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The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies
- Source :
-
Journal of Non-Crystalline Solids . Jul2003, Vol. 322 Issue 1-3, p225. 8p. - Publication Year :
- 2003
-
Abstract
- Thin dielectric films (∼4.0 nm) of Ta2O5 were prepared by ion beam deposition technique onto Si(1 0 0) without and with a buffer layer of silicon nitride and oxynitride of about 1 nm. The composition of the films, submitted to annealing at 850 °C in nitrogen/oxygen atmosphere was studied by X-ray photoelectron spectroscopy. The thickness and roughness of layers were determined by a best squares fitting routine, based upon the algorithm of Parrat, of the X-ray reflectivity spectra. From capacitance as a function of voltage measurements we analyze the dielectric properties of these samples. We observed that after annealing the intermediate layer of silicon nitride or oxynitride confers to the samples a greater thermal stability in composition and thickness together with an improvement of the electrical properties especially for the sample deposited onto pure silicon nitride that has a dielectric constant of about 18 and an equivalent thickness of 1 nm. [Copyright &y& Elsevier]
- Subjects :
- *DIELECTRIC films
*ION bombardment
*SILICON nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00223093
- Volume :
- 322
- Issue :
- 1-3
- Database :
- Academic Search Index
- Journal :
- Journal of Non-Crystalline Solids
- Publication Type :
- Academic Journal
- Accession number :
- 10220131
- Full Text :
- https://doi.org/10.1016/S0022-3093(03)00206-0