Stopping potential and ion beamlet control for micro-resistive patterning through sub-Debye length plasma apertures.

Focused multiple ion beamlets from a microwave plasma source is investigated for localized micron-scale modification of substrates in a patterned manner. Plasma electrodes (PE) with an array of through apertures having aperture diameters of the order of plasma Debye length are investigated for generating the beamlets. Extraction through sub-Debye length apertures becomes possible when the PE is kept at floating potential. It is found that the current - voltage characteristics of the extracted beamlets exhibits interesting features such as a space-charge-limited region that has a different behaviour than the conventional Child-Langmuir's law and an extraction-voltage-limited region that does not undergo saturation but exhibits a Schottky-like behaviour similar to that of a vacuum diode. A switching technique to control the motion of individual beamlets is developed and the stopping potential determined. The beamlets are thereafter used to create localized micro-resistive patterns. The experimental results are compared with simulations and reasonably good agreement is obtained. [ABSTRACT FROM AUTHOR]