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A series of Sr4.5Ca0.5MTi3Nb7O30 [M = La0.5Nd0.5 (LN), La1/3Nd1/3Sm1/3 (LNS) and La0.25Nd0.25Sm0.25Eu0.25 (LNSE)] ceramics with different A-site configuration entropy were prepared, and the effects of the A-site configuration entropy on the dielectric and ferroelectric properties were investigated. Due to the combined effect of high entropy and solid solution, the best dielectric performance was achieved in the LNS composition, where the dielectric constant remained around 650 in the temperature range of 269–515 K with a change rate of less than 15%. Under the DC high voltage field up to 67 kV/cm, each component's polarization characteristics and dielectric constants obtained good electric field stability and temperature stability under a high electric field. [ABSTRACT FROM AUTHOR]

Molecular dynamics simulations at constant temperature and pressure were carried out to investigate the structural, dynamical, and dielectric properties of succinonitrile in its plastic and liquid phases at several thermodynamic states. A six-site united atom model was employed with a force field incorporating an intramolecular torsional term that accurately describes gauche and trans conformers. Analysis of the radial distribution function showed that succinonitrile adopts a body-centered cubic arrangement below its melting point, transitioning to a less ordered state in the liquid phase. In addition, examination of alignments between methylene bonds and the diagonals of the simulating cubic box revealed pronounced directional preferences in the plastic phase. The study of conformational states suggested that succinonitrile molecules predominantly adopt gauche conformations, which exhibit longer lifetimes than trans conformers. Spectral density analysis highlighted distinct peaks for different molecular sites, revealing significant differences between gauche and trans conformers. The correlation functions of bending and torsional angles, as well as vectors joining different atoms, illustrated a sensitivity to internal motions, which were notably faster for trans conformers. Differences in decay rates between trans and gauche conformers underscored the influence of gauche–trans transitions. The static dielectric constant, which has been derived from the total dipole moment, was primarily influenced by the contribution of the gauche conformers. In addition, the distance-dependent Kirkwood factor was computed, revealing antiparallel alignment at short distances. Finally, the dielectric relaxation time and the static dielectric constant values were compared with experimental data. [ABSTRACT FROM AUTHOR]

We critically examine a broad class of explicitly polarizable soft solvent models aimed at applications in dissipative particle dynamics. We obtain the dielectric permittivity using the fluctuating box dipole method in linear response theory and verify the models in relation to several test cases, including demonstrating ion desorption from an oil–water interface due to image charge effects. We additionally compute the Kirkwood factor and find that it uniformly lies in the range g K ≃ 0.7 –0.8, indicating that dipole–dipole correlations are not negligible in these models. This is supported by the measurements of dipole–dipole correlation functions. As a consequence, Onsager theory over-predicts the dielectric permittivity by 20%–30%. The mean square molecular dipole moment can be accurately estimated with a first-order Wertheim perturbation theory. [ABSTRACT FROM AUTHOR]

To maximize the piezoelectric performance of Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) single crystals, a pulse poling (PP) method is proposed in this study. This study investigates the effects of pulse poling on the piezoelectric and dielectric properties of these PMN–PT single crystals and explores the polarization rotation mechanisms. Our findings indicate a significant improvement in the piezoelectric properties postpulse poling. The optimal PP conditions are identified as 30 pulse numbers at a pulsed electric field of 5 kV/cm. The dielectric constant ɛT33/ɛ0 and piezoelectric coefficient d33 of PMN–0.28PT post PP are 7000–7700 and 2200–2530 pC/N, respectively, representing increases of 49% and 66% compared with those of postdirect current poling (DCP). Additionally, the domain structures of the PMN–0.28PT single crystals after various DCP and PP treatments are examined and compared using piezoelectric force microscopy. The enhanced piezoelectric properties are attributed to the finer domain structures, as well as increased domain wall density achieved through PP. This research introduces a novel domain engineering approach to improve the electromechanical properties of relaxor ferroelectric single crystals. [ABSTRACT FROM AUTHOR]

Perovskite structures have attracted extensive attention in microelectromechanical systems and nanoelectromechanical systems devices due to the high piezoelectric response and the low dielectric constant. The piezoelectric and dielectric properties of the tetragonal BiFeO3/BaTiO3 superlattices grown along the c-axis direction are investigated using density functional theory (DFT) and density functional perturbation theory. The calculated results demonstrate that the (BiFeO3)n/(BaTiO3)n (n = 1–5) superlattices exhibit a profoundly increased piezoelectric response compared to their bulk structures. The (BiFeO3)2/(BaTiO3)2 possesses the highest piezoelectric d33 of 697 pC/N among known lead-free perovskite systems. Furthermore, the (BiFeO3)2/(BaTiO3)2 superlattice possesses a low dielectric ɛ33, and its d33 at 2% tensile strain is 16 times larger than that of an unstrained equilibrium structure. This demonstrates that biaxial tensile strain significantly enhances the piezoelectric response. Combining the special quasirandom structure method with DFT, the structures of a 0.5BiFeO3–0.5BaTiO3 solid solution are predicted, and its calculated d33 is 58 pC/N, which is much smaller than that of a (BiFeO3)2/(BaTiO3)2 superlattice. The results suggest that the (BiFeO3)2/(BaTiO3)2 superlattice might be a potential candidate for nonvolatile random access memory, transducers and actuators, and nanoscale electronic devices. [ABSTRACT FROM AUTHOR]

The mechanical and dielectric properties of transformer insulating paper are key factors that require close attention to ensure optimal operation. In this study, a novel approach of enhancing properties by nanocellulose modification was proposed. To investigate the effect of doping, insulating paper with different doping mass fractions of cellulose nanocrystals (CNCs) was prepared, and multiple properties of the sample were characterized. By applying a doping concentration gradient, the non-monotonic trend in performance with doping levels was revealed, and the impact of doping concentration on the data variability was investigated. The effects of CNC doping on the surface pore size of the samples were analyzed by SEM (scanning electron microscopy) and a mercury intrusion method, and the regularity of CNC dispersion uniformity with doping concentration was investigated. The Brunauer, Emmett, and Teller model was employed to fit the water vapor adsorption isotherm data, providing an analysis of the impact of doping on hydrogen bond connections and the moisture adsorption properties. Tensile strength and Young's modulus were measured and analyzed using the Page model and the Halpin–Kardos model. The tensile strength of the 6 wt. % CNC-modified paper was increased by 6.91%. 10 wt. % CNC-modified paper had a Young's modulus increase of 11.98%. 3 wt. % CNC-modified paper has a 28.53% increase in the AC breakdown field strength and an 8.72% increase in the DC breakdown field strength. The influence of CNC on the dielectric properties of the insulating paper was discussed using the Havriliak–Negami (H–N) model. The results indicate that the introduction of CNC can effectively enhance the comprehensive performance of oil-immersed insulating paper. [ABSTRACT FROM AUTHOR]

Gratings are widely used for coupling into and out of evanescent and propagating electromagnetic modes, which are otherwise not accessible due to their large in-plane wave vector. A precise description of the optical response requires the knowledge of the grating geometry. Here, we present an investigation of the optical properties of dielectric gratings of sub-micron periodicity fabricated on a multilayer structure, which supports Bloch surface waves, by means of spectroscopic ellipsometry. Taking into account non-idealities, such as the finite spectral bandwidth, in the modeling process is shown to be a necessity for an accurate description of the observed spectra. The grating geometry determined from the analysis of ellipsometry data agrees very well with atomic force microscopy scans. Thus, our ellipsometric model is corroborated. [ABSTRACT FROM AUTHOR]

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga2O3/Al2O3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga2O3/Al2O3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga2O3 or Al2O3. Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga2O3/Al2O3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga2O3/Al2O3 ALS can have tunable bandgaps (Eg) between ∼2.0 eV for 100% Ga2O3 and ∼3.4 eV for 100% Al2O3. With variable ratios of Ga:Al, the measured Eg exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant ε of ultrathin Ga2O3/Al2O3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga2O3 and Al2O3 atomic layer numbers from 9.83 for 100% Ga2O3 to 8.28 for 100% Al2O3. The high ɛ leads to excellent effective oxide thickness ∼1.7–2.1 nm for the ultrathin Ga2O3/Al2O3 ALS, which is comparable to that of high-K dielectric materials. [ABSTRACT FROM AUTHOR]

Hexagonal boron nitride (h-BN) has excellent thermal conductivity and dielectric properties, which shows great potential for low-dimensional devices. However, mechanical properties of h-BN have not been comprehensively investigated through experiments. In this work, we conduct in situ direct tensile tests on freestanding single-crystal few-layer h-BN nanosheets with various layer numbers from 3 to 8, with an elaborate sample transfer and characterization protocol. Young's modulus of 573.8 ± 101.4 GPa and a tensile fracture strain up to 3.2% are revealed, which are comparable to its monolayer counterpart. Moreover, we find a tough-to-brittle transition in few-layer h-BN with the increase in layer number, which is attributed the interplay between the van der Waals interaction and in-plane covalent bonding. These findings could open up new possibilities in mechanical research of van der Waals materials and provide guidance for the design of h-BN-based devices and composites. [ABSTRACT FROM AUTHOR]

The effects of the solution's dielectric properties on the conformation and dynamics of star-shaped polyelectrolytes in shear flow are investigated using a hybrid simulation method coupling multi-particle collision dynamics and molecular dynamics. The simulation results showed that by modulating the dielectric properties of the solution, star-shaped polyelectrolytes showed a three-step dynamic behavior transition from tumbling to tank-treading to tumbling dynamics under shear flow. The analysis indicated that this distinct transition in dynamics could be attributed to the uneven distribution of counterions induced by shear on the chain, resulting in a change in the polyelectrolyte conformation and degree of segmental alignment in arms. These findings contribute to a comprehensive understanding of the non-equilibrium dynamics of star-shaped polyelectrolytes in shear flow and offer a viable approach for controlling the dynamic behavior of star-shaped polyelectrolytes by adjusting the dielectric properties of the solution. [ABSTRACT FROM AUTHOR]

Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a widely used small-molecular p-type organic semiconductor. Despite the broad availability of high-performance DNTT transistors, there is a lack of investigation into other devices based on this semiconductor. In this study, rectifying diodes with DNTT as a single transport medium are fabricated and characterized. Realizing unipolar current rectification from asymmetric metal contacts, a number of physical and electrical properties of DNTT are made accessible. Current–voltage measurement, broad-band impedance spectroscopy, drift-diffusion simulation, and equivalent-circuit modeling are combined to quantify important parameters such as dielectric constant, trap energy, and lifetime. These results provide a practical reference for the design and optimization of diverse electronic devices incorporating DNTT. [ABSTRACT FROM AUTHOR]

(Bi0.5Na0.5)1−xBaxTiO3 lead-free ferroelectric ceramics were synthesized via the conventional solid-state reaction method. Structural and dielectric properties were investigated as a function of the doping concentration, considering x = 0, 2, 5, 8, 10, 12, 16, and 18 at. % Ba. The structural analyses were carried out from the x-ray diffraction technique, including the Rietveld refinement method, and Raman spectroscopy. Results confirmed the formation of the perovskite structure, revealing different crystalline symmetries, depending on the Ba2+ concentration: the single rhombohedral ferroelectric phase (R3c) for x = 0 and 2 at. %; coexistence of both rhombohedral ferroelectric (R3c) and tetragonal antiferroelectric (P4bm) phases for x = 5 at. % Ba; the single tetragonal antiferroelectric phase (P4bm) for x = 8 at. % Ba; coexistence of two tetragonal phases (antiferroelectric P4bm and ferroelectric P4mm) for x = 10 at. % Ba; and the single tetragonal ferroelectric phase (P4mm) for x = 12, 16, and 18 at. % Ba. The characteristics of the phases' transition, investigated from dielectric analysis, revealed the presence of two dielectric anomalies, which indeed have been associated to different phases' transitions, one of them showing relaxor-like characteristics. The obtained results offer new insights for a better understanding on the features of the phase diagram for the studied ceramic system, according to the different observed crystalline symmetries (ferroelectric and antiferroelectric) in a very wide doping concentration. In the light of the obtained results, a new phase diagram has been proposed considering a wider compositional range than those reported in the literature. [ABSTRACT FROM AUTHOR]

As investigations in the biomedical applications of plasma advance, a demand for describing safe and efficacious delivery of plasma is emerging. It is quite clear that not all plasmas are "equal" for all applications. This Perspective discusses limitations of the existing parameters used to define plasma in context of the need for the "right plasma" at the "right dose" for each "disease system." The validity of results extrapolated from in vitro studies to preclinical and clinical applications is discussed. We make a case for studying the whole system as a single unit, in situ. Furthermore, we argue that while plasma-generated chemical species are the proposed key effectors in biological systems, the contribution of physical effectors (electric fields, surface charging, dielectric properties of target, changes in gap electric fields, etc.) must not be ignored. [ABSTRACT FROM AUTHOR]

In this paper, the high-quality factor mullite microwave dielectric ceramic is employed to introduce in dielectric resonator antenna (DRA). The microwave dielectric properties of ɛr ∼ 5.8, Q × f ∼ 31 240 at 9.66 GHz, and loss tangent tanδ = 1/Q ∼ 2.7 × 10−4 can be obtained by the solid-state reaction method in mullite microwave dielectric ceramic sintered at 1700 °C. On this basis, the resonant modes of the proposed broadband high-gain rectangular DRA are analyzed by using a dielectric waveguide theoretical model and the antenna performance is evaluated by a commercial CST Microwave Studio 2021® software. It has been found that the proposed rectangular DRA can provide a broad bandwidth of 35.9%, a maximum gain of 10 dBi at 3.61 GHz, and a radiation efficiency of 90% in the range of 3.13–4.42 GHz. For demonstration, adequate consistency between the simulation results and the measurement results was achieved. The proposed DRA has great application potential and value in 5G communication scenarios requiring wideband and high-gain antenna. [ABSTRACT FROM AUTHOR]

Thermally stimulated discharge (TSD) technique is a traditional method in dielectric research, especially for electrets. However, in conventional open-circuit and short-circuit TSD techniques, it is difficult to distinguish the surface charge and body charge of dielectric materials. In particular with the test of polymer electrets, the deformation of the polymer film may take place during the measurement process, which will affect the accuracy of the experiment results. In this paper, a glass-assisting TSD (GA-TSD) technique is proposed to solve the above problems. The feasibility of the experimental technique is verified with the GA-TSD spectra of fluorinated ethylene-propylene copolymer electret films. In addition, their theory analysis is also accomplished. The influences of glass thickness, glass dielectric property, and metallizing on the glass on GA-TSD spectra are investigated. The results prove that the GA-TSD spectra can clearly distinguish the difference between surface charge and body charge according to the current direction. The quartz glass with the lowest dielectric constant is best suitable for the GA-TSD technique. The influence of the glass thickness and metallizing on the glass on GA-TSD spectra is little. [ABSTRACT FROM AUTHOR]

Ultrawide bandgap ZnGa2O4 (ZGO) thin films were grown on sapphire (0001) substrates at various growth temperatures with a perspective to investigate the electrical and optical characteristics required for high-power electronic applications. Due to the variation in the vapor pressure of Zn and Ga, severe loss of Zn was observed during pulsed laser deposition, which was solved by using a zinc-rich Zn0.98Ga0.02O target. A pure phase single-crystalline ZGO thin film was obtained at a deposition temperature of 750 °C and an oxygen pressure of 1 × 10−2 Torr. The out-of-plane epitaxial relationship between the sapphire and ZGO thin film was obtained from φ-scan. The x-ray rocking curve of the ZGO thin film grown at 750 °C exhibits a full width at half maximum of ∼0.098°, which indicates a good crystalline phase and quality of the thin film. Core-level x-ray photoelectron spectroscopy of ZGO grown at 750 °C indicated that Zn and Ga were in the 2+ and 3+ oxidation states, respectively, and the atomic ratio of Zn/Ga was estimated to be ∼0.48 from the fitted values of Zn-2p3/2 and Ga-2p3/2. The high-resolution transmission electron microscopy images revealed a sharp interface with the thickness of the ZGO film of ∼265 nm, and the signature of minor secondary phases was observed. The bandgap of the ZGO film at different growth temperatures was calculated from the ultraviolet-diffuse reflectance spectroscopy spectra, and its value was obtained to be ∼5.08 eV for the 750 °C grown sample. The refractive index (n) and the extinction coefficient (k) were determined to be ∼1.94 and 0.023 from the ellipsometric data, respectively, and the real dielectric function (ɛr) was estimated to be ∼6.8 at energy 5 eV. The ultrawide bandgap and dielectric function of ZGO recommend its possible potential applications in deep-ultraviolet optoelectronic devices and high-power electronics. [ABSTRACT FROM AUTHOR]

We report the nonlinear dielectric properties of three triple-perovskite ruthenates: Ba 3 CoRu 2 O 9 , Ba 3 BiRu 2 O 9 , and Sr 3 CaRu 2 O 9. These compounds exhibit notable correlations among their spin, charge, lattice, and polar degrees of freedom. Ba 3 CoRu 2 O 9 displays a pronounced frequency-dependent relaxation in χ 2 , 3 just above the magnetoelastic transition, occurring around 100 K, followed by an abrupt loss of polarization within the ordered phase. In Ba 3 BiRu 2 O 9 , we encounter the possibility of multiple coexisting relaxation behaviors, indicating a complex phase strongly influenced by the spin-gap opening at 175 K. Lastly, Sr 3 CaRu 2 O 9 displays anomalies with strong dispersion effects close to its magnetic transitions, indicating a robust coupling between magnetic and dipolar orders in the system. These measurements highlight the significance of higher-order (hyper-)susceptibilities in providing profound insight into the dynamics of a system, offering information otherwise inaccessible through the linear polarization response alone. [ABSTRACT FROM AUTHOR]

To develop special insulating paper is of great significance to promote the service life of transformers. Using molecular simulation to guide the development of special insulating paper can greatly reduce the trial-and-error rate and waste of resources in traditional experiments. The effect of different types of polysilsesquioxane (POSS) on cellulose insulating paper was investigated by using molecular simulation. This paper investigated the thermal stability and mechanical properties and electrical characteristics of caged POSS, semi-caged POSS, and ladder-like POSS doped cellulose insulating paper. The results show that POSS with all types can enhance the performance of cellulose insulating paper, and ladder-like POSS possess the best modification effect. The glass transition temperature was increased by 58 K, and the bulk modulus, shear modulus, and elastic modulus of cellulose insulating paper doped with ladder-like POSS can improve up to 27.07%, 45.67%, and 41.28%, respectively. Meanwhile, the dielectric properties of ladder-like POSS modified insulating paper are also significantly improved. The findings of this paper propose a method for the preparation of ladder-like POSS modified insulating paper, which provides theoretical guidance for the experimental preparation of special insulating paper. [ABSTRACT FROM AUTHOR]

Based on the transport and polarization relaxation theories, the effects of hydrogen, fluorine, and chlorine atom passivation on the conductivity and dielectric properties of silicon carbide nanowires (SiCNWs) were numerically simulated. The results show that passivation can decrease the dark conductivity of SiCNWs and increase its ultraviolet photoconductivity. Among them, the photoconductivity of univalent (H) passivated SiCNWs is better than that of seven-valent (Cl, F) passivated SiCNWs. In terms of dielectric properties, the passivated SiCNWs exhibit a strong dielectric response in both deep ultraviolet and microwave regions. Hydrogen passivation SiCNWs produce the strongest dielectric response in deep ultraviolet, while fluorine passivation SiCNWs produce the strongest dielectric relaxation in the microwave band, which indicates that atomic passivation SiCNWs have a wide range of applications in ultraviolet optoelectronic devices and microwave absorption and shielding. [ABSTRACT FROM AUTHOR]

The dependence of the dielectric permittivity of ferroelectric materials on electric field magnitude impacts the performance of ferroelectric devices. In a ferroelectric generator, a shock wave travels through the ferroelectric element and depolarizes it, and surface charges are released from the element electrodes, resulting in the generation of a megawatt power level for several microseconds. The dielectric properties of the compressed and uncompressed zones of the ferroelectric element affect the generated voltage and energy. The results of previous studies indicate that the low-field dielectric permittivity of poled Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 (PZT 95/5) ferroelectrics in the uncompressed zone differs significantly from the high-field permittivity. Herein, the results are presented from the experimental investigation of the high-field permittivity of poled uncompressed PZT 95/5 ferroelectric ceramics and films, PZT 52/48 ferroelectric ceramics, and rhombohedral 0.27Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.26PbTiO3 (0.27PIN-PMN-0.26PT) and 0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3 (0.68PMN-0.32PT) ferroelectric single crystals. The dependences of the permittivity on the electric field were determined using a pulsed electric field ranging from 0.1 to 10 kV/mm. The data indicate that the application of a pulsed high electric field results in a fourfold increase in the relative permittivity of PZT 95/5 ceramics and films over the small signal value (from 300 to 1200), and a threefold increase in the permittivity of single-domain [111]c cut and poled 0.27PIN-PMN-0.26PT crystals (from 700 to 2100), while a high electric field does not have a significant impact on the permittivity of PZT 52/48 ceramics or 0.27PIN-PMN-0.26PT and 0.68PMN-0.32PT crystals cut and poled in the domain engineered [001]c or [011]c direction. [ABSTRACT FROM AUTHOR]

Molecular simulations serve as indispensable tools for investigating the kinetics and elucidating the mechanism of hindered ion transport across nanoporous membranes. In particular, recent advancements in advanced sampling techniques have made it possible to access translocation timescales spanning several orders of magnitude. In our prior study [Shoemaker et al., J. Chem. Theory Comput. 18, 7142 (2022)], we identified significant finite size artifacts in simulations of pressure-driven hindered ion transport through nanoporous graphitic membranes. We introduced the ideal conductor model, which effectively corrects for such artifacts by assuming the feed to be an ideal conductor. In the present work, we introduce the ideal conductor dielectric model (Icdm), a generalization of our earlier model, which accounts for the dielectric properties of both the membrane and the filtrate. Using the Icdm model substantially enhances the agreement among corrected free energy profiles obtained from systems of varying sizes, with notable improvements observed in regions proximate to the pore exit. Moreover, the model has the capability to consider secondary ion passage events, including the transport of a co-ion subsequent to the traversal of a counter-ion, a feature that is absent in our original model. We also investigate the sensitivity of the new model to various implementation details. The Icdm model offers a universally applicable framework for addressing finite size artifacts in molecular simulations of ion transport. It stands as a significant advancement in our quest to use molecular simulations to comprehensively understand and manipulate ion transport processes through nanoporous membranes. [ABSTRACT FROM AUTHOR]

Size effect is a fundamental phenomenon in ferroelectric materials and grain size dependence of the dielectric and piezoelectric properties of BaTiO3 (BTO) ceramics has been observed. However, the dependence of flexoelectric response on grain size has not been reported, thus far. In this work, BTO ceramics with grain sizes ranging from 0.59 to 8.90 μm were prepared by a two-step sintering method. We found that with increasing grain size, the flexoelectric coefficient of BTO ceramics increases from less than 20 μC/m (grain size 0.59–0.69 μm) to more than 300 μC/m (grain size 8.90 μm), but the grain size dependence of the flexoelectric response is different from that of the dielectric and piezoelectric properties. Observation by piezoresponse force microscopy reveals that the surface regions of BTO ceramics are spontaneously polarized. Strong inhomogeneous strain is measured by grazing incidence x-ray diffraction and the resultant flexoelectric effect is enough to polarize the surface regions. Fitting of the flexoelectric data indicates that the grain size effect of the flexoelectric response can be well explained by the polarized surface layer mechanism. [ABSTRACT FROM AUTHOR]

The Adaptive Solvent-Scaling (AdSoS) scheme [J. Chem. Phys. 155 (2021) 094107] is an adaptive-resolution approach for performing simulations of a solute embedded in a fine-grained (FG) solvent region surrounded by a coarse-grained (CG) solvent region, with a continuous FG ↔ CG switching of the solvent resolution across a buffer layer. Instead of relying on a distinct CG solvent model, AdSoS is based on CG models defined by a dimensional scaling of the FG solvent by a factor s, accompanied by the s-dependent modulation of its mass and interaction parameters. The latter changes are designed to achieve an isomorphism between the dynamics of the FG and CG models, and to preserve the dispersive and dielectric solvation properties of the solvent with respect to a solute at FG resolution. As a result, the AdSoS scheme minimizes the thermodynamic mismatch between different regions of the adaptive-resolution system. The present article generalizes the scheme initially introduced for a pure atomic liquid in slab geometry to more practically relevant situations involving (i) a molecular dipolar solvent (e.g., water); (ii) a radial geometry (i.e., spherical rather than planar layers); and (iii) the inclusion of a solute (e.g., water molecule, dipeptide, ion, or ion pair). [ABSTRACT FROM AUTHOR]

With the rapid progress of the advanced electronic device industry, precision electronic instruments are gradually developing towards miniaturization. In this case, epoxy resin gradually attracts people's attention, but its intrinsic thermal conductivity is not high, and the resulting heat dissipation problem limits the further application of epoxy resin in the field of electronic packaging. Therefore, how to enhance the thermal conductivity of epoxy resins has become an urgent problem in the field of electronic packaging. In this work, BNNS was successfully prepared by stripping h‐BN into a flaky two‐dimensional material, which was added to the epoxy resin as a filler to make the composite material. And on the basis of the above, two‐dimensional micron silver flakes (AgMS) with different mass fractions were added to the composites, and the AgMS/BNNS/EP composites were successfully prepared. When BNNS was 25 wt% and AgMS was 1 wt%, its out‐of‐plane thermal conductivity was enhanced from 0.17 W m−1 K−1 of pure epoxy resin to 0.43 W m−1 K−1. When BNNS was 20 wt% and AgMS was 1 wt%, the breakdown strength was enhanced from 105 kV/mm for pure epoxy to 130 kV/mm. This work provides a new strategy for synthesizing high‐thermal‐conductivity epoxy matrix composites. [ABSTRACT FROM AUTHOR]

With the development of power systems and electronic devices, epoxy resin (EP) is facing increasingly severe operating environments, and its performance may not meet expectations. In order to broaden the application of EP, the DE/EP composite films were prepared with EP as matrix, polyacrylic rubber dielectric elastomer (DE) as reinforcement materials. The structure of DE/EP composite films was characterized by XRD, SEM, and other methods, and the electrical and thermal properties of the materials were tested and studied. The study found that with appropriate dissolution and stirring treatment, DE can be evenly dispersed in the EP matrix, and the introduction of DE does not significantly affect the structure of the EP molecular chain, also found the introduction of DE improve the electrical and thermal properties of EP. The breakdown strength of the 4% DE/EP composite film surpasses that of the pure EP film by 15.58%. Additionally, the thermal conductivity of the 8% DE/EP composite film is elevated by 41.6% compared to the pure EP film, while its dielectric constant is also enhanced by 8.2%. This work may provide a theoretical basis for studying the application of EP modified system in electrical engineering, integrated circuit packaging and other fields. [ABSTRACT FROM AUTHOR]

With the waste of resources caused by human activities, it has gradually become an increasingly prominent social problem. The development of self-healing polymers in the field of insulation has attracted widespread attention. Develop polymer matrices with efficient healing efficiency and sound insulation properties to achieve green and sustainable resource conservation. In addition, improving the dielectric properties of intrinsic self-healing matrices has been a hot topic. In this work, we developed a new PEI matrix-modified self-healing polymer substrate that provides a breakdown field strength of 240 kV/mm and self-healing properties at room temperature, this has significantly improved the dielectric properties over other previously reported self-healing polymers. In addition to the abovementioned performance, we found significant differences in thermodynamic behavior in the synthesized end-modified polymers. By dielectric characterization (LCR), the breakdown composite can be left at room temperature for 60 min, and the material can recover 80 % of the initial properties without external intervention(This is demonstrated by the fact that its DC conductivity at 60 min of autonomous healing was significantly changed from that of the freshly electrically pierced DC conductivity and remained around 5.38 × 10−11 S/cm for a longer period of time thereafter). The microscopic morphology of the modified PEI matrix was observed by scanning electron microscopy (SEM) and EDS surface elemental analysis, which further supports the existence of metal coordination structures. These findings can further deepen the thinking of self-healing dielectric composites. The work inspired by this may break the limits and take self-healing composite dielectric materials to a new height. [ABSTRACT FROM AUTHOR]

The dielectric properties of (Ga, Al)-doped ZnO ceramics were studied by density functional theory (DFT) and experimental aspectes. In the first, the combustion method was used to prepare the pristine ZnO and Ga-, Al-doped, and codoped ZnO nanopowders, then calcined nanoparticles were characterized by x-ray diffraction technique (XRD), and field emission scanning electron microscopes (FE-SEM). Finally, the synthesized nanopowders were sintered and the dielectric properties of the ceramics were measured to reveal the effect of Ga and Al doping on ZnO. In case of the density functional theory (DFT) calculation which is conducted on the Vienna Ab initio Simulation Package (VASP) using generalized gradient approximation with Hubbard parameter (GGA + U), 4 × 2 × 2 supercells of pure ZnO and Ga-, Al-doped and codoped ZnO were modeled. The supercells were optimized, and then the density of states (DOS) were investigated. From the DFT results, doping Al and Ga shifts the Fermi level to higher states. Additionally, the semiconductive behavior of ZnO changes to a metallic character after Al and Ga doping. Thus, we found from the DFT calculation that it is possible that Al and Ga doping can improve the dielectric properties of ZnO. According to the results, we have successfully synthesized (Al, Ga)-doped ZnO ceramics. Interestingly, Ga-doped ZnO ceramics exhibited colossal dielectric response with low tanδ (about 0.83) and high ε′ (around 40,623). Ga doping in ZnO benefits dielectric properties more than Al doping and co-doping due to Ga's closer ionic radius to Zn, which minimizes lattice distortion and defects. This leads to improved stability of the ZnO lattice, reducing the formation of oxygen vacancies and enhancing dielectric performance. Therefore, it can be summarized that this work succeeds in the enhancement of dielectric properties of ZnO by Ga doping. As a result, ZnO could be a higher-efficiency dielectric material when it is doped by Ga. [ABSTRACT FROM AUTHOR]

Environment-friendly piezoelectric micro/nanogenerators have attracted tremendous attention due to the increasing demand for portable self-power devices. Here, the [(0.94−x)Bi 0.5 Na 0.5 TiO 3 –0.06BaTiO 3 –xK 0.5 Na 0.5 NbO 3 ; BNT-BT-xKNN] lead-free ceramic, at x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10 mol%, was prepared via the solid-state method. The doping concentration x = 0.02 mol% shows the highest dielectric properties and the lowest dielectric loss. The active layer of the hybrid device is made by mixing BNT-BT-2KNN into the PDMS to form a series of polymer-ceramic composite films ranging from 7 to 19 wt% of BNT-BT-2KNN. The electrical response of the composite film is systematically studied with the addition of different weight percentages of the particles to the PDMS matrix. It was found that incorporating BNT-BT-2KNN at 11 wt% into the PDMS matrix exhibited the optimum harvesting performance, resulting in an output voltage and current density of about 30 V and 0.28 μA/cm2, respectively. The hybridized PENG and TENG devices could operate in a long-term cyclic mode, charge the capacitor for energy storage, and also light up LEDs. This research proposed a simple device fabrication and provided a guideline for the development of high-performance microgenerators, which is crucial for device development and practical use in the future. [ABSTRACT FROM AUTHOR]

The development of lead-free dielectric capacitors with high recoverable energy storage density and high energy storage efficiency is important for improving the overall performance of electronic and power systems. BaTiO 3 (BTO) is one of the most common ferroelectric materials and has attracted much attention for energy storage applications in the past decades due to its excellent dielectric and ferroelectric properties. However, high remnant polarization and low electrical breakdown strength of BTO limit its development in energy storage applications. Many efforts (e.g., elements doping, interface/heterostructure, etc.) have been made to improve the energy storage density of BTO thin films. In this paper, Ba 1-x Ni x TiO 3 thin films (x = 0, 0.02, 0.04, 0.06, 0.08; abbreviated as BN x T) were synthesized via sol-gel and spin-coated method. The effect of Ni doping on the structural, dielectric, ferroelectric and energy storage properties of BTO thin films has been studied. The results confirmed that with the increase of Ni doping, a second phase arises and the dielectric constant decreases. While appropriate Ni doping led to the improvement of the breakdown strength, further increase of Ni deteriorated the energy storage because of the high oxygen vacancy. Finally, optimized energy storage performance was obtained for BN 0.04 T thin film: dielectric constant of 401, dielectric loss of 0.002, recoverable energy density of 20.2 J/cm3 and energy storage efficiency of 83.6% at 965 kV/cm. Meanwhile, the remnant and maximum polarization of the films were 0.06 μC/cm2 and 50 μC/cm2, respectively. BN 0.04 T thin film has an excellent application prospect and is expected to appear as a component in the future composite energy storage film system. [ABSTRACT FROM AUTHOR]

With the continuous development of society, the energy demand is also increasing, and the consumption of fossil fuels is becoming more and more serious. Dielectric capacitors are widely used in electronic devices due to their advantages of fast charging and discharging speed and high power density. In this work, 2D-Na 0.5 Bi 0.5 TiO 3 (2D-NBT) filler and polyimide (PI) polymer matrix were compounded to prepare 2D-NBT/PI composites, and the energy storage performance of the composites was improved by surface modification of the filler and the design of 'sandwich' structure. The prepared samples were analyzed by XRD, SEM and dielectric properties. For 2D-NBT/PI single-layer composites, when the volume fraction of NBT powder is 0.25 vol.%, the energy storage density of the composites reaches 11.11 J/cm3 under the electric field of 400 kV/mm. For the 'sandwich' structure 2D-NBT/PI composites, when the system of 2D-NBT/PI composites is 0.25-0-0.25, the energy storage density of the composites reaches 12.44 J/cm3 under the electric field of 440 kV/mm. [ABSTRACT FROM AUTHOR]

Lead-free ferroelectric ceramics with a composition of 0.7(Bi 0.5 Na 0.5) 0.7 Sr 0.3 Ti (1- x) O 3 -0.3Ba 0.94 La 0.04 (Mg 1/3 Nb 2/3) x O 3 (abbreviated as 0.7BNST (1- x) -0.3BL(MN) x , 0 ≤ x ≤ 0.12) were prepared using solid-phase sintering method, involving co-substituting at A and B sites. High recoverable energy density (W rec) of 3.54 J/cm3 and energy efficiency (η) 85.49% are achieved at an electric field of 270 kV/cm. Furthermore, these ceramics exhibited excellent temperature and cycle stability at 120 kV/cm (within 25 °C–150 °C, W rec fluctuation range <14 %; under 1∼106 cycles, the W rec fluctuation range <5 %). In terms of dielectric performance, they exhibited a high dielectric constant (ε r ∼4540), an extremely low dielectric loss tanδ of <0.04 (30 °C–300 °C), and good temperature stability with Δ ε / ε 150 °C ≤ ±15 % (−19.5 °C–233.4 °C). During the charging and discharging process, these ceramics demonstrated a high energy density (W d) of 1.2 J/cm3, a power density (P D) of 61.7 MW/cm3, and an extremely short discharge time (t 0.9) of approximately ∼0.11 μs. This study has improved the dielectric energy storage performance of BNT-based lead-free piezoelectric ceramics, making them suitable for use in pulse power devices. [ABSTRACT FROM AUTHOR]

Recently, fluoride ceramics have gained much interest because of their low permittivities and high Q×f values at microwave frequencies, coupled with relatively low sintering temperatures. In this paper, we have explored the effects of the particle-size and O contamination of LiF raw material, sintering/annealing atmosphere on the mechanosynthesis, structural stability, and microwave dielectric properties of BaLiF 3 ceramic. Using a fine LiF raw material would facilitate the mechanical synthesis of BaLiF 3 , being densified at lower temperatures than the coarse one. A high concentration of oxygen contamination in LiF raw material and partial pressure of O 2 in the sintering atmosphere would lead to the formation of BaF 2 due to the instability of the fluoride perovskite with an increase in the concentration of F-vacancies caused by the partial oxidization during the sintering at high temperature (850 °C/2h). The oxidization of fluoride perovskite preferably occurs at the surface and grain boundaries via O diffusion, which reduces the Q×f value from 83175 to 70228 GHz with little change in ε r (∼11) and τ f values (∼-71 ppm/°C). [ABSTRACT FROM AUTHOR]

With the rapid development of integrated circuits, TiO 2 -based colossal dielectric constant ceramics have been widely studied as a critical alternative material in MLCC (Multilayer Ceramic Capacitors). However, the preparation technique is primarily based on the traditional solid-phase reaction method. In this work, (In 0.5 V 0.5) 0.1 Ti 0.9 O 2 , (In 0.5 Nb 0.5) 0.1 Ti 0.9 O 2 , and (In 0.5 Ta 0.5) 0.1 Ti 0.9 O 2 (abbreviated as IVTO, INTO, and ITTO) ceramics were prepared by a sol-gel method. In comparison, Nb5+ (r = 0.64 Å) and Ta5+ (r = 0.65 Å) have close ionic radii, which are more susceptible to Ti4+ (r = 0.745 Å) sites substitution than V5+ of a small ionic radius (r = 0.54 Å), effectively facilitating the carrier concentration. Meanwhile, the Ta5+ has another advantage in refining the ceramic grain size to further improve grain boundary resistance. The ITTO ceramics show a colossal dielectric constant of 9.3 × 104, low dielectric loss of 0.07 (1 kHz, room temperature), and stable temperature application range for X9F (−55 °C–200 °C，Δε r /ε 25 °C ≤ ±7.5 %). The dielectric mechanism is related to the internal barrier layer capacitance (IBLC) effect. Thus, this work as a novel strategy provides an effective mean for further development of future colossal dielectric constant materials. [ABSTRACT FROM AUTHOR]

The dielectric loss (tan δ) value of stoichiometric SrTiO 3 (ST), prepared using the solid-state reaction method, exhibits a random variation between 0.0006 and 0.01968 at room temperature and a frequency of 1 kHz in the literature. This variability makes it challenging to obtain reliable and reproducible performance for ST-based devices, especially when the underlying reasons are not yet completely understood. This work reports the significant effects of different raw materials, with various forms of TiO 2 , on the dielectric and electrical properties of ST ceramics. The results show that the purity of SrCO 3 and TiO 2 ultimately leads to distinct differences in dielectric properties, impedance properties, activation energy across the ST ceramics. Crystal comparison demonstrates that anatase TiO 2 is more suitable for dielectric applications. These results provide a reasonable explanation for the large variations in reported ST properties in the literature, which emphasizes the critical importance of selecting suitable reagents in ST-based ceramics. This insight opens up a new avenue for design optimization and highlights the promising potential of ST-based ceramics. [ABSTRACT FROM AUTHOR]

In this study, high-entropy Mg 1.8 R 0.2 Al 4 Si 5 O 18 (R Ni, Ni 1/2 Co 1/2 , Ni 1/3 Co 1/3 Zn 1/3 , Ni 1/4 Co 1/4 Zn 1/4 Cu 1/4 , Ni 1/5 Co 1/5 Zn 1/5 Cu 1/5 Mn 1/5) cordierite ceramics based on equimolar ratios were designed and synthesized through the solid-state reaction technique at high temperatures. The effect of various R-ionic substitutions at the octahedral site and their relationship with ionic polarization, chemical bonding, and configurational entropy were explored. These factors have greatly affected the microwave dielectric properties of Mg 1.8 R 0.2 Al 4 Si 5 O 18 ceramics. The presence of cation radius mismatch and electronegativity mismatch at [MgO 6 ]-octahedron lattice sites revealed lattice distortion resulting from multiple cation substitutions. As the entropy values increased, the temperature stability of microwave dielectric properties of Mg 1.8 R 0.2 Al 4 Si 5 O 18 ceramics improved. For R Ni 1/2 Co 1/2 , a higher Q×f of approximately 73,658 GHz @ 13 GHz, with ɛ r ∼4.44 and τ f ∼ −23.9 ppm/°C was obtained. In the case of R Ni 1/5 Co 1/5 Zn 1/5 Cu 1/5 Mn 1/5 , a near zero τ f (−10.7 ppm/°C), ɛ r = 4.68 and Q×f = 35,478 GHz @13 GHz were achieved, making it potentially suitable for practical applications. [ABSTRACT FROM AUTHOR]

xSrTiO 3 -(1-x)SmAlO 3 (ST-SA) (x = 0.4, 0.5, 0.6) microwave dielectric ceramics were prepared by solid-state reaction method and the microwave dielectric properties (ε r , Q × f , τ f) were studied. The 0.4ST-0.6SA component with better Q × f and τ f was selected and the effects of different ywt % Ga 2 O 3 (y = 0.5, 1.0, 1.5, 2.0, 2.5) doping on the phase structure, microstructure, and microwave dielectric properties of ceramics were investigated. X-ray diffraction analysis showed that Ga3+ mainly replaced Ti4+ site when y ≤ 0.5, and when y > 0.5, Ga3+ start to replace Al3+ site. The best grain uniformity of the ceramics was observed at y = 2.0 by scanning electron microscopy testing. Raman spectroscopy shows that the stability of the oxygen octahedron is improved after Ga 2 O 3 doping with increased Q × f value. The change of Ga 2 O 3 doping amount also affects the dielectric properties of ST-SA ceramics. The optimum Q × f value of the ceramic is improved by about 50% from 10,278 GHz (7.465 GHz, 0.4ST-0.6SA) to 15,712 GHz (6.950 GHz, 0.4ST-0.6SA-2.0 wt% Ga 2 O 3) with improved dielectric properties (ε r = 36.14， τ f = 4.17 ppm/°C). [ABSTRACT FROM AUTHOR]

The acquisition of lead-free piezoelectric films with large strain is the key factor in promoting micro-actuator development. A lead-free compound, Bi 0. 5 Na 0. 5 TiO 3 , exhibits extensive potential in achieving a large strain response and a high inverse piezoelectric coefficient. In this work, (1- x)Bi 0. 5 Na 0. 5 TiO 3 - x SrTiO 3 (BNT-100 x ST, x = 0.1, 0.2, 0.25) solid solution thin films have been prepared using the chemical solution deposition method. The dielectric nonlinearity and ferroelectric properties of BNT-ST thin films have been systematically studied to investigate the domain wall motion in the films. The most significant domain wall motion was observed in BNT-20ST thin film, in which film a large strain of 0.89 % was obtained. In addition, the relationship between structure and properties as a function of temperature was studied by the temperature-dependent dielectric properties and Raman spectra analysis. [ABSTRACT FROM AUTHOR]

A solid-state sintering process is used to fabricate Li 4 Mg 2 SbO 6 F oxyfluoride ceramics. The sintering behavior, phase structure as well as microwave dielectric performances of Li 4 Mg 2 SbO 6 F sintered bodies were studied. The phase transformation from cubic to orthorhombic occurred for Li 4 Mg 2 SbO 6 F ceramics sintered above 750 °C. The values of ɛ r, Q × f and τ f for Li 4 Mg 2 SbO 6 F ceramics were closely related to density, and configurational entropy caused by the phase transformation. The perfect microwave dielectric performances (ɛ r = 12.6, Q × f = 59,000 GHz (at 11.3 GHz), τ f = −37.0 ppm/K) could be acquired in Li 4 Mg 2 SbO 6 F ceramics following densification at 750 °C. A cylindrical dielectric resonator antenna was fabricated from the 0.15Li 4 Mg 2 SbO 6 F-0.85Li 2 SnO 3 composite ceramics with close zero τ f , which showed good performances. [ABSTRACT FROM AUTHOR]

SrLaAlO 4 -based ceramics have attracted intense interest due to their high quality factor (Qf) at high frequency. However, the poor resonant frequency temperature stability (τ f) limits their practical applications. Therefore, obtaining near-zero τ f while guaranteeing high Qf values is challenging. (Zn 0.5 Ti 0.5)3+ is utilized in Sr 0.6 Ca 0.4 LaAlO 4 ceramics to improve the τ f value effectively. The relationship between the structural features and microwave dielectric properties of Sr 0.6 Ca 0.4 LaAl 1- x (Zn 0.5 Ti 0.5) x O 4 (x = 0–0.5) ceramics has been systematically investigated by XRD, Rietveld refinement, SEM, Raman spectroscopy, TEM and P–V-L theory. XRD and Raman spectroscopy reveal the effect of (Zn 0.5 Ti 0.5)3+ substitution on the evolution of the crystal structure. According to the chemical bond theory, (Zn 0.5 Ti 0.5)3+ substitution leads to the increase of the dielectric constant, which is related to the increase of the average bond ionicity, with the La–O bond contributing predominantly to the bond ionicity. The variation of the Qf values can be attributed to the densification of the ceramics, the lattice energy of the Al/Zn/Ti–O bond, and the FWHM. The τ f value is strongly affected by the coefficient of thermal expansion of the lattice and the Al/Zn/Ti–O bond valence. It is noteworthy that excellent microwave dielectric properties are obtained for Sr 0.6 Ca 0.4 LaAl 1- x (Zn 0.5 Ti 0.5) x O 4 ceramics at x = 0.4: ε r = 21.62, Qf = 87,700 GHz (at 7.23 GHz), and τ f = −1.81 ppm/°C. The above work provides deeper insights into establishing the relationship between the K 2 NiF 4 -type crystal structure and dielectric properties from the perspective of chemical bond. [ABSTRACT FROM AUTHOR]

In this paper, different divalent ions (X = Ni, Cu, Mg, Co, Zn) are doped to replace Mg2+ at the tetrahedral sites in mixed spinel Mg 0.95 X 0.05 Al 2 O 4. These substitutions induce variations in the degree of inversion/preferential occupation at the A/B lattice site in MgAl 2 O 4 ceramics because the octahedral stabilization energies change as a function of dopant. According to crystal field theory, the number of d -orbital electrons has a significant impact on the stability of octahedral sites. Therefore, OSPE values vary between 0 Dq and 0.845 Dq for different elements. The higher the OSPE value, the greater the degree of inversion, and the higher the quality factor (Q × f). The dielectric constant (ε r) and temperature coefficient of resonant frequency (τ f) of Mg 0.95 X 0.05 Al 2 O 4 ceramics changes as a function of the ionic polarizability and B -site bond valence. Mg 0.95 Ni 0.05 Al 2 O 4 with a higher OSPE (8.45 Dq) and degree of inversion of A/B sites (λ = 0.221), has the better set of microwave dielectric properties (ε r = 8.39, Q × f = 78,338 GHz, τ f = −66.8 ppm/°C). The adjustment of stability energy of octahedral sites is favorable to improve the microwave dielectric properties of MgAl 2 O 4 spinel. [ABSTRACT FROM AUTHOR]

The Nb-doped SrTiO 3 (SNT) ceramics were prepared using the traditional solid-state reaction method. It was observed that the room temperature permittivity exhibited a significant increase from 102 to 104 as the partial pressure of oxygen in the sintering atmosphere gradually decreased. To elucidate the mechanism driving these observed changes in permittivity, the microstructure and dielectric properties of SNT ceramics were investigated. The results indicated that the presence of Ti3+/Ti4+ polar structure and the defect dipole [ Ti 4 + ∙ e − V o ∙ ∙ − Ti 4 + ∙ e ] resulted in the increase of permittivity, but only [ Ti 4 + ∙ e − V o ∙ ∙ − Ti 4 + ∙ e ] can reduce dielectric loss. The formation and concentration of these defects were influenced by the oxygen partial pressure in the sintering atmosphere, consequently influencing the alteration in the permittivity. [ABSTRACT FROM AUTHOR]

Cold sintering has proven effective in densifying microwave dielectric ceramics, but the resulting properties are significantly influenced by the crystallinity of the raw powder. In this study, lithium fluoride (LiF) raw powder underwent pre-calcination at temperatures ranging from 650 °C to 800 °C for 3 h to enhance grain crystallinity. The calcined powder was then mixed with 10 wt% deionized water and cold-sintered at 150 °C under 900 MPa for 1 h to achieve dense LiF ceramics. XRD results confirmed the preservation of LiF phase composition throughout both processes. Increasing calcination temperature exhibited a positive correlation with enhanced relative density in cold-sintered ceramics, reaching up to 98.6 % at 800 °C. SEM images revealed controlled grain growth with higher calcination temperatures. ε r increased with temperature, corresponding to the variation in relative density. Significantly, Qf value experienced substantial enhancement with increasing calcination temperature, ultimately achieving optimal microwave dielectric properties (ε r = 8.80, Qf = 33,300 GHz, and τ f = −138 ppm/°C) through cold sintering of LiF powder pre-calcinated at 800 °C. [ABSTRACT FROM AUTHOR]

Polymer dielectrics with excellent energy storage properties are crucial for high‐power density electronic equipment in environments such as high temperatures and strong electric fields. They play a critical role in applications including hybrid electric vehicles, electromagnetic launch devices, and photovoltaic power generation. In this paper, the small molecule compound lithium acetate (LiAc), which is low cost and exhibits good thermal stability in high‐temperature environments, was selected and blended with a polyetherimide (PEI) polymer matrix at an ultra‐low loading (≤0.3 vol%). LiAc has a higher electron affinity compared to PEI, which will result in a large trap energy level (Φe). The injected and excited electrons are trapped by strong electrostatic attraction, which suppresses carrier transport, reduces conduction losses, and improves breakdown strength in high‐temperature environments. This composite dielectric exhibits better energy storage properties in high‐temperature environments. The energy density of the 0.2% by volume LiAc/PEI composite dielectric reaches 3.04 J cm−3 at 150°C, maintaining an energy storage efficiency of approximately 90%. The research presented in this paper offers a novel approach to achieving excellent energy storage properties in polymer‐based composite dielectrics operating in high‐temperature environments. [ABSTRACT FROM AUTHOR]

SiBCN ceramics derived from preceramic polymers are suitable candidates for high-temperature sensors due to their remarkable high-temperature stability and semiconducting properties. However, research into their dielectric performance together with relevant sensors is meaningful but inadequate. In this work, the correlation between dielectric properties and the structure of SiBCN ceramic is identified by studying the evolution trend of the chemical composition, microstructure, and dielectric properties with pyrolysis and environment temperature. SiBCN ceramic was prepared by powder pressing process and pyrolyzed at 1000–1400 °C. As the pyrolysis temperature increased, the dielectric constant and dielectric loss tangent of SiBCN ceramic gradually increased. Within the test temperature range of 500 °C, the dielectric loss was mainly polarization loss. In addition, SiBCN ceramic wireless passive temperature sensors were prepared to test their performance from room temperature to 500 °C. The results showed that the sensitivity increased with the test temperature, and the transmission efficiency of the sensor was closely related to the dielectric properties, indicating that SiBCN ceramic has promising application prospects in the field of high-temperature sensing with good repeatability and stability. [ABSTRACT FROM AUTHOR]

Ba 1.5 Sr 0.5 Zn 2 Fe 28-x Yb x O 46 (x = 0.00, 0.07, 0.14, 0.21, and 0.28) hexaferrite were synthesized via sol-gel auto-combustion route to investigate the microwave absorption performance in different frequency bands. The structure has a single phase, and the variation in lattice parameter was observed due to Yb-content as host iron Fe3+ and substituted Yb3+ having different ionic radii. Microwave absorbing materials (MAMs) need to be lightweight, and the maximum crystallite size of prepared material is 41 nm. The physical properties vary with substitution, and the X-ray density value is higher than the bulk density, and the porosity of the prepared sample increases when the bulk density decreases. Micro-strain values are inverse to the crystallite size because Yb3+ has larger ionic radii than Fe3+. Rietveld refinement of the XRD patterns was conducted with a lower significance value. FTIR bands observed between 414 and 500 cm−1 are present due to iron-oxygen bond stretching and bending vibrations at octahedral and tetrahedral lattice sites. The cation distribution is highly responsible for the peak position of octahedral and tetrahedral sites—the dielectric constant increases with frequency because of dipole, interfacial, and electronic/atomic polarization. AC conductivity is very low, reflecting that the material can be used as a dielectric medium in the microwave frequency range's L, S, and C bands. The best MAM among all prepared materials is Ba 1.5 Sr 0.5 Zn 2 Fe 27.72 Yb 0.28 O 46 which can be used for global positioning systems, weather radar, and satellite feeds as it has an excellent dielectric loss, remarkable tangential loss, and the reflection loss in P-, L-, S-, and C-bands. Other real-life application of all prepared materials are multi-layer chip inductor and longitudinal media recording. Flowchart: Step wise synthesis procedure. [Display omitted] [ABSTRACT FROM AUTHOR]

Co-precipitation method is used to prepare Mn 2 Ba 2 Gd x Fe 12-x O 22 (0.00, 0.05, 0.10, 0.15, 0.20, and 0.25) Y-type hexaferrites. X-ray diffraction patterns reviled that prepared samples have single phase. The lattice parameters of 'a' and 'c' increases from 5.87 Å to 5.89 Å and 43.50 Å to 43.68 Å with the incorporation of Gd3+ (Gadolinium), respectively. Samples crystallite sizes were in the 88.8–201 nm range. The spectrum of FTIR explains Fe-O vibrational bands, which signifies the formation of Y-type hexaferrites. The maximum quality factor 'Q' value is obtained at 2 GHz. The maximum Q value at high frequency suggests the potential uses of prepared samples for multilayered chip inductors operating at high frequencies. A reduction in the values of saturation magnetization (M s), coercivity (H c) as well as in remanence (M r) were observed in 32.0–10.2 emu/g, 19.30–5.41 emu/g, and 3084.60–1071.3 Oe range respectively. The decrement in the squareness ratio was also found in the range of 0.594–0.529. The values of squareness ratios greater than 0.5 specify that the prepared materials have a sole magnetic domain. Due to the high coercivity of the prepared materials, these could be used in devices that use high frequencies and perpendicular recording mediums. [ABSTRACT FROM AUTHOR]

Carbon-enriched polysiloxane-derived SiOC (C-SiOC) ceramics are promising electromagnetic wave absorption (EMA) materials. However, oxidation and impedance mismatch severely deteriorate their EMA performance at high temperatures. In this study, we used polysiloxane (PSO) to encapsulate the crosslinked precursor of C-SiOC ceramics. After pyrolysis, PSO-derived SiOC-encapsulated C-SiOC (here named PSO-C-SiOC) ceramics were obtained. The PSO-C-SiOC ceramics exhibit an improved oxidation resistance compared with C-SiOC ceramics and basically retain their original dielectric and EMA properties after exposure to air at high temperatures. Moreover, the ceramics can maintain excellent EMA properties at elevated temperatures with good impedance matching. The remarkable high-temperature EMA properties of PSO-C-SiOC ceramics in air are attributed to the protective outer-layer of PSO-derived SiOC ceramic, which enhances oxidation resistance and simultaneously controls the impedance matching. These findings underscore the potential of PSO-C-SiOC ceramics as high-temperature EMA materials. [ABSTRACT FROM AUTHOR]

Ba 1– x Sr x TiO 3 (BST) ceramics are promising dielectric materials. However, their fabrication is usually laborious, requiring long preparation stages and high temperatures, which are not favorable for tuning the grain size and dielectric properties. In this study, (Ba 1– x Sr x)TiO 3 (x = 0.1, 0.3, 0.5) ceramics were produced via reactive flash sintering (RFS) of a mixture of BaCO 3 , SrCO 3 and TiO 2 powders at 900 °C and relatively short times (15–90 s). The electric field (E-field) with a strength of 400 V/cm and the current densities of 25–75 mA mm−2 were applied during RFS. Once the Sr2+ content increased, the incubation time for the RFS decreased, suggesting that the addition of Sr2+ facilitated the RFS process. At the RFS time above 15 s, a single-phase Ba 0.6 Sr 0.4 TiO 3 perovskite structure was formed. When the time and the applied current density increased, both the densities and grain sizes within the ceramics increased. This increased the real part (ε ') of the complex permittivity compared to that of the conventionally sintered (CS) ceramic. Moreover, the enhancement of mass transport by E-field-induced oxygen vacancies was considered the predominant mechanism of RFS in the production of BST ceramics. [ABSTRACT FROM AUTHOR]

Sintering temperature is decisive for optimizing the grain boundary environment to obtain the high performance ZnO based varistor ceramic. In this work, the impacts of sintering temperature on microstructure and electrical properties of ternary Zn-Sr-Co varistor were investigated. It was found that the distribution of Sr, the critical factor to form grain boundary, was heavily sensitive to sintering temperature. The considerable Sr ions precipitated at grain boundaries and formed the clusters of SrZnO 2 while the sintering temperature increases from 1150 °C to 1190 °C. Besides, the precipitation of Sr led to the large segregation of Co at grain boundaries. The enrichment behavior of Sr and Co contributed to the optimization of grain boundaries, resulting in the enhanced barrier height. As a result, the excellent nonlinear current-voltage performances, i.e., the high nonlinear coefficient of 56.47 and the low leakage current density of 0.73 μA/cm2 were obtained in the ternary ZnO-SrCO 3 -Co 2 O 3 varistor sintered at 1190 °C. However, the grain boundary environment would be destroyed by the excessive temperature of 1210 °C, resulting in the degradation of grain boundary barrier and especially a surge in the leakage current I L from 0.73 to 92.19 μA/cm2. In addition, varying sintering temperature has the important effects on impedance and dielectric properties of the ZnO-SrCO 3 -Co 2 O 3 varistors. The findings provide new perspectives for developing the high-performance ternary ZnO-SrCO 3 -Co 2 O 3 varistor ceramics by optimizing the initial grain boundary environment at different sintering temperatures. [ABSTRACT FROM AUTHOR]