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V ions implanted ZnO nanorod arrays for photoelectrochemical water splitting under visible light.
- Source :
-
International Journal of Hydrogen Energy . Jan2015, Vol. 40 Issue 3, p1394-1401. 8p. - Publication Year :
- 2015
-
Abstract
- In this work, V ions were doped into ZnO nanorod arrays via an advanced ion implantation method for photoelectrochemical water splitting under visible light. It was indicated that the V dopants were incorporated into ZnO lattice as V 4+ and V 5+ ions. V ion doping expanded the optical absorption of ZnO nanorod arrays into visible light region and led to considerable photoelectrochemical performance under visible light illumination ( λ > 420 nm). The photocurrent density of V ions doped ZnO nanorod arrays could achieve 10.5 μA/cm 2 at 0.8 V (vs. Ag/AgCl), which was about 4 times higher than that of the pure ZnO nanorod arrays. The enhancement in photoelectrochemical performances for V ions doped ZnO nanorod arrays should be attributed to the improved visible light absorption ability and the increased charge carrier density induced by V ion doping. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03603199
- Volume :
- 40
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- International Journal of Hydrogen Energy
- Publication Type :
- Academic Journal
- Accession number :
- 100156711
- Full Text :
- https://doi.org/10.1016/j.ijhydene.2014.11.114