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To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

To find out the effect of the rare earth doping element Holmium (Ho) on CuInS2 thin films, various studies have been carried out and the results have been reported in this paper. The PL study shows that intensity of doped film is more than undoped film. The PL emission peak appears at 570–580 nm. SEM images of CIS:Ho (4 ml) film shows agglomeration on the surface. Both synthesized film of CuInS2 appears to be amorphous in nature with chalcopyrite structure as clear from XRD. Hall measurement and optical studies were also performed. [ABSTRACT FROM AUTHOR]

This paper reported a rare earth Holmium (Ho) doped copper indium sulphide CuInS2(CIS) thin film grown by using very o economical chemical bath deposition method. Bath temperature was kept constant at 80°C. The main aim of this work is to synthesize a good photosensitive semiconducting film which can be used in photovoltaic devices like solar cells. The SEM images shows that the synthesized film is uniform, densely packed with cube like grains. X-ray diffractogram confirms chalcopyrite and wurtzite phase of CuInS. Absorption peaks are blue shifted which is due to decrease in particle size. EDAX 2 shows that synthesized film is non-stoichiometric and confirms the doping of Ho. It is found that initially transmittance is low in UV region but increases in visible region. Higher transmittance of 90% sunlight is obtained between 540-620 nm. Thus this film can be used in solar cells. Reflectance is low in the synthesized film showing that the film is anti reflection substance. The Ho doped film possesses larger band gap of 2.2 eV as compare to bulk film of CuInS which is due to reduced particle size. 2 Refractive index and extinction coefficient calculated in this film are 1.79 and 0.03 respectively. Ho doped CuInS film is quite 2 good photosensitive material. A strong emission peak is obtained at a wavelength of 630 nm in the IR region. The photoconductive gain calculated for the sample is ~2.6×104, which is quite good. [ABSTRACT FROM AUTHOR]