Spin-dependent processes in heterostructures based on AB and AB semiconductors doped with transition metals.

In heterostructures based on AB and AB semiconductors doped with transition metals, viz., GaSb(59%)-MnSb(41%), GaAs/InGaAs/GaAs/GaAs:Mn, and ZnSe/ZnMgSSe/ZnSSe:Cr, we observe effects caused by the influence of charge carriers on magnetic properties and reverse effects consisting of a change in the electric and optical properties of the heterostructure caused by ferromagnetic ordering. Spin polarization of the charge carriers is the principal condition for establishing an interrelation of magnetic and other properties of magnetic semiconductor heterostructures. [ABSTRACT FROM AUTHOR]