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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2014 Part 1, Vol. 61 Issue 6, p2959-2964. 6p. - Publication Year :
- 2014
-
Abstract
- <?Pub Dtl?>AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency f_T, and maximum oscillation frequency fmax than DC transconductance. These result from radiation-induced increases in fast bulk and surface trap densities, as well as increasing impedance mismatch at high frequencies with increasing proton fluence. NH3-rich MBE devices show less degradation in DC transconductance, but more degradation in RF gain than Ga-rich devices. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 61
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 100077145
- Full Text :
- https://doi.org/10.1109/TNS.2014.2362872