11,070 results on '"*FERROELECTRIC materials"'
Search Results
2. Unleashing the power of giant negative electrocaloric effect through heterojunctions
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Ma, Ziyue, Han, Feifei, Wang, Hao, Wang, Yichi, Liu, Laijun, Chen, Xue, Dong, Wen, Li, Yang, Bai, Yisong, Wang, Dingyuan, Zheng, Limei, Zhang, Qi, and Peng, Biaolin
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- 2025
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3. Ferroelectric memristor and its neuromorphic computing applications
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Du, Junmei, Sun, Bai, Yang, Chuan, Cao, Zelin, Zhou, Guangdong, Wang, Hongyan, and Chen, Yuanzheng
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- 2025
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4. Efficient photocatalytic degradation of pollutants by piezoelectric effect in the flower sphere BiTi5NbO14/BiOCl heterojunction
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Yin, Zhanming, Liu, Tong, Zheng, Zhanshen, Li, Yuanliang, and Duan, Jixiang
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- 2025
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5. Antiferroelectric domain modulation enhancing energy storage performance by phase-field simulations
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Xu, Ke, Tang, Shiyu, Guo, Changqing, Song, Yu, and Huang, Houbing
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- 2025
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6. Sliding ferroelectricity in two-dimensional materials and device applications
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Sun, Xiaoyao, Xia, Qian, Cao, Tengfei, and Yuan, Shuoguo
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- 2025
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7. Origin of superior energy storage performance in antiferroelectric relaxors
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Ge, Pingji, Tian, Ben, Hong, Zhengkai, Liu, Mengyao, Yang, Sen, and Ke, Xiaoqin
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- 2025
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8. Advancements in artificial synapses: The role of fluorite–structured ferroelectrics
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Reddy, P.R. Sekhar
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- 2025
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9. Enhanced ultra-high efficiency in high-energy–density PbHfO3-based antiferroelectric ceramics through synergistic effect design
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Zhou, Jian, Liu, Deke, Chen, Ruoxin, Zhang, Kai, Jin, Ruoqi, Sun, Hongchen, Feng, Yujun, Wei, Xiaoyong, Xu, Zhuo, and Xu, Ran
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- 2024
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10. Modulation of flux-closure polar state for enhanced storage unit and thermal conductivity via dual-probe excitation.
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Luo, S. S., Hu, S. W., Shan, D. L., Liu, Y. Y., Lei, C. H., and Pan, K.
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NANOFILMS , *PIEZORESPONSE force microscopy , *FERROELECTRIC devices , *FERROELECTRIC materials , *FERROELECTRICITY - Abstract
Ferroelectric topological structures have broad application prospects for high-density information storage for long-term data retention via topological protection. However, the high-density memory component might generate tremendous power consumption, causing the failure of ferroelectric devices due to the severe thermal effect. There remains an emergent issue on the synchronous achievement of high-density data storage with the decreasing influences of the thermal effects in ferroelectric topological domain structures. Here, we introduce dual-probe excitation to control the symmetry of the electric field and integrate the phase field simulation for modulating the flux-closure ferroelectric domain configuration to simultaneously improve the memory storage unit and thermal conductivity at the nanoscale in PbTiO3 thin film under a piezoresponse force microscopy experiment. It is found that the grown flux-closure polar state in both in-plane directions encourages us to enhance the storage density during dual-probe excitation in topological ferroelectric memory devices. Moreover, the increased number of flux-closure polar states and the decreased density of the domain walls can be obtained by using dual-probe excitation. Finally, we figured out that both the double-staircase-like and paddle-like domain configurations exhibit large storage units and effective thermal conductivity simultaneously under dual-probe excitation. Our study gives a guideline to synchronously improve storage performance and thermal conductivity through multiple-probe excitations in topological ferroelectric materials and devices. [ABSTRACT FROM AUTHOR]
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- 2025
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11. Collective behavior in intrinsic polarization switching of PbTiO3 and Pb(Zr,Ti)O3.
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Park, Suehyun, Kim, Raseong, and Young, Ian A.
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POLARIZATION (Electricity) , *FERROELECTRIC materials , *COLLECTIVE behavior , *ELECTRIC fields , *MOLECULAR dynamics - Abstract
Ferroelectric materials play a pivotal role in various industrial and scientific applications due to their ability to exhibit spontaneous electric polarization above a critical temperature. The application of a sufficiently high external electric field can induce the switching of the spontaneous polarization, with the specific mechanism varying across different materials. Understanding the intrinsic switching mechanism is paramount for regulating polarization domains, thereby unlocking potential applications in nanoelectronic devices. Different types of switching mechanisms have been experimentally reported and various models have been developed, among them the nucleation-limited-switching (NLS) model, which is distinguished by nucleation and limited propagation. We investigate the intrinsic polarization switching mechanisms in PbTiO 3 and Pb(Zr,Ti)O 3 using molecular dynamics simulations. We found that both PbTiO 3 and Pb(Zr,Ti)O 3 exhibit the change of switching mechanisms as the field increases. At high electric field, they both follow homogeneous switching mechanism without the nucleation of domains. At weak electric fields, the NLS model effectively described the switching behavior of both PbTiO 3 and Pb(Zr,Ti)O 3 , although the atomistic details of their respective switching mechanisms diverge. We demonstrate that, for PbTiO 3 , the switching mechanism at weak fields involves the collective behavior near nuclei such as the formation of vortices, which is characterized by the hypertoroidal moment. We also report the substantial in-plane dipolar pattern of Pb(Zr,Ti)O 3 at low fields, independent of switching. This work contributes to a comprehensive understanding of ferroelectric switching and, thus, results in better prediction of designing new nanoelectronic devices. [ABSTRACT FROM AUTHOR]
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- 2024
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12. Collective behavior in intrinsic polarization switching of PbTiO3 and Pb(Zr,Ti)O3.
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Park, Suehyun, Kim, Raseong, and Young, Ian A.
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POLARIZATION (Electricity) ,FERROELECTRIC materials ,COLLECTIVE behavior ,ELECTRIC fields ,MOLECULAR dynamics - Abstract
Ferroelectric materials play a pivotal role in various industrial and scientific applications due to their ability to exhibit spontaneous electric polarization above a critical temperature. The application of a sufficiently high external electric field can induce the switching of the spontaneous polarization, with the specific mechanism varying across different materials. Understanding the intrinsic switching mechanism is paramount for regulating polarization domains, thereby unlocking potential applications in nanoelectronic devices. Different types of switching mechanisms have been experimentally reported and various models have been developed, among them the nucleation-limited-switching (NLS) model, which is distinguished by nucleation and limited propagation. We investigate the intrinsic polarization switching mechanisms in PbTiO 3 and Pb(Zr,Ti)O 3 using molecular dynamics simulations. We found that both PbTiO 3 and Pb(Zr,Ti)O 3 exhibit the change of switching mechanisms as the field increases. At high electric field, they both follow homogeneous switching mechanism without the nucleation of domains. At weak electric fields, the NLS model effectively described the switching behavior of both PbTiO 3 and Pb(Zr,Ti)O 3 , although the atomistic details of their respective switching mechanisms diverge. We demonstrate that, for PbTiO 3 , the switching mechanism at weak fields involves the collective behavior near nuclei such as the formation of vortices, which is characterized by the hypertoroidal moment. We also report the substantial in-plane dipolar pattern of Pb(Zr,Ti)O 3 at low fields, independent of switching. This work contributes to a comprehensive understanding of ferroelectric switching and, thus, results in better prediction of designing new nanoelectronic devices. [ABSTRACT FROM AUTHOR]
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- 2024
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13. Structural, dielectric, impedance, and ferroelectric studies of LiNbO3-doped K0.5Na0.5NbO3 ceramics.
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Kumar, Raju and Singh, Satyendra
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FERROELECTRIC materials , *PERMITTIVITY , *DIELECTRIC materials , *FERROELECTRIC crystals , *ACTIVATION energy , *FERROELECTRIC ceramics - Abstract
Currently, sophisticated advanced electronics require ferroelectric materials with high dielectric response. Lead-free (1 − x)K 0.5 Na 0.5 NbO 3 -xLiNbO 3 (KNN-xLiN) ceramics with x = 0.01, 0.03, and 0.05 were produced using a solid-state method, resulting in a greater dielectric constant, a lower impedance, and an increased conductivity. Compared to conventional ferroelectrics, KNN-0.01LiN ceramics have a greater activation energy (E r e l ) of 1.33 eV and a large σ a c value of 10 − 3 − 10 − 2 S/m in the frequency range of 20 Hz–1 MHz. The peak that corresponds to the orthogonal–tetragonal (T O − T ) phase shifts toward the lower temperature side and the peak that corresponds to T T − C shifts toward the higher temperature side as dopant percentage increases in the KNN-xLiN ceramics. The observed data may provide light on a key member of the team involved in the creation of upgraded ferroelectrics with improved performance. This result sheds light on the process underlying the improved characteristics of K 0.5 Na 0.5 NbO 3 -based ceramics and may lead to the development of high performance ferroelectrics that will benefit a variety of functional materials. [ABSTRACT FROM AUTHOR]
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- 2024
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14. Phase transition mechanism and property prediction of hafnium oxide-based antiferroelectric materials revealed by artificial intelligence
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Yan, Shaoan, Xu, Pei, Li, Gang, Zhu, Yingfang, Wu, Yujie, Chen, Qilai, Liu, Sen, Li, Qingjiang, and Tang, Minghua
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- 2025
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15. Quantification of switchable thermal conductivity of ferroelectric materials through second-principles calculation
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Zhang, Jingtong, Bin, Chengwen, Zhao, Yunhong, Zhang, Huazhang, Sun, Sheng, Han, Peng, Liu, Chang, Xu, Tao, Tang, Gang, Zhang, Tong-Yi, and Wang, Jie
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- 2024
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16. Interplay of c- and a-domains on the anomalous electrocaloric effect in BaTiO3 (001) single crystals.
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Chatterjee, Subhashree, Yadav, Kusampal, Barman, Shubhankar, Hasina, Dilruba, and Mukherjee, Devajyoti
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PYROELECTRICITY , *ADIABATIC temperature , *SINGLE crystals , *FERROELECTRIC materials , *ELECTRIC fields - Abstract
Electrocaloric effects of adiabatic temperature change via the application of external electric fields are explored for energy-efficient solid-state refrigeration. These effects are typically estimated from the thermodynamic analyses of polarization and field in electrocaloric materials, which implies that higher field application gives larger temperature changes. However, this may not be always true. Here, using both indirect and direct methods, we report an anomalous effect where larger thermal changes occur by applications of lower fields in a multi-domain BaTiO3 (001) single crystal. A large temperature change of 1.9 K under a low field change of 8 kV/cm at 404 K is observed in a multi-domain BaTiO3 (001) single crystal in comparison to that of 1.4 K at a high field change of 30 kV/cm. We attribute this counterintuitive effect to the interplay of the c- and a-domains in the BaTiO3 (001) single crystal under the influence of temperature and field changes. This work provides a fundamental understanding of the complex role of domains in governing the electrocaloric response of ferroelectric materials which is often overlooked but critical for their practical applications. [ABSTRACT FROM AUTHOR]
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- 2024
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17. Contribution of piezoelectric effect on piezo-phototronic coupling in ferroelectrics: A theory assisted experimental approach on NBT.
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Samantaray, Koyal Suman, Kumar, Sourabh, P, Maneesha, Sasmal, Dilip, Baral, Suresh Chandra, Krupa, B. R. Vaishnavi, Dasgupta, Arup, Mekki, A., Harrabi, K., and Sen, Somaditya
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PIEZOELECTRICITY , *FERROELECTRIC materials , *BISMUTH titanate , *ELASTIC modulus , *FERROELECTRIC crystals - Abstract
A new study explores the distinct roles of spontaneous polarization and piezoelectric polarization in piezo-phototronic coupling. This investigation focuses on differences in photocatalytic and piezo-photocatalytic performance using sodium bismuth titanate, a key ferroelectric material. The research aims to identify which type of polarization has a greater influence on piezo-phototronic effects. A theoretical assessment complements the experimental findings, providing additional insights. This study explores the enhanced piezo-phototronic performance of electrospun nanofibers compared to sol-gel particles under different illumination conditions (11 W UV, 250 W UV, and natural sunlight). Electrospun nanofibers exhibited a rate constant (k) improvement of 2.5 to 3.75 times, whereas sol-gel particles showed only 1.3 to 1.4 times higher performance when ultrasonication was added to photocatalysis. Analysis using first-principle methods revealed that nanofibers had an elastic modulus (C33) about 2.15 times lower than sol-gel particles, indicating greater flexibility. The elongation of the lattice along the z axis in the case of nanofibers reduced the covalency in the Bi–O and Ti–O bonds. These structural differences reduced spontaneous polarization and piezoelectric stress coefficients (e31 and e33). Despite having lower piezoelectric stress coefficients, higher flexibility in nanofibers led to a higher piezoelectric strain coefficient, 2.66 and 1.97 times greater than sol-gel particles, respectively. This improved the piezo-phototronic coupling for nanofibers. [ABSTRACT FROM AUTHOR]
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- 2024
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18. Harnessing room-temperature ferroelectricity in metal oxide monolayers for advanced logic devices.
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Naseer, Ateeb, Rafiq, Musaib, Bhowmick, Somnath, Agarwal, Amit, and Singh Chauhan, Yogesh
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FERROELECTRIC materials , *FIELD-effect transistors , *VALENCE bands , *LOGIC devices , *FERROELECTRICITY - Abstract
Two-dimensional ferroelectric materials are beneficial for power-efficient memory devices and transistor applications. Here, we predict out-of-plane ferroelectricity in a new family of buckled metal oxide (MO; M: Ge, Sn, Pb) monolayers with significant spontaneous polarization. Additionally, these monolayers have a narrow valence band, which is energetically separated from the rest of the low-lying valence bands. Such a unique band structure limits the long thermal tail of the hot carriers, mitigating subthreshold thermionic leakage and allowing field-effect transistors (FETs) to function beyond the bounds imposed on conventional FETs by thermodynamics. Our quantum transport simulations reveal that the FETs based on these MO monolayers exhibit a large ON/OFF ratio with an average subthreshold swing of less than 60 mV/decade at room temperature, even for short gate lengths. Our work motivates further exploration of the MO monolayers for developing advanced, high-performance memory and logic devices. [ABSTRACT FROM AUTHOR]
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- 2024
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19. Probing ferroelectric phase transitions in barium titanate single crystals via in situ second harmonic generation microscopy.
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Kirbus, Benjamin, Seddon, Samuel D., Kiseleva, Iuliia, Beyreuther, Elke, Rüsing, Michael, and Eng, Lukas M.
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PHASE transitions , *SECOND harmonic generation , *FERROELECTRIC materials , *BARIUM titanate , *FERROELECTRIC transitions - Abstract
Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO 3 ; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay of such FE domains, the domain walls (DWs), and their macroscopic properties, owed to BTO's multiple and experimentally accessible phase transitions. Here, we employ Second Harmonic Generation Microscopy (SHGM) to in situ investigate the cubic-to-tetragonal (at ∼ 126 ° C) and the tetragonal-to-orthorhombic (at ∼ 5 ° C) phase transition in single-crystalline BTO via three-dimensional (3D) DW mapping. We demonstrate that SHGM imaging provides the direct visualization of FE domain switching as well as the domain dynamics in 3D, shedding light on the interplay of the domain structure and phase transition. These results allow us to extract the different transition temperatures locally, to unveil the hysteresis behavior, and to determine the type of phase transition at play (first/second order) from the recorded SHGM data. The capabilities of SHGM in uncovering these crucial phenomena can easily be applied to other ferroelectrics to provide new possibilities for in situ engineering of advanced ferroic devices. [ABSTRACT FROM AUTHOR]
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- 2024
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20. Growth and ferroelectric properties of Al substituted BiFeO3 epitaxial thin films.
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Joshi, Chhatra R., Acharya, Mahendra, Mankey, Gary J., and Gupta, Arunava
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PIEZORESPONSE force microscopy , *PULSED laser deposition , *FERROELECTRIC materials , *THIN films , *MAGNETIC properties , *HYSTERESIS loop - Abstract
Epitaxial films of BiAl x Fe 1 − x O 3 (xBAFO) were grown on SrTiO 3 (STO) and SrRuO 3 buffered STO substrates using pulsed laser deposition. To understand the effects of Al substitution at the Fe-site of BFO, we systematically investigated its impact on the material's crystal structure, surface morphology, ferroelectric properties, and magnetic properties. Our x-ray diffraction analysis revealed that phase-pure xBAFO films can be stabilized for Al concentrations between 0% and 35%, without the formation of secondary phases, due to the isotypic crystal structures of BiAlO 3 and BiFeO 3. This allowed the rhombohedral structure of BAFO to be preserved. We then characterized the ferroelectric properties of xBAFO (0 ≤ x ≤ 0.25) by analyzing polarization-voltage hysteresis loops, which exhibited a transition from a nearly square shape to a more slanted shape with increasing Al substitution. Additionally, piezoresponse force microscopy revealed that the domain growth mode, shape, size, dimension, and nucleation play a crucial role in the switching behavior of ferroelectric materials. Furthermore, we observed a modest enhancement in magnetization due to the modified spin ordering of Fe atoms with Al substitution. Notably, the optimal ferroelectric and magnetic properties were achieved at an Al concentration of 15%. These findings suggest that BAFO is a promising magnetoelectric material with desired functionalities for realizing BFO-based next-generation non-volatile memory devices. [ABSTRACT FROM AUTHOR]
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- 2024
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21. Giant tunneling resistance and robust switching behavior in ferroelectric tunnel junctions of WS2/Ga2O3 heterostructures: The influence of metal–semiconductor contacts.
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Wei, Dong, Guo, Gaofu, Yu, Heng, Li, Yi, Ma, Yaqiang, Tang, Yanan, Feng, Zhen, and Dai, Xianqi
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GREEN'S functions , *FERROELECTRIC materials , *ELECTRON tunneling , *POTENTIAL barrier , *DENSITY functional theory , *TUNNEL junctions (Materials science) - Abstract
The ferroelectric tunneling junctions (FTJs) are widely recognized as one of the non-volatile memories with significant potential. Ferroelectricity usually fades away as materials are thinned down below a critical value, and this problem is particularly acute in the case of shrinking device sizes, thus attracting attention to two-dimensional ferroelectric materials (2DFEMs). In this work, we designed 2D ferroelectric Ga2O3-based FTJs with out-of-plane polarization, and the influence of metal–semiconductor contact in the electrode region on the system is considered. Here, using density functional theory combined with the non-equilibrium Green's function approach to quantum transport calculations, we demonstrate robust ferroelectric polarization-controlled switching behavior between metallic and semiconducting states in Ga2O3/WS2 ferroelectric heterostructures. The potential barrier of the metal–semiconductor contact in the electrode region is lower than that of the intrinsic material, thereby resulting in an increased probability of electron tunneling. Our results reveal the crucial role of 2DFEMs in the construction of FTJs and highlight the significant impact of electrode contact types on performance. This provides a promising approach for developing high-density ferroelectric memories based on 2D ferroelectric semiconductor heterostructures. [ABSTRACT FROM AUTHOR]
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- 2024
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22. Ferroelectric proximity effects in two-dimensional FeSeTe.
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Disiena, Matthew N., Pandey, Nilesh, Luth, Christopher, Sloan, Luke, Shattuck, Reid, Singh, Jatin V., and Banerjee, Sanjay K.
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FERROELECTRICITY , *FERROELECTRIC materials , *SUPERCONDUCTING transitions , *PERMITTIVITY , *HYSTERESIS loop - Abstract
Recent studies have shown that proximity effects are able to substantially modulate the superconducting properties of various quasi-two-dimensional layered materials such as FeSe, FeSeTe, NbSe2, and NbS2. Due to their high surface charge concentration and high dielectric constants, ferroelectric materials provide an interesting avenue for inducing proximity effects in layered superconductors. In this study, we explore the interactions between FeSeTe and the two-dimensional ferroelectrics CuInP2S6 and CuInP2Se6. We found that contrary to the normal behavior of FeSeTe, FeSeTe/CuInP2S6, and FeSeTe/CuInP2Se6 heterostructures display a peculiar two-step superconducting transition. Further testing revealed a hysteresis loop in the IV curves of these samples when measured below the critical temperature indicating the presence of disorder and domains within FeSeTe. We conclude that these domains are responsible for the two-step transition in FeSeTe and hypothesize that they are induced by the domain structure of the aforementioned ferroelectric materials. [ABSTRACT FROM AUTHOR]
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- 2024
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23. Hybrid mechanism of electrical breakdown in ferroelectric materials under high-pressure shock loading.
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Shkuratov, Sergey I., Baird, Jason, Antipov, Vladimir G., Chase, Jay B., and Lynch, Christopher S.
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FERROELECTRIC materials , *ELECTRON emission , *FERROELECTRIC thin films , *SINGLE crystals , *ELECTRIC breakdown , *FERROELECTRIC crystals , *FERROELECTRIC ceramics , *HIGH voltages - Abstract
The unique ability of ferroelectrics to generate high voltage under shock loading is limited by electrical breakdown within the shock-compressed ferroelectric material. Breakdown is a hybrid process of initiation and growth. The possible mechanisms of electrical breakdown in ferroelectric films and bulk ceramics subjected to high-pressure shock loading are discussed and experiments designed to elucidate which mechanisms govern breakdown. Gigapascal shock loading experiments were performed on poled Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ferroelectric film specimens in the range of 32–156 μm thickness to determine the dependence of the breakdown field on thickness and on film specimens in the range of 4–16 mm length to determine the dependence of the breakdown field on the duration of shock compression. The resulting breakdown-field vs thickness and breakdown-field vs shock transit time dependencies are consistent with a hybrid electron emission initiation and Joule heating microchannel growth mechanism. Further analysis of data previously obtained on shock-compressed 0.27Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 ferrvoelectric single crystals and Pb(Zr0.65Ti0.35)O3, Pb0.99(Zr0.52Ti0.48)0.99Nb0.01O3, Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 bulk ceramics is consistent with this dual mechanism. It appears that neither chemical composition nor microstructure (single crystal vs polycrystalline) of the ferroelectric material has a significant effect on the breakdown mechanism in shocked ferroelectrics. [ABSTRACT FROM AUTHOR]
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- 2024
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24. Influence of oxygen pressure on the ferroelectricity of pulsed laser deposition fabricated epitaxial Y-doped HfO2.
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Huang, Jia-hao, Yang, Lei, Wei, Lu-qi, Wang, Tao, Fan, Wen-cheng, Qu, Ke, Guan, Zhao, Chen, Bin-bin, Xiang, Ping-hua, Duan, Chun-gang, and Zhong, Ni
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PULSED laser deposition , *ATOMIC layer deposition , *FERROELECTRICITY , *FERROELECTRIC materials , *SPUTTER deposition , *PULSED lasers - Abstract
Ferroelectric properties of hafnium-based thin films have gained significant interest, yet the fundamental mechanisms responsible for the emergence of the ferroelectric phase continue to be inadequately investigated. In contrast with polycrystalline films fabricated by atomic layer deposition or sputter methods, which possess uncertainty in polarization orientation, epitaxial ferroelectric HfO2-based materials are less investigated, especially for factors such as electric field and oxygen vacancy, which are proposed and examined for their potential impacts on phase stability. In this study, Y-doped hafnium oxide (HYO) ferroelectric epitaxial films were fabricated using pulsed laser deposition, with variations in oxygen pressure during the deposition process. Structural and electrical analyses of HYO epitaxial ferroelectric films prepared under differing oxygen pressures revealed a correlation between the ferroelectric properties of the films and the oxygen content. An optimal selection of oxygen pressure was found to be conducive to the formation of HYO epitaxial ferroelectric films, presenting a promising avenue for future ferroelectric memory applications. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
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25. Influence of oxygen pressure on the ferroelectricity of pulsed laser deposition fabricated epitaxial Y-doped HfO2.
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Huang, Jia-hao, Yang, Lei, Wei, Lu-qi, Wang, Tao, Fan, Wen-cheng, Qu, Ke, Guan, Zhao, Chen, Bin-bin, Xiang, Ping-hua, Duan, Chun-gang, and Zhong, Ni
- Subjects
PULSED laser deposition ,ATOMIC layer deposition ,FERROELECTRICITY ,FERROELECTRIC materials ,SPUTTER deposition ,PULSED lasers - Abstract
Ferroelectric properties of hafnium-based thin films have gained significant interest, yet the fundamental mechanisms responsible for the emergence of the ferroelectric phase continue to be inadequately investigated. In contrast with polycrystalline films fabricated by atomic layer deposition or sputter methods, which possess uncertainty in polarization orientation, epitaxial ferroelectric HfO
2 -based materials are less investigated, especially for factors such as electric field and oxygen vacancy, which are proposed and examined for their potential impacts on phase stability. In this study, Y-doped hafnium oxide (HYO) ferroelectric epitaxial films were fabricated using pulsed laser deposition, with variations in oxygen pressure during the deposition process. Structural and electrical analyses of HYO epitaxial ferroelectric films prepared under differing oxygen pressures revealed a correlation between the ferroelectric properties of the films and the oxygen content. An optimal selection of oxygen pressure was found to be conducive to the formation of HYO epitaxial ferroelectric films, presenting a promising avenue for future ferroelectric memory applications. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF
26. Performance improvement of HfO2-based ferroelectric with 3D cylindrical capacitor stress optimization.
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Li, Wenqi, Xia, Zhiliang, Fan, Dongyu, Fang, Yuxuan, and Huo, Zongliang
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AXIAL stresses , *FERROELECTRIC materials , *STRESS concentration , *CAPACITORS , *FERROELECTRIC devices , *TUNGSTEN bronze - Abstract
To meet commercialization requirements, the distributions of materials in hafnium-based ferroelectric devices—including their phase and orientation—need to be controlled. This article presents a method for improving the ferroelectric phase ratio and orientation by adjusting the stress distribution of the annealing structure in a three-dimensional capacitor. In such a structure, stress can be applied in three directions: tangential, axial, and radial; there are, thus, more ways to regulate stress in three-dimensional structures than in two-dimensional structures. This work sought to clarify the role of the stress direction on the proportions and orientations of ferroelectric phases. The results of stress simulations show that a structure with an internal TiN electrode, but no filling provides greater axial and tangential stresses in the hafnium-oxide layer. In comparison with the case of the hole being filled with tungsten, the proportion of the O phase is increased by approximately 20%, and in experiments, the projection of the polarization direction onto the normal was found to be increased by 5%. Axial and tangential stresses are regarded to be beneficial for the formation of the O phase and for improving the orientation of the polarization direction. This work provides a theoretical basis and guidance for the three-dimensional integration of hafnium-based ferroelectric materials. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
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27. Large electrocaloric effect near room temperature induced by domain switching in ferroelectric nanocomposites.
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Yu, Zeqing, Hou, Xu, Zheng, Sizheng, Bin, Chengwen, and Wang, Jie
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PYROELECTRICITY , *FERROELECTRIC polymers , *MORPHOTROPIC phase boundaries , *FERROELECTRIC materials , *NANOCOMPOSITE materials , *HYSTERESIS loop - Abstract
The solid-state refrigeration technique based on the electrocaloric effect (ECE) of ferroelectric materials has been regarded as a promising alternative to vapor compression systems due to its advantages of high efficiency and easy miniaturization. However, the small adiabatic temperature change (ATC) and narrow operating temperature range of ferroelectric materials are key obstacles for their practical applications of ECE refrigeration. To improve the ECE performance of ferroelectric polymer poly(vinylidene fluoride) [P(VDF-TrFE)], PbZr1−xTixO3 (PZT) nanoparticles with larger polarization is herein introduced to form ferroelectric nanocomposites. The phase-field simulation is employed to investigate the dynamic hysteresis loops and corresponding domain evolution of the ferroelectric nanocomposites. The temperature-dependent ATC values are calculated using the indirect method based on the Maxwell relation. The appearance of the double hysteresis loop is observed in P(VDF-TrFE) nanocomposite filled with PbZr0.1Ti0.9O3 nanoparticles [P(VDF-TrFE)–PZT0.9], which is mainly caused by a microscopic domain transition from single domain to polar vortex. Compared to the P(VDF-TrFE), enhanced ATC values associated with the domain transition are unveiled in P(VDF-TrFE)–PZT0.9, and the temperature range of excellent ECE is also effectively broadened. In addition, as the component x of filled PZT nanoparticles increases to cross the morphotropic phase boundary (MPB), the maximum ATC value shows a significant increase. The results presented in this work not only explain the mechanism of domain transition induced excellent ECE in the P(VDF-TrFE)–PZT nanocomposite, but also stimulate future studies on enhancing ECE of P(VDF-TrFE) by introducing ferroelectric nanofillers. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
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28. Investigation of the large-signal electromechanical behavior of ferroelectric HfO2–CeO2 thin films prepared by chemical solution deposition.
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Lübben, Jan, Berg, Fenja, and Böttger, Ulrich
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FERROELECTRIC thin films , *CHEMICAL solution deposition , *PIEZOELECTRIC thin films , *FERROELECTRIC materials , *CHEMICAL properties , *ELECTRIC fields - Abstract
In this work, the piezoelectric properties of chemical solution deposition derived ferroelectric HfO2–CeO2 thin films deposited on platinized silicon substrates are investigated. Large-signal strain-field measurements show an effective piezoelectric coefficient of approximately d 33 , eff = 12.7 pm / V for 17 mol. % cerium under bipolar excitation and d 33 , eff = 8 pm / V under unipolar excitation. Progressive bipolar electric field cycling leads to a reduction in the overall field induced strain although no fatigue with regards to the polarization is observed. To explain this, we propose a model explanation based on changes in the polarization reversal pathway from a primarily ferroelastic, i.e., 90 ° domain wall mediated switching, to a 180 ° type switching. Furthermore, unipolar strain-field measurements reveal a negative intrinsic piezoelectric coefficient in the absence of any ferroelastic contribution, confirming theoretical predictions. The results suggest that the ferroelastic contribution to the field-induced strain needs to be stabilized in Hafnia-based ferroelectric materials to make them more feasible for micro-electromechanical systems. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
29. Advanced first principles-based study using berry polarization and wannier formulation to explore the promising ferroelectric material SnTiO3.
- Author
-
Belboukhari, Aimad, Benchtia, Mohammed, Bakak, Abderrahim, Jallal, Said El, Koumina, My Abdelaziz, Bentaleb, Khaled Ait, Mezzane, Daoud, and Gagou, Yaovi
- Subjects
- *
FERROELECTRIC materials , *GEOMETRIC quantum phases , *CHEMICAL bonds , *FERROELECTRICITY , *BERRIES - Abstract
Ferroelectricity is a crucial property for numerous applications and is fundamentally important for exploring a significant class of smart materials. One of the primary objectives of many theoretical approaches is to efficiently predict new promising ferroelectric compounds by gaining deep insights into their behavior, thus optimizing their performance across various shapes, geometries, and scales. Among the most compelling and exciting approaches is the intimate combination of Berry phase and Maximally Localized Wannier formulation. Therefore, our study aims to leverage these theoretical advancements to systematically investigate the electronic, chemical bonding, ferroelectric, and piezoelectric properties of the promising hypothetical bulk system SnTiO3 by comparing it with its isomorph PbTiO3. Subsequently, we will expand our comparison to slab properties, such as the effects of slab thickness on electronic properties, employing the robust Wannier-based Tight Binding model. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
30. Advanced first principles-based study using berry polarization and wannier formulation to explore the promising ferroelectric material SnTiO3.
- Author
-
Belboukhari, Aimad, Benchtia, Mohammed, Bakak, Abderrahim, Jallal, Said El, Koumina, My Abdelaziz, Bentaleb, Khaled Ait, Mezzane, Daoud, and Gagou, Yaovi
- Subjects
FERROELECTRIC materials ,GEOMETRIC quantum phases ,CHEMICAL bonds ,FERROELECTRICITY ,BERRIES - Abstract
Ferroelectricity is a crucial property for numerous applications and is fundamentally important for exploring a significant class of smart materials. One of the primary objectives of many theoretical approaches is to efficiently predict new promising ferroelectric compounds by gaining deep insights into their behavior, thus optimizing their performance across various shapes, geometries, and scales. Among the most compelling and exciting approaches is the intimate combination of Berry phase and Maximally Localized Wannier formulation. Therefore, our study aims to leverage these theoretical advancements to systematically investigate the electronic, chemical bonding, ferroelectric, and piezoelectric properties of the promising hypothetical bulk system SnTiO
3 by comparing it with its isomorph PbTiO3 . Subsequently, we will expand our comparison to slab properties, such as the effects of slab thickness on electronic properties, employing the robust Wannier-based Tight Binding model. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF
31. Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In2Se3.
- Author
-
Wang, Rui-Qi, Lei, Tian-Min, and Fang, Yue-Wen
- Subjects
- *
MAGNETIC anisotropy , *GRAPHENE , *FERROELECTRIC materials , *MAGNETIC properties , *TRANSITION metals - Abstract
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
32. Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In2Se3.
- Author
-
Wang, Rui-Qi, Lei, Tian-Min, and Fang, Yue-Wen
- Subjects
MAGNETIC anisotropy ,GRAPHENE ,FERROELECTRIC materials ,MAGNETIC properties ,TRANSITION metals - Abstract
The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In
2 Se3 , and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]- Published
- 2024
- Full Text
- View/download PDF
33. Grain size effect of the flexoelectric response in BaTiO3 ceramics.
- Author
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Yang, Xu, Xia, Baoju, Guo, Xiongxin, Qi, Yagang, Wang, Zhen, Fu, Zhenxiao, Chen, Yu, Zuo, Ruzhong, and Chu, Baojin
- Subjects
- *
GRAIN size , *PIEZORESPONSE force microscopy , *CERAMICS , *FERROELECTRIC materials , *GRAZING incidence , *DIELECTRIC properties - Abstract
Size effect is a fundamental phenomenon in ferroelectric materials and grain size dependence of the dielectric and piezoelectric properties of BaTiO3 (BTO) ceramics has been observed. However, the dependence of flexoelectric response on grain size has not been reported, thus far. In this work, BTO ceramics with grain sizes ranging from 0.59 to 8.90 μm were prepared by a two-step sintering method. We found that with increasing grain size, the flexoelectric coefficient of BTO ceramics increases from less than 20 μC/m (grain size 0.59–0.69 μm) to more than 300 μC/m (grain size 8.90 μm), but the grain size dependence of the flexoelectric response is different from that of the dielectric and piezoelectric properties. Observation by piezoresponse force microscopy reveals that the surface regions of BTO ceramics are spontaneously polarized. Strong inhomogeneous strain is measured by grazing incidence x-ray diffraction and the resultant flexoelectric effect is enough to polarize the surface regions. Fitting of the flexoelectric data indicates that the grain size effect of the flexoelectric response can be well explained by the polarized surface layer mechanism. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
34. Nonlinear magnetoelectric effects in layered multiferroic composites.
- Author
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Fetisov, Y. K. and Srinivasan, G.
- Subjects
- *
MAGNETOELECTRIC effect , *FERROELECTRIC materials , *PIEZOELECTRICITY , *MAGNETIC fields , *MULTIFERROIC materials , *PIEZOELECTRIC composites - Abstract
Magnetoelectric (ME) effects in a ferromagnetic and piezoelectric composite are the changes in the polarization caused by a magnetic field or the changes in the magnetization caused by an electric field. These effects are aided by the mechanical deformation in the ferroic phases caused by the combination of magnetostriction and piezoelectricity. Interest in ME effects is due to a variety of physical phenomena they exhibit, as well as their potential applications in the creation of highly sensitive magnetic field sensors and other electronic devices. Linear ME effects in structures with layers of different ferroic materials have been studied extensively. However, nonlinear ME effects, which are caused by the nonlinearity of the magnetic, dielectric, and acoustic properties of ferromagnets and piezoelectrics, are less well understood. The purpose of this review is to summarize the current state of knowledge on nonlinear ME (NLME) effects in composite heterostructures and to discuss their potential applications. The review begins by discussing the characteristics of materials that are conductive to the occurrence of NLME effects and ferromagnetic-piezoelectric materials that are most commonly used to study such effects. The review then provides details on theoretical approaches to the description of NLME effects in heterostructures and experimental methods for studying these effects. Finally, the review presents a chronological overview of the experimentally observed NLME effects in composite structures excited by low-frequency and pulsed magnetic or electric fields. The review concludes with a discussion on the potential applications of NLME effects for highly sensitive magnetic field sensors. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF
35. Asymmetric fracture behavior in ferroelectric materials induced by flexoelectric effect.
- Author
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Guo, Yangqin, Liu, Chang, and Li, Xiangyu
- Subjects
- *
FERROELECTRIC materials , *STRAINS & stresses (Mechanics) , *FERROELECTRIC devices , *FRACTURE toughness , *MODEL theory , *BRITTLENESS - Abstract
Ferroelectric materials are widely used in actuators, exciters, and memory devices due to their excellent electromechanical properties. However, the instinctive brittleness of ferroelectric materials makes them easy to fracture under external load. Since giant strain gradient can be easily generated near the crack tip, the flexoelectric effect is indispensable in the research of fracture properties of ferroelectric materials. With the combination of time-dependent Ginzburg–Landau theory and phase-field model, the electromechanical behavior of PbTiO 3 in the vicinity of the crack tip is determined in this work. The simulation results demonstrate that the domain structure near the crack tip becomes asymmetric with the flexoelectric effect. The polarization switching-induced toughening, which is characterized by the J -integral, depends on the direction of the crack relative to the original polarization orientation. Furthermore, the longitude flexoelectric coefficient f 11 has more significant impact on the fracture toughness than that of the transverse flexoelectric coefficient f 12 and the shear flexoelectric coefficient f 44. The results of the present work suggest that the flexoelectric effect must be considered in the reliable design of ferroelectric devices. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF
36. Ferroelectric/antiferroelectric phase coexistence or domain structure? Transmission electron microscopy study of PbZrO3-based perovskite oxides.
- Author
-
Han, Bing, Fu, Zhengqian, Hu, Tengfei, Chen, Xuefeng, Wang, Genshui, and Xu, Fangfang
- Subjects
- *
TRANSMISSION electron microscopy , *ANTIFERROELECTRIC materials , *FERROELECTRIC materials , *DIELECTRIC materials , *PEROVSKITE , *BARIUM titanate , *OXIDES - Abstract
Antiferroelectric and ferroelectric materials are prominent non-linear dielectric materials with significant applications across various fields. To fully understand their electrical properties, it is crucial to accurately discriminate the two phases, especially in compositions with the coexistence of antiferroelectric and ferroelectric phases. In this study, we propose an easy method for differentiating domain structures from phase coexistence based on split outskirt reflections. The proposed method addresses existing limitations in the spatial phase distribution and lays the groundwork for understanding their structure–property relationships. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF
37. Raman spectroscopy study of pressure-induced phase transitions in single crystal CuInP2S6.
- Author
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Rao, Rahul, Conner, Benjamin S., Jiang, Jie, Pachter, Ruth, and Susner, Michael A.
- Subjects
- *
RAMAN spectroscopy , *SINGLE crystals , *FERROELECTRIC materials , *PHASE transitions , *ELECTRONIC structure , *HYDROSTATIC pressure - Abstract
Two-dimensional ferroic materials exhibit a variety of functional properties that can be tuned by temperature and pressure. CuInP2S6 is a layered material that is ferrielectric at room temperature and whose properties are a result of the unique structural arrangement of ordered Cu+ and In3+ cations within a (P2S6)4− anion backbone. Here, we investigate the effect of hydrostatic pressure on the structure of CuInP2S6 single crystals through a detailed Raman spectroscopy study. Analysis of the peak frequencies, intensities, and widths reveals four high pressure regimes. At 5 GPa, the material undergoes a monoclinic-trigonal phase transition. At higher pressures (5–12 GPa), we see Raman peak sharpening, indicative of a change in the electronic structure, followed by an incommensurate phase between 12 and 17 GPa. Above 17 GPa, we see evidence for bandgap reduction in material. The original state of the material is fully recovered upon decompression, showing that hydrostatic pressure could be used to tune the electronic and ferrielectric properties of CuInP2S6. [ABSTRACT FROM AUTHOR]
- Published
- 2023
- Full Text
- View/download PDF
38. Raman spectroscopy study of pressure-induced phase transitions in single crystal CuInP2S6.
- Author
-
Rao, Rahul, Conner, Benjamin S., Jiang, Jie, Pachter, Ruth, and Susner, Michael A.
- Subjects
RAMAN spectroscopy ,SINGLE crystals ,FERROELECTRIC materials ,PHASE transitions ,ELECTRONIC structure ,HYDROSTATIC pressure - Abstract
Two-dimensional ferroic materials exhibit a variety of functional properties that can be tuned by temperature and pressure. CuInP
2 S6 is a layered material that is ferrielectric at room temperature and whose properties are a result of the unique structural arrangement of ordered Cu+ and In3+ cations within a (P2 S6 )4− anion backbone. Here, we investigate the effect of hydrostatic pressure on the structure of CuInP2 S6 single crystals through a detailed Raman spectroscopy study. Analysis of the peak frequencies, intensities, and widths reveals four high pressure regimes. At 5 GPa, the material undergoes a monoclinic-trigonal phase transition. At higher pressures (5–12 GPa), we see Raman peak sharpening, indicative of a change in the electronic structure, followed by an incommensurate phase between 12 and 17 GPa. Above 17 GPa, we see evidence for bandgap reduction in material. The original state of the material is fully recovered upon decompression, showing that hydrostatic pressure could be used to tune the electronic and ferrielectric properties of CuInP2 S6 . [ABSTRACT FROM AUTHOR]- Published
- 2023
- Full Text
- View/download PDF
39. In-situ characterization of temperature-dependent domain structure and permittivity of KTN crystals with applied field.
- Author
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Chen, Wendie, Liu, Bing, Fan, Songtao, Zhang, Fulin, Yang, Yuguo, Zhang, Yuanyuan, Zhang, Rui, Yu, Huajian, Qiu, Chengcheng, and Wang, Xuping
- Subjects
- *
POTASSIUM niobate , *FERROELECTRIC materials , *CURIE temperature , *HIGH voltages , *ELECTRIC fields - Abstract
Potassium tantalate niobate crystals exhibit excellent electro-optic properties in both tetragonal and cubic phases. However, domain walls typically induce light scattering, requiring high voltage poling to achieve transparency. This work investigated the effect of applied voltage during poling on the domain structure and permittivity of KTN crystals. As the applied external voltage increases, the dielectric permittivity first increases and then decreases. During this process, the domain walls of the crystal first become more densely packed and are subsequently eliminated by poling. The observed changes in the dielectric constant were explained using the modified Johnson model. By comparing the poling effects at different temperatures, it was obtained that the range of 3–5 °C below the Curie temperature is the optimal poling temperature range. By comparing the temperature-dependent permittivity under different voltages, it was found that the applied voltage can cause changes in the Curie temperature of the crystal. The relaxation factor of the KTN crystal under different voltages was obtained by fitting the temperature-dependent permittivity, showing that low electric fields can enhance the relaxation performance of ferroelectric materials. Finally, to verify the application effects of poled crystals, the evolution of domain structures under combined electrical and thermal influences was investigated. It was concluded that poled crystals near the Curie temperature are particularly sensitive to thermal effects, leading to the re-emergence of domain walls and reduced transparency. However, applying higher external voltages effectively prevents the formation of domain walls and minimizes light scattering. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
40. Rate-independent model of ferroelectric materials: finite element and finite difference solution: Rate-independent model of ferroelectric materials: M. F. Alhasadi et al.
- Author
-
Alhasadi, Mawafag F., Shahsavari, Leila, Sun, Qiao, and Federico, Salvatore
- Subjects
- *
FINITE difference method , *FINITE differences , *FERROELECTRIC materials , *DERIVATIVES (Mathematics) , *PIEZOELECTRIC materials - Abstract
Ferroelectric materials undergo a phenomenon called domain switching when subjected to electric fields exceeding a critical yielding value: an irreversible polarisation arises, that can be removed only by applying an appropriate electric field in the opposite sense. Under a cyclic electric field, this results in a hysteretic behaviour in the relation between the electric field and the polarisation. The hysteresis loop is a measure of the energy dissipated in the ferroelectric switching process. In this study, we introduce a rate-independent model of ferroelectricity, inspired by small-deformation elastoplasticity models. Analogously to the yielding surface in elastoplasticity, we define the switching surface, the boundary of the domain of the admissible states of the system. States in the interior of the domain are reversible, while states on the surface can be either reversible or irreversible, based on the relation between the electric field and the derivative of the yielding function with respect to the electric field. We solve a two-dimensional benchmark boundary-value problem by applying two numerical methods, Finite Differences and Finite Elements. Our results demonstrate the effectiveness of both methods in capturing the nonlinearities and reproducing the electrical hysteresis loops typical of ferroelectric materials. This work establishes a foundational framework for modelling rate-independent ferroelectricity and paves the way for future research on comprehensive elastoplastic-ferroelectric models for piezoelectric materials. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
41. Superior energy storage performance in NaNbO3‐based lead‐free ceramics under low electric field.
- Author
-
Liu, Kun, Peng, Ping, Lv, Zhongqian, Nie, Hengchang, and Wang, Genshui
- Subjects
- *
ENERGY storage , *ELECTRIC fields , *FERROELECTRIC materials , *ENERGY density , *FREQUENCY stability - Abstract
NaNbO3 (NN)‐based materials have attracted widespread attention due to their advanced energy storage performance and eco‐friendliness. However, achieving high recoverable energy storage densities (Wrec) and efficiency (η) typically requires ultrahigh electric fields (E > 300 kV/cm), which can limit practical use. In this work, we present a synergistic strategy that employs the ferroelectric material Bi0.5Na0.5TiO3 (BNT) to augment the Pmax and the linear material Bi0.2Sr0.7TiO3 (BST) to optimize the P–E loops. Furthermore, a two‐step sintering process is implemented to preserve high Pmax values under lower electric field. As a result, ternary (1−x)(0.90NN‐0.10BNT)‐xBST was successfully prepared, achieving a high Wrec of 5.1 J/cm3 and a η of 85% in x = 0.20 samples at a low electric field of 290 kV/cm. Moreover, the x = 0.20 samples showed good frequency stability (1–200 Hz) and temperature stability (27°C–100°C). These results provide guidance for the development of ceramics with high energy storage properties under low electric fields. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
42. Field‐effect modulated water‐splitting by photoinduced charge carriers on BiFeO3 film.
- Author
-
Tan, Kah Hui, Liu, Heng‐Jui, Yang, Jan‐Chi, Karel, Julie, and Chang, Wei Sea
- Subjects
- *
SEMICONDUCTOR films , *FERROELECTRIC materials , *SEMICONDUCTOR junctions , *INDUCTIVE effect , *BISMUTH iron oxide - Abstract
In this study, the field‐effect generated by illuminated p‐type ferroelectric bismuth ferrite (BiFeO3 or BFO) semiconductor film is utilized to modulate the water‐splitting performance of a system with a macroscopic spatial separation between the anode and cathode. When the BFO film in contact with an electrolyte is illuminated with a light of sufficiently high frequency, an electrolytic conducting channel is formed due to the field effect induced by photoexcited charge carriers in the BFO film, which in turn alters the water‐splitting pathway and the reaction mechanism. The field effect can be modulated by changing the orientation of the ferroelectric polarization in the BFO film. With a BFO film of 4.5 mm channel length and an overall upward ferroelectric polarization direction, a ∼30% increase in water‐splitting performance in a neutral‐pH electrolyte is achieved in the presence of field‐effect induced by a 20 mW 405 nm light source. The mechanism behind the field‐effect modulation is also further verified by monitoring the pH of the electrolyte during the water‐splitting process and conducting thresholding analysis on the recorded data. The field‐effect modulation described in this study can potentially be used to enhance the performance of a photoelectrochemical water‐splitting system by taking advantage of the presence of light illumination in the system or be utilized in electrochemical sensing applications. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
43. Orientation-dependent tunneling electroresistance in Pt/Pb(Zr,Ti)O3/Nb:SrTiO3 ferroelectric tunnel junctions.
- Author
-
Ding, Chunyan, Zheng, Chunyan, Zheng, Weijie, Dong, Chenyu, Yu, Yahui, and Wen, Zheng
- Subjects
RANDOM access memory ,FERROELECTRIC materials ,SCHOTTKY barrier ,POTENTIAL barrier ,NEUROPLASTICITY - Abstract
Orientation anisotropy is a well-known essential character for polarization characteristics of ferroelectric materials, which has been widely investigated in conventional ferroelectric random access memories. In this work, we study the effects of orientation on the tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs). Rhombohedral Pb(Zr 0. 7 ,Ti 0. 3 )O
3 (PZT) that has the polar axis along the 〈 1 1 1 〉 orientation is adopted as potential barriers and two kinds of FTJs that are composed of (001)- and (111)-oriented PZT barriers and Nb:SrTiO3 (Nb:STO) electrodes, respectively, are fabricated. The (111)-oriented Pt/PZT/Nb:STO FTJ exhibits a giant ON/OFF ratio of ∼ 1. 9 × 1 0 5 , about 30 times that of the (001)-oriented device, due to the lowered PZT barrier in the ON state and the widen Schottky barrier in the OFF state based on current and capacitance analyses. In addition, compared to the (001)-oriented device, the (111)-oriented FTJ shows a sharper and faster switching between the ON and OFF states according to the nucleation-limited-switching dynamics model, giving rise to good linearity in memristive behaviors for synaptic plasticity and reliable retention and endurance properties for the resistance switching. The improved TER properties are ascribed to larger effective polarizations and 180∘ switching in the (111)-oriented PZT barrier. These results facilitate the design and fabrication of high-performance FTJ devices with the optimization of crystallographic orientation and polarization switching characteristics. [ABSTRACT FROM AUTHOR]- Published
- 2025
- Full Text
- View/download PDF
44. Lowering the coercive field of van der Waals ferroelectric NbOI2 with photoexcitation.
- Author
-
Liu, Qinghang, Hu, Deng, Gao, Hang, Wang, Zhiwei, and Wang, Qinsheng
- Subjects
- *
FERROELECTRIC devices , *FERROELECTRIC materials , *OPTOELECTRONIC devices , *ELECTRIC fields , *HYSTERESIS - Abstract
Polarization switching in van der Waals ferroelectric materials driven by an electric field remains robust even at the atomic layer limit, paving the way for advances in the miniaturization and integration of ferroelectric devices. Thus, understanding the modulation of ferroelectric properties in two-dimensional ferroelectric materials is essential for their efficient nanoscale applications. NbOI2, a recently confirmed van der Waals ferroelectric, offers an ideal platform for investigating in-plane spontaneous polarization at the nanoscale. We explored the influence of laser excitation on the ferroelectric polarization properties of NbOI2. In multilayer NbOI2 devices with in-plane configurations, no significant current signals were detected along the c-axis or b-axis (the ferroelectric polarization axis) in the absence of illumination. However, under laser excitation, the material exhibited clear hysteresis loop behavior along both the c-axis and b-axis, indicating that laser excitation effectively reduces the coercive voltage. Furthermore, at the same excitation wavelength, the current peak along the c-axis was larger, with more pronounced hysteresis loops. Our experimental findings demonstrate that laser excitation can lower the coercive field in multilayer NbOI2 and induce different electrical hysteresis behavior along different crystallographic orientations, providing valuable insights for the development of NbOI2-based optoelectronic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
45. Two-Dimensional Ferroelectric Materials: From Prediction to Applications.
- Author
-
Jiang, Shujuan, Wang, Yongwei, and Zheng, Guangping
- Subjects
- *
FERROELECTRIC materials , *FERROELECTRIC crystals , *NONLINEAR optics , *FERROELECTRICITY , *CURIE temperature , *FERROELECTRIC devices - Abstract
Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure and room-temperature ferroelectricity, has led to significant advancements in the field. However, challenges such as depolarization effects, low Curie temperature, and high energy barriers for polarization reversal remain in the development of 2D ferroelectrics with high performance. In this review, recent progress in the discovery and design of 2D ferroelectric materials is discussed, focusing on their properties, underlying mechanisms, and applications. Based on the work discussed in this review, we look ahead to theoretical prediction for 2D ferroelectric materials and their potential applications, such as the application in nonlinear optics. The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
46. Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale.
- Author
-
Chiang, Tony, Lenox, Megan K., Ma, Tao, Ihlefeld, Jon F., and Heron, John T.
- Subjects
- *
FERROELECTRIC capacitors , *FERROELECTRIC materials , *ELECTRIC fields , *CAPACITORS , *FERROELECTRIC crystals - Abstract
A resurgence of research on ferroelectric materials has recently occurred due to their potential to enhance the performance of memory and logic. For the design and commercialization of such technologies, it is important to understand the physical behavior of ferroelectrics and the interplay with device size, geometry, and fabrication processes. Here, we report a study of geometric factors that can influence the measurement of the remanent ferroelectric polarization, an important measurement for understanding wakeup, retention, and endurance in ferroelectric technologies. The areal size scaling of W/Hf0.5Zr0.5O2/W capacitors is compared in two typical structures: an island top electrode with a continuous ferroelectric layer and an island top electrode/ferroelectric layer (etched ferroelectric layer). Error in the evaluation of the switched area leads to anomalous scaling trends and increasing apparent remanent polarization as capacitor sizes decrease, most strongly in continuous ferroelectric layer capacitors. Using TEM and electric field simulations, this is attributed to two effects: a processing artifact from ion milling that creates a foot on the top electrode and a fringe electric field penetrating outside of the capacitor area. With the correction of the switching area, the 2Pr for both samples agree (∼32 μC cm−2) and is invariant in the capacitor sizes used (down to 400 nm diameter). Our work demonstrates that the determination of the actual capacitor structure and local electric field is needed to evaluate the intrinsic ferroelectric behavior at the nanoscale. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
47. Sliding ferroelectricity influenced by charge doping in bilayer antiferromagnetic H–ScO2.
- Author
-
Zhu, Jiajun, Zhao, Heyun, and Hu, Wanbiao
- Subjects
- *
FERROELECTRIC materials , *CONDUCTION bands , *CONDUCTION electrons , *VALENCE bands , *FERROMAGNETIC materials - Abstract
Sliding ferroelectricity has been extensively studied as it provides an approach to designing van der Waals ferroelectric materials with nonpolar components. In this work, we demonstrate the sliding ferroelectricity of bilayer H–ScO2, which is formed by an interlayer antiferromagnetic configuration of monolayer H–ScO2 ferromagnetic material. The out-of-plane polarization results from charge transfer between the layers, causing an unequal charge distribution within them and yielding a polarization value of ± 1.26 pC/m. We found that increasing the doping concentration suppresses the polarization value. This phenomenon results from the differing occupancy ratios of electrons and holes in the conduction and valence bands after introducing electron or hole doping into the system. The closer the number of electrons in the conduction band is to that in the valence band, the more pronounced the suppression of polarization. Our work offers a perspective for the design of advanced van der Waals ferroelectric materials. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
48. Sliding ferroelectricity influenced by charge doping in bilayer antiferromagnetic H–ScO2.
- Author
-
Zhu, Jiajun, Zhao, Heyun, and Hu, Wanbiao
- Subjects
FERROELECTRIC materials ,CONDUCTION bands ,CONDUCTION electrons ,VALENCE bands ,FERROMAGNETIC materials - Abstract
Sliding ferroelectricity has been extensively studied as it provides an approach to designing van der Waals ferroelectric materials with nonpolar components. In this work, we demonstrate the sliding ferroelectricity of bilayer H–ScO
2 , which is formed by an interlayer antiferromagnetic configuration of monolayer H–ScO2 ferromagnetic material. The out-of-plane polarization results from charge transfer between the layers, causing an unequal charge distribution within them and yielding a polarization value of ± 1.26 pC/m. We found that increasing the doping concentration suppresses the polarization value. This phenomenon results from the differing occupancy ratios of electrons and holes in the conduction and valence bands after introducing electron or hole doping into the system. The closer the number of electrons in the conduction band is to that in the valence band, the more pronounced the suppression of polarization. Our work offers a perspective for the design of advanced van der Waals ferroelectric materials. [ABSTRACT FROM AUTHOR]- Published
- 2025
- Full Text
- View/download PDF
49. Heterojunction Ferroelectric Materials Enhance Ion Transport and Fast Charging of Polymer Solid Electrolytes for Lithium Metal Batteries.
- Author
-
Shan, Jiayao, Gu, Rong, Xu, Jinting, Gong, Shuaiqi, Guo, Shuainan, Xu, Qunjie, Shi, Penghui, and Min, YuLin
- Subjects
- *
PIEZOELECTRICITY , *SOLID electrolytes , *FERROELECTRIC materials , *POLYELECTROLYTES , *FERROELECTRICITY , *FERROELECTRIC ceramics , *SUPERIONIC conductors - Abstract
Solid polymer electrolytes offer great promise for all‐solid‐state batteries, but their advancement is constrained due to the low ionic conductivity at ambient temperature and non‐uniform ion transport, which hampers fast‐charging capabilities. In this study, a ferroelectric heterojunction composite is incorporated into poly(vinylidene difluoride) (PVDF) based solid electrolytes to establish an interfacial electric field that enhances lithium salt dissociation and promotes uniform ion deposition. Electrospun 1D BaTiO3 nanofibers serve as a long‐range organic/inorganic (polymer/filler) interface for ion transport, while MoSe2 hydrothermally grown on BaTiO3 forms Li2Se‐rich high‐speed ion conductors. The piezoelectric effect of the ferroelectric material helps suppress lithium dendrite growth by reversing internal charges and reducing local overpotentials. Consequently, the PVBM electrolyte achieves a substantia ionic conductivity of 6.5 × 10−4 S cm−1 and a Li‐ion transference number of 0.61 at 25 °C. The LiFePO4/PVBM/Li solid‐state batteries demonstrate an initial discharge capacity of 146 mAh g−1 at 1 C, with a capacity preservation of 80.2% upon completion of 1200 cycles, and an initial discharge capacity of 110.7 mAh g−1 at 5 C. These findings highlight the prospect of ferroelectric ceramic fillers to significantly improve ion transport and fast‐charging performance in polymer electrolytes. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
50. Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization.
- Author
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Zuo, Boyu, Lou, Xuhui, Chen, Yu, Jiang, Wentao, Wang, Qingyuan, Fan, Haidong, Qiao, Chuan, and Tian, Xiaobao
- Subjects
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FERROELECTRIC materials , *SHEARING force , *TORSION , *CYCLIC loads , *MEMRISTORS , *TORSIONAL load - Abstract
The pulse-based rapid domain structure switching method in ferroelectric memristors has stability and other issues, limiting its applications. In this study, we perform atomic simulations to investigate the polarization domain switching behavior of ferroelectric materials under non-pulse torsional loading. During torsion, uniformly distributed spontaneous polarization transitions to predominantly in-plane polarization and finally evolves to predominantly out-of-plane polarization. The out-of-plane polarization remains stable during torsion and can be adjusted through mechanical and electric fields to achieve multistability. This evolution behavior is attributed to the rapid increase in initial normal stress and continuous cyclic variation of shear stress during torsion. The non-pulse control method developed in this study lays the foundation for further research and utilization of polarization regulation in ferroelectric materials, potentially advancing the application of ferroelectric memristors. [ABSTRACT FROM AUTHOR]
- Published
- 2025
- Full Text
- View/download PDF
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