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Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: 'Ranish M. Ramachandran' should be 'Ranjith K. Ramachandran'.

Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga2O3 n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga2O3 n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO2-Ga2O3 n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.

Wafer-scale, conformal, two-dimensional (2D) TiO2-Ga2O3 n-p heterostructures with a thickness of less than 10 nm were fabricated on the Si/SiO2 substrates by the atomic layer deposition (ALD) technique for the first time with subsequent post-deposition annealing at a temperature of 250 °C. The best deposition parameters were established. The structure and morphology of 2D TiO2-Ga2O3 n-p heterostructures were characterized by the scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), electrochemical impedance spectroscopy (EIS), etc. 2D TiO2-Ga2O3 n-p heterostructures demonstrated efficient photocatalytic activity towards methyl orange (MO) degradation at the UV light (λ = 254 nm) irradiation. The improvement of TiO2-Ga2O3 n-p heterostructure capabilities is due to the development of the defects on Ga2O3-TiO2 interface, which were able to trap electrons faster.

In this work, three atomic layer deposition (ALD) approaches are used to deposit an Al2O3 gate insulator on n-GaN for application in vertical GaN power switches: thermal ALD (ThALD), plasma-enhanced ALD (PEALD), and their stacked combination. The latter is a novel method to yield the most ideal insulating layer. Also, the influence of an in situ NH3 or H2 plasma pre-treatment is studied. Planar MIS capacitors are used to investigate the electrical properties and robustness of the gate insulators. In vacuo x-ray photoelectron spectroscopy (XPS) is used to study the changes in chemical composition after every surface treatment. XPS shows that all plasma pre-treatments efficiently remove all carbon contamination from the surface, but only NH3 plasma is observed to additionally remove the native oxide from the n-GaN surface. The water precursor step in the ThALD process does not completely remove the CH3 ligands of the trimethylaluminum precursor step, which might electrically be associated with a reduced forward bias robustness. The O2 plasma step in the PEALD process is associated with the removal of carbon and a tremendous increase of the O content in the GaN surface region. Electrically, this strongly correlates to an enhanced forward bias robustness and an increased forward bias hysteresis, respectively. The ThALD/PEALD stack method mitigates the shortcomings of both ALD processes while maintaining its advantages. Electrical measurements indicate that the stack method alongside NH3 plasma pretreatment provides the best characteristics in terms of hysteresis, threshold voltage, forward bias robustness, and interface trap density of states. [ABSTRACT FROM AUTHOR]

Phosphorous-containing materials are used in a wide array of fields, from energy conversion and storage to heterogeneous catalysis and biomaterials. Among these materials, organic–inorganic metal phosphonate solids and thin films present an interesting option, due to their remarkable thermal and chemical stability. Yet, the synthesis of phosphonate hybrids by vapour phase thin film deposition techniques remains largely unexplored. In this work, we present successful deposition of phosphonate-containing films using dimethyl vinylphosphonate (DMVP) as a phosphonate precursor. Two processes have been studied, being a three-step process comprising alternating exposure to trimethylaluminum (TMA), water (H2O) and DMVP (ABC process), and a four-step process with an extra O3 step following the DMVP pulse (ABCD process). The O3 treatment is employed for in situ functionalisation of the adsorbed phosphonate precursor, transforming the vinyl group into a carboxylic acid end group. For both processes, good precursor saturation was found, with the ABCD process exhibiting a more stable growth per cycle (0.54–0.38 Å per cycle) in the investigated temperature range (100–250 °C). Phosphonate features were visible in FTIR spectra for both films, with the ABCD films also exhibiting a carboxylate signal. XPS showed a higher P incorporation in the ABCD films deposited at 250 °C, although still moderate (P/Al = 0.27), consistent with an alumina structure with phosphonate inclusions. The film stability upon immersion in water was tested, showing a slow oxidation over the course of a week. Finally, annealing experiments in air demonstrated stable films up to 400 °C. [ABSTRACT FROM AUTHOR]

Electric-field-controlled magnetism can boost energy efficiency in widespread applications. However, technologically, this effect is facing important challenges: mechanical failure in strain-mediated piezoelectric/magnetostrictive devices, dearth of room-temperature multiferroics, or stringent thickness limitations in electrically charged metallic films. Voltage-driven ionic motion (magneto-ionics) circumvents most of these drawbacks while exhibiting interesting magnetoelectric phenomena. Nevertheless, magneto-ionics typically requires heat treatments and multicomponent heterostructures. Here we report on the electrolyte-gated and defect-mediated O and Co transport in a Co3O4 single layer which allows for room-temperature voltage-controlled ON-OFF ferromagnetism (magnetic switch) via internal reduction/oxidation processes. Negative voltages partially reduce Co3O4 to Co (ferromagnetism: ON), resulting in graded films including Co- and O-rich areas. Positive bias oxidizes Co back to Co3O4 (paramagnetism: OFF). This electric-field-induced atomic-scale reconfiguration process is compositionally, structurally, and magnetically reversible and self-sustained, since no oxygen source other than the Co3O4 itself is required. This process could lead to electric-field-controlled device concepts for spintronics.

Metal oxide semiconductors constitute a vast group of materials whose physical properties are greatly affected by native defects. For decades, x-ray photoelectron spectroscopy (XPS) has been widely used in defect analysis. However, correct interpretation of XPS results remains a difficult task. In this work, we present a detailed first-principles study on the core-level shift of the most stable and commonly cited crystal imperfections in ZnO, including O and –OH species at the surface with different coverages and bulk defects, including O interstitial (Oi), O vacancy in the +2 charge state (Vo2+), and the neutral vacancy (Vo0). The O1s core level spectrum is simulated and compared with experiments to understand the correlation between local atomic structures and features in the O1s spectrum. In particular, our results indicate that the widely adopted assignment in the defect analysis of ZnO, which links the defect peak in XPS to Vo, the most stable defect, is very likely a misinterpretation. Theoretical analysis indicates that there are no distinguishable XPS features arising from the Vo defect. Furthermore, we show that the commonly observed defect-related peak instead arises due to Oi or specific surface configurations. Given the importance of native defects in materials performance, misinterpretation of XPS results may lead to erroneous conclusions regarding materials properties. This work provides a first-principles basis for the analysis of oxide defects through XPS. [ABSTRACT FROM AUTHOR]

The combined use of O2 and CO2 as oxidizing agents in the oxidative coupling of methane (OCM) has been assessed over two representative OCM catalysts, i. e., La−Sr/CaO and NaMnW/SiO2, under a wide range of inlet O2 and CO2 concentrations. The overall impact of CO2 was found to depend on the operating conditions and the catalyst used. At O2‐rich conditions, a negative effect of CO2 was observed on C2 selectivity. At O2‐lean conditions, a positive effect of CO2 on both catalysts was observed, likely originating from an enhanced dehydrogenation of C2H6 to C2H4 and limited deep oxidation of the involving hydrocarbons and reaction intermediates. The behavior induced by CO2 is attributed to its mild oxidizing ability and interactions with the catalysts. The enhanced dehydrogenation of C2H6 was observed and confirmed by specific tests with a CO2 and C2H6 feed. Well‐controlled CO2 addition improved the value of the OCM product mixture, mainly due to a 9 % increase in C2H4 and a 19 % increase in CO selectivity, resulting in a 25 % reduction of CO2 at the outlet over the La−Sr/CaO catalyst. These findings provide new insight into the CO2 effect on OCM and the data to translate this research into OCM process alternatives. [ABSTRACT FROM AUTHOR]

In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using patterned TLMs (Transmission Line Model) through direct laser writing lithography after locally removing the substrate and buffer layers in order to access the n+-doped backside layer. As deposited non-alloyed metal stack on top of N-polar orientation GaN layer after buffer layers removal results in poor ohmic contact quality. To significantly reduce the related specific contact resistance, an HCl treatment is applied prior to metallization under various time and temperature conditions. A 3 min HCl treatment at 70 °C is found to be the optimum condition to achieve thermally stable high ohmic contact quality. To further understand the impact of the wet treatment, SEM (Scanning Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy) analyses were performed. XPS revealed a decrease in Ga-O concentration after applying the treatment, reflecting the higher oxidation susceptibility of the N-polar face compared to the Ga-polar face, which was used as a reference. SEM images of the treated samples show the formation of pyramids on the N-face after HCl treatment, suggesting specific wet etching planes of the GaN crystal from the N-face. The size of the pyramids is time-dependent; thus, increasing the treatment duration results in larger pyramids, which explains the degradation of ohmic contact quality after prolonged high-temperature HCl treatment. [ABSTRACT FROM AUTHOR]