Spin Hall magnetoimpedance.

The recently discovered spin Hall magnetoresistance effect electrically probes pure spin current flow across a ferrimagnetic insulator/normal metal bilayer interface. While usually the dc electrical resistance of the bilayer is measured as a function of the magnetization orientation in the magnetic insulator, here we present magnetoimpedance measurements using bias currents with frequencies up to several GHz. We find that the spin Hall magnetoresistance effect is frequency independent up tofrequencies of 3 GHz, corroborating the assumption of a frequency-independent spin Hall angle. Our data therefore show that all interaction time constants relevant for the spin Hall magnetoresistance effect are shorter than about 50 ps. Therefore this technique should allow for the fast readout of the magnetization direction in magnetic insulator/normal metal bilayers. [ABSTRACT FROM AUTHOR]