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Ex post manipulation of barriers in InGaAs tunnel injection devices.
- Source :
-
Applied Physics Letters . 1/5/2015, Vol. 106 Issue 1, p1-5. 5p. 3 Graphs. - Publication Year :
- 2015
-
Abstract
- Ex post manipulation of ~1.1µm emitting InGaAs/GaAs-based quantum dot-quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 106
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 100416881
- Full Text :
- https://doi.org/10.1063/1.4905467