Growth of Nd doped (Lu, Gd)3(Ga, Al)5O12 single crystal by the micro pulling down method and their scintillation properties.

Nd 1 mol% doped (Lu, Gd) 3 (Ga, Al) 5 O 12 (LGGAG) single crystals were grown by the micro-pulling down (μ-PD) method. Luminescence and scintillation properties such as absorption, excitation and emission spectra, light yield and decay time were evaluated. Nd1%:Lu 3 Al 5 O 12 showed the highest light output of around 8200 photons/MeV among the grown crystals. Scintillation decay time of Nd:Y 3 Al 5 O 12 was 1.32 μs (36%) 2.02 μs (64%). Nd:Lu 3 Ga 3 Al 2 O 12 was relatively high dense scintillator of 7.38 g/cm 3 with good light yield of 6800 photons/MeV and scintillation decay time of 0.20 μs (5%) 2.60 μs (95%). [ABSTRACT FROM AUTHOR]