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Highly linear wide-swing continuous tuning of CMOS transconductors.

Authors :
Algueta, Jose M.
Lopez‐Martin, Antonio J.
Ramirez‐Angulo, Jaime
Carvajal, Ramon G.
Source :
International Journal of Circuit Theory & Applications. Aug2014, Vol. 42 Issue 8, p831-841. 11p.
Publication Year :
2014

Abstract

A technique to improve the input and output range of CMOS transconductors with resistive current division for continuous tuning is presented. Using it, a tunable transconductor is proposed which features high linearity over a wide input range and simplicity. Measurement results of the transconductor, fabricated in a 0.5 μm CMOS process, show an IM3 of -66 dB for a ±1.65V supply and two input tones centered at 1MHz of 1 Vpp each, and only 0.7 mW of power consumption. This represents an improvement of 13 dB versus the same transconductor using conventional current division. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00989886
Volume :
42
Issue :
8
Database :
Academic Search Index
Journal :
International Journal of Circuit Theory & Applications
Publication Type :
Academic Journal
Accession number :
103591857
Full Text :
https://doi.org/10.1002/cta.1891