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Electrical and optical properties of nitrogen doped SnO2 thin films deposited on flexible substrates by magnetron sputtering.
- Source :
-
Materials Research Bulletin . Aug2015, Vol. 68, p240-244. 5p. - Publication Year :
- 2015
-
Abstract
- Nitrogen-doped tin oxide (SnO 2 :N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO 2 :N films were amorphous state, and O/Sn ratios of SnO 2 :N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO 2 :N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO 2 :N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO 2 :N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10 −4 Ω cm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00255408
- Volume :
- 68
- Database :
- Academic Search Index
- Journal :
- Materials Research Bulletin
- Publication Type :
- Academic Journal
- Accession number :
- 102464310
- Full Text :
- https://doi.org/10.1016/j.materresbull.2015.03.072