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A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
- Source :
-
Materials Letters . Sep2003, Vol. 57 Issue 26/27, p4218. 4p. - Publication Year :
- 2003
-
Abstract
- We report the use of an interrupted growth method in metalorganic chemical vapor deposition (MOCVD) to control the growth of InGaN layers and to grow nanoscale InGaN self-assembled quantum dots (QDs). With a 12-s growth interrupt, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2×1010 cm−2. Strong photoluminescence (PL) emission of InGaN nanostructure was observed at a room temperature with a full-width-half-maximum (FWHM) of about 92 meV. These results suggest that such QDs are potentially useful in nitride-based optoelectronic devices. [Copyright &y& Elsevier]
- Subjects :
- *CHEMICAL vapor deposition
*PHOTOLUMINESCENCE
*OPTOELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 57
- Issue :
- 26/27
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 10504860
- Full Text :
- https://doi.org/10.1016/S0167-577X(03)00293-3