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Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . May2015, Vol. 212 Issue 5, p947-953. 7p. - Publication Year :
- 2015
-
Abstract
- In a combined experimental and numerical investigation, we present the effects of trap-assisted tunneling on the sub-threshold forward bias characteristics of a blue InGaN/GaN single-quantum-well LED test structure grown on a SiC substrate. The different role of donor- and acceptor-like traps has been studied, for the information it can provide on the role played by point defects. Using the energy Et and trap density Nt as the only tunneling-related fitting parameters, the behavior of the measured I( V) curves is well reproduced by our model over a wide current and temperature range. The very good agreement between simulations and experiments suggests that trap-assisted forward tunneling is one of the most relevant contributions to the current flow below the optical turn-on of the diode. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 212
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 102602506
- Full Text :
- https://doi.org/10.1002/pssa.201431743