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Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method.
- Source :
-
Applied Surface Science . Jan2015, Vol. 325, p258-261. 4p. - Publication Year :
- 2015
-
Abstract
- The β-Ga 2 O 3 films were grown on GaAs (1 0 0) substrates by metal-organic chemical vapor deposition method. The influences of growth pressure on the surface morphology, crystal quality and electrical properties of β-Ga 2 O 3 films were investigated using FE-SEM, XRD and leakage current measurements. It was found that the growth pressure could obviously influence the preferred orientation and growth rate of the β-Ga 2 O 3 films prepared from 2000 Pa to 10,000 Pa. At the growth pressure of 5000 Pa, we obtained β-Ga 2 O 3 film with relatively high resistance. According to the XRD phi-scan results, the in-plane epitaxial relationship could be confirmed as β-Ga 2 O 3 [0 1 0]||GaAs 〈0 1 1〉 and β-Ga 2 O 3 [0 0 1]||GaAs 〈0 1 1〉. In addition, the effect of growth pressure on the parasitic gas-phase reaction was studied to explain the changes of growth rate. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 325
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 100234030
- Full Text :
- https://doi.org/10.1016/j.apsusc.2014.11.074