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Bias Dependence of Total Ionizing Dose Effects in SiGe-SiO_2/HfO_2\ pMOS FinFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2014 Part 1, Vol. 61 Issue 6, p2834-2838. 5p. - Publication Year :
- 2014
-
Abstract
- The total ionizing dose (TID) response of double-gate SiGe-SiO_2/HfO_2 \ pMOS FinFET devices is investigated under different device bias conditions. Negative bias irradiation leads to the worst-case degradation due to increased hole trapping in the HfO_2 layer, in contrast to what is typically observed for devices with SiO_2 or HfO_2 gate dielectrics. This occurs in the devices because radiation-induced holes that are generated in the SiO_2 interfacial layer can transport and become trapped in the HfO_2 under negative bias, leading to a more negative threshold voltage shift than observed at 0 V bias. Similarly, radiation-induced electrons that are generated in the SiO_2 interfacial layer can transport into the HfO_2 and become trapped under positive bias, leading to a more positive threshold voltage shift than observed at 0 V bias. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 61
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 100077139
- Full Text :
- https://doi.org/10.1109/TNS.2014.2362918