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ChemInform Abstract: Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-Type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).
- Source :
-
ChemInform . Aug2015, Vol. 46 Issue 33, pno-no. 1p. - Publication Year :
- 2015
-
Abstract
- Review: personal account of the background of the studies that led to the technologies for growing GaN and producing p-GaN; 61 refs. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON beams
*MAGNESIUM
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 09317597
- Volume :
- 46
- Issue :
- 33
- Database :
- Academic Search Index
- Journal :
- ChemInform
- Publication Type :
- Academic Journal
- Accession number :
- 108562103
- Full Text :
- https://doi.org/10.1002/chin.201533251