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Experimental demonstration of improved analog device performance of nanowire-TFETs.
- Source :
-
Solid-State Electronics . Nov2015, Vol. 113, p179-183. 5p. - Publication Year :
- 2015
-
Abstract
- We present experimental data on analog device performance of p-type planar- and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameters of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-currents up to 23 μA/μm at a gate overdrive of V gt = V d = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a good output current-saturation is observed leading to high intrinsic gain up to 217. The Tri-Gate nTFETs beat the fundamental MOSFET limit for the subthreshold slope of 60 mV/dec and by that also reach extremely high transconductance efficiencies up to 82 V −1 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 113
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 108432198
- Full Text :
- https://doi.org/10.1016/j.sse.2015.05.032