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Controlling the Metal to Semiconductor Transition of MoS2 and WS2 in Solution.

Authors :
Chou, Stanley S.
Yi-Kai Huang
Jaemyung Kim
Kaehr, Bryan
Foley, Brian M.
Ping Lu
Dykstra, Conner
Hopkins, Patrick E.
Brinker, C. Jeffrey
Jiaxing Huang
Dravid, Vinayak P.
Source :
Journal of the American Chemical Society. 2/11/2015, Vol. 137 Issue 5, p1742-1745. 4p.
Publication Year :
2015

Abstract

Lithiation-exfoliation produces single to few-layered MoS2 and WS2 sheets dispersible in water. However, the process transforms them from the pristine semiconducting 2H phase to a distorted metallic phase. Recovery of the semiconducting properties typically involves heating of the chemically exfoliated sheets at elevated temperatures. Therefore, it has been largely limited to sheets deposited on solid substrates. Here, we report the dispersion of chemically exfoliated MoS2 sheets in high boiling point organic solvents enabled by surface functionalization and the controllable recovery of their semiconducting properties directly in solution. This process connects the scalability of chemical exfoliation with the simplicity of solution processing, ultimately enabling a facile method for tuning the metal to semiconductor transitions of MoS2 and WS2 within a liquid medium. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00027863
Volume :
137
Issue :
5
Database :
Academic Search Index
Journal :
Journal of the American Chemical Society
Publication Type :
Academic Journal
Accession number :
101328771
Full Text :
https://doi.org/10.1021/ja5107145