Performances Enhancement of H-Doped ZnO Nanorods by H2/Ar Plasma Treatment.

The thermal stability of H dopants in ZnO nanorod (NR) array is demonstrated to be greatly enhanced by a H2/Ar mixed plasma treatment compared to a H2 plasma treatment and hence their optoelectronic properties. For all the as-treated samples with the plasma containing H2 plasma, ultraviolet emission and electrical conductivity are enhanced as well as sensitivity and photoresponsivity of UV sensing. Notably, only the H2/Ar-treated samples show high thermal stability of H dopants and enhanced optoelectronic properties after annealing at 300 °C for 1 h, which is attributed to the assistance of Ar plasma. [ABSTRACT FROM AUTHOR]