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Effective g-factor tensor for carriers in IV-VI semiconductor quantum wells.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Feb2015, Vol. 91 Issue 8, p085313-1-085313-6. 6p. - Publication Year :
- 2015
-
Abstract
- A theory for the electron (and hole) g factor in multivalley lead-salt IV-VI semiconductor quantum wells (QWs) is presented. An effective Hamiltonian for the QW electronic states in the presence of an external magnetic field is introduced within the envelope-function approximation, based on the multiband kp Dimmock model for the bulk. The mesoscopic spin-orbit (Rashba-type) and Zeeman interactions are taken into account on an equal footing and the effective g factor in symmetric quantum wells (g*QW) is calculated analytically for each nonequivalent conduction-band (and valence-band) valley, and for QWs grown along different crystallographic directions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 91
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 102211484
- Full Text :
- https://doi.org/10.1103/PhysRevB.91.085313