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Leakage current study and relevant defect localization in integrated circuit failure analysis.

Authors :
Wu, Chunlei
Yao, Suying
Corinne, Bergès
Source :
Microelectronics Reliability. Feb/Mar2015, Vol. 55 Issue 3/4, p463-469. 7p.
Publication Year :
2015

Abstract

The purpose of integrated circuit (IC) failure analysis (FA) is to find and to explain failure root cause and mechanism, which helps IC designer and manufacturer to improve design and process. Leakage current presence within circuit is the main failure root cause among the FA cases, although the leakage currents within different circuits can stimulate a variety of IC failure modes. It is significant to study the leakage currents within ICs and to localize relevant defects quickly and accurately by the combination of some complementary FA techniques. However, it is difficult to identify the original leakage current from the consequential leakage currents and to locate the relevant defect. In this paper, we explain the shape and location of a photon emission spot induced by an original leakage current is different from the one induced by a consequential leakage current. In a general case, and not only in this photon emission spot case, a method is elaborated to identify the original leakage current from the consequential leakage currents and to exactly locate the relevant defect by the combination of some complementary FA techniques. Some other functional failure cases will be studied to demonstrate adaptation and interest of this general method. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00262714
Volume :
55
Issue :
3/4
Database :
Academic Search Index
Journal :
Microelectronics Reliability
Publication Type :
Academic Journal
Accession number :
108325741
Full Text :
https://doi.org/10.1016/j.microrel.2015.01.005