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The role of gap states on energy level alignment at an α-NPD/HAT(CN)6 charge generation interface.
- Source :
-
Organic Electronics . Sep2015, Vol. 24, p120-124. 5p. - Publication Year :
- 2015
-
Abstract
- We report the effect of gap states on energy level alignment in a typical organic charge generation interface of N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl-4,4-diamine (α-NPD)/hexaazatriphenylene−hexacarbonitrile [HAT(CN) 6 ] by using ultraviolet and X-ray photoemission spectroscopy. The gap states tailed from the highest occupied molecular orbital (HOMO) onset of α-NPD dominate the Fermi level pinning at the α-NPD(<1.6 nm)/HAT(CN) 6 interface, which is favorable for charges generation upon bias operation and facilitates the electron injection from the HOMO-tail region of α-NPD to the lowest unoccupied molecular orbital (LUMO) region of HAT(CN) 6 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15661199
- Volume :
- 24
- Database :
- Academic Search Index
- Journal :
- Organic Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 103552943
- Full Text :
- https://doi.org/10.1016/j.orgel.2015.05.033