscopy (FIM). A large part of the discussion is dedicated to the first atomic-scale observation of a Cottrell atmosphere by a three-dimensional atom probe method (3DAP). The nanoscale boron segregation to line dislocations and planar defects in a B2-ordered FeAl (40 at.%A1) is imaged in three dimensions of the real space. The boron-enriched Cottrell atmosphere is imaged in the close vicinity of an edge {001} dislocation as a rod 3 nm in diameter, around to the dislocation line. [ABSTRACT FROM AUTHOR]
- Subjects :
- *MICROSCOPY
*FIELD ion microscopy
*BORON
*MATERIALS
*DISLOCATIONS in metals
Subjects
Details
- Language :
- English
- ISSN :
- 15317331
- Volume :
- 33
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Annual Review of Materials Research
- Publication Type :
- Academic Journal
- Accession number :
- 10878596
- Full Text :
- https://doi.org/10.1146/annurev.matsci.33.013102.095557