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Effective g-factor tensor for carriers in IV-VI semiconductor quantum wells.

Authors :
Ridolfi, E.
de Andrada e Silva, E. A.
La Rocca, G. C.
Source :
Physical Review B: Condensed Matter & Materials Physics. Feb2015, Vol. 91 Issue 8, p085313-1-085313-6. 6p.
Publication Year :
2015

Abstract

A theory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for the QW electronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*QW) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10980121
Volume :
91
Issue :
8
Database :
Academic Search Index
Journal :
Physical Review B: Condensed Matter & Materials Physics
Publication Type :
Academic Journal
Accession number :
102211484
Full Text :
https://doi.org/10.1103/PhysRevB.91.085313