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Rashba effect of bismuth thin film on silicon studied by spin-resolved ARPES.
- Source :
-
Journal of Electron Spectroscopy & Related Phenomena . May2015, Vol. 201, p105-109. 5p. - Publication Year :
- 2015
-
Abstract
- We report high-resolution spin- and angle-resolved photoemission spectroscopy of bismuth thin film on Si(1 1 1) to discuss the spin structure of surface states. We found that, unlike conventional picture of the Rashba splitting, the magnitude of the in-plane spin polarization is asymmetric between two hole pockets across the Brillouin-zone center. In addition, these pockets exhibit a giant out-of-plane spin polarization as large as the in-plane counterpart, which changes the sign across the Γ ¯ M ¯ line. We also revealed that the spin polarization of the Rashba surface states near the Brillouin-zone boundary (the M ¯ point) is gradually reduced on decreasing the film thickness. Our result provides a new pathway to generate and control spin-polarized electrons in the Rashba system. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03682048
- Volume :
- 201
- Database :
- Academic Search Index
- Journal :
- Journal of Electron Spectroscopy & Related Phenomena
- Publication Type :
- Academic Journal
- Accession number :
- 102719814
- Full Text :
- https://doi.org/10.1016/j.elspec.2014.11.002