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3. High-performance flexible thermoelectric modules based on high crystal quality printed TiS2/hexylamine

Author

Jacob, St��phane, Delatouche, Bruno, P��r��, Daniel, Khan, Zia Ullah, Ledoux, Marc Jacques, Crispin, Xavier, and Chmielowski, Radoslaw

Abstract

Printed electronics implies the use of low-cost, scalable, printing technologies to fabricate electronic devices and circuits on flexible substrates, such as paper or plastics. The development of this new electronic is currently expanding because of the emergence of the internet-of-everything. Although lot of attention has been paid to functional inks based on organic semiconductors, another class of inks is based on nanoparticles obtained from exfoliated 2D materials, such as graphene and metal sulfides. The ultimate scientific and technological challenge is to find a strategy where the exfoliated nanoparticle flakes in the inks can, after solvent evaporation, form a solid which displays performances equal to the single crystal of the 2D material. In this context, a printed layer, formed from an ink composed of nano-flakes of TiS2 intercalated with hexylamine, which displays thermoelectric properties superior to organic intercalated TiS2 single crystals, is demonstrated for the first time. The choice of the fraction of exfoliated nano-flakes appears to be a key to the forming of a new self-organized layered material by solvent evaporation. The printed layer is an efficient n-type thermoelectric material which complements the p-type printable organic semiconductors The thermoelectric power factor of the printed TiS2/hexylamine thin films reach record values of 1460 ��W m���1 K���2 at 430 K, this is considerably higher than the high value of 900 ��W m���1 K���2 at 300 K reported for a single crystal. A printed thermoelectric generator based on eight legs of TiS2 confirms the high-power factor values by generating a power density of 16.0 W m���2 at ��T = 40 K.

Published
2021
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4. High-performance flexible thermoelectric modules based on high crystal quality printed TiS2/hexylamine

Author

Jacob, Stephane, Delatouche, Bruno, Pere, Daniel, Khan, Zia, Ledoux, Marc Jacques, Crispin, Xavier, Chmielowski, Radoslaw, Jacob, Stephane, Delatouche, Bruno, Pere, Daniel, Khan, Zia, Ledoux, Marc Jacques, Crispin, Xavier, and Chmielowski, Radoslaw

Abstract

Printed electronics implies the use of low-cost, scalable, printing technologies to fabricate electronic devices and circuits on flexible substrates, such as paper or plastics. The development of this new electronic is currently expanding because of the emergence of the internet-of-everything. Although lot of attention has been paid to functional inks based on organic semiconductors, another class of inks is based on nanoparticles obtained from exfoliated 2D materials, such as graphene and metal sulfides. The ultimate scientific and technological challenge is to find a strategy where the exfoliated nanoparticle flakes in the inks can, after solvent evaporation, form a solid which displays performances equal to the single crystal of the 2D material. In this context, a printed layer, formed from an ink composed of nano-flakes of TiS2 intercalated with hexylamine, which displays thermoelectric properties superior to organic intercalated TiS2 single crystals, is demonstrated for the first time. The choice of the fraction of exfoliated nano-flakes appears to be a key to the forming of a new self-organized layered material by solvent evaporation. The printed layer is an efficient n-type thermoelectric material which complements the p-type printable organic semiconductors The thermoelectric power factor of the printed TiS2/hexylamine thin films reach record values of 1460 mu W m(-1) K-2 at 430 K, this is considerably higher than the high value of 900 mu W m(-1) K-2 at 300 K reported for a single crystal. A printed thermoelectric generator based on eight legs of TiS2 confirms the high-power factor values by generating a power density of 16.0 W m(-2) at Delta T = 40 K., Funding Agencies|Knut och Alice Wallenbergs StiftelseKnut & Alice Wallenberg Foundation

Published
2021
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5. High-performance flexible thermoelectric modules based on high crystal quality printed TiS2/hexylamine.

Author

Jacob, Stéphane, Delatouche, Bruno, Péré, Daniel, Ullah Khan, Zia, Ledoux, Marc Jacques, Crispin, Xavier, and Chmielowski, Radoslaw

Abstract

Printed electronics implies the use of low-cost, scalable, printing technologies to fabricate electronic devices and circuits on flexible substrates, such as paper or plastics. The development of this new electronic is currently expanding because of the emergence of the internet-of-everything. Although lot of attention has been paid to functional inks based on organic semiconductors, another class of inks is based on nanoparticles obtained from exfoliated 2D materials, such as graphene and metal sulfides. The ultimate scientific and technological challenge is to find a strategy where the exfoliated nanoparticle flakes in the inks can, after solvent evaporation, form a solid which displays performances equal to the single crystal of the 2D material. In this context, a printed layer, formed from an ink composed of nano-flakes of TiS2 intercalated with hexylamine, which displays thermoelectric properties superior to organic intercalated TiS2 single crystals, is demonstrated for the first time. The choice of the fraction of exfoliated nano-flakes appears to be a key to the forming of a new self-organized layered material by solvent evaporation. The printed layer is an efficient n-type thermoelectric material which complements the p-type printable organic semiconductors The thermoelectric power factor of the printed TiS2/hexylamine thin films reach record values of 1460 µW m−1 K−2 at 430 K, this is considerably higher than the high value of 900 µW m−1 K−2 at 300 K reported for a single crystal. A printed thermoelectric generator based on eight legs of TiS2 confirms the high-power factor values by generating a power density of 16.0 W m−2 at ΔT = 40 K. [ABSTRACT FROM AUTHOR]

Published
2021
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10. Thin Film Solar Cells: Fine-Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray-Deposited Water-Ethanol-Based Colloidal Inks (Adv. Energy Mater. 24/2015)

Author

Larramona, Gerardo, primary, Levcenko, Sergiu, additional, Bourdais, Stéphane, additional, Jacob, Alain, additional, Choné, Christophe, additional, Delatouche, Bruno, additional, Moisan, Camille, additional, Just, Justus, additional, Unold, Thomas, additional, and Dennler, Gilles, additional

Published
2015
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11. 119Sn MAS NMR to Assess the Cationic Disorder and the Anionic Distribution in Sulfoselenide Cu2ZnSn(SxSe1–x)4 Compounds Prepared from Colloidal and Ceramic Routes

Author

Paris, Michaël, primary, Larramona, Gerardo, additional, Bais, Pierre, additional, Bourdais, Stéphane, additional, Lafond, Alain, additional, Choné, Christophe, additional, Guillot-Deudon, Catherine, additional, Delatouche, Bruno, additional, Moisan, Camille, additional, and Dennler, Gilles, additional

Published
2015
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12. Fine‐Tuning the Sn Content in CZTSSe Thin Films to Achieve 10.8% Solar Cell Efficiency from Spray‐Deposited Water–Ethanol‐Based Colloidal Inks

Author

Larramona, Gerardo, primary, Levcenko, Sergiu, additional, Bourdais, Stéphane, additional, Jacob, Alain, additional, Choné, Christophe, additional, Delatouche, Bruno, additional, Moisan, Camille, additional, Just, Justus, additional, Unold, Thomas, additional, and Dennler, Gilles, additional

Published
2015
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21. 119Sn MAS NMR to Assess the Cationic Disorder and the Anionic Distribution in Sulfoselenide Cu2ZnSn(SxSe1–x)4Compounds Prepared from Colloidal and Ceramic Routes

Author

Paris, Michaël, Larramona, Gerardo, Bais, Pierre, Bourdais, Stéphane, Lafond, Alain, Choné, Christophe, Guillot-Deudon, Catherine, Delatouche, Bruno, Moisan, Camille, and Dennler, Gilles

Abstract

Crystalline powders of the photovoltaic material candidate copper zinc tin sulfoselenide Cu2ZnSn(SxSe1–x)4(CZTSSe) with x= S/(S + Se) from 0 to 1 were characterized by 119Sn solid state nuclear magnetic resonance (NMR) and by powder X-ray diffraction (PXRD). Two series of powders were characterized: one synthesized by a ceramic route and having cationic stoichiometry 2:1:1 and another one synthesized by a colloidal route, having a cationic Cu-poor Zn-rich composition and used as precursors for photovoltaic active films. The homogeneous anionic composition of the samples, which is a feature needed for the NMR analysis of the anionic distribution, has been proved by PXRD. The xvalues determined from the quantitative analysis of the 119Sn spectra are in very good agreement with those deduced by PXRD. In addition, the 119Sn spectra reveal, for the first time, the random distribution of the chalcogen atoms, which seems to be a general process. Finally, a qualitative, but thorough, analysis of the line width of the 119Sn NMR spectra was undertaken to investigate the Cu/Zn cationic disorder, a feature which can seriously affect the optoelectronic properties of CZTSSe. The cationic disorder turns out to be dependent on the type of cationic composition. Indeed, regardless of xratios and the synthesis methods, our samples containing A-type defect complexes [VCu+ ZnCu] are less prone to Cu/Zn disorder.

Published
2015
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22. On Charge Carrier Recombination in Sb2S3and Its Implication for the Performance of Solar Cells

Author

Darga, Arouna, Mencaraglia, Denis, Longeaud, Christophe, Savenije, Tom J., O’Regan, Brian, Bourdais, Stéphane, Muto, Takuma, Delatouche, Bruno, and Dennler, Gilles

Abstract

Sb2S3is widely considered to be an attractive photovoltaic material based on abundant, nontoxic elements. However, the maximum efficiency reported for solar cells based on this semiconductor does not exceed 6.5%. We have measured light intensity-dependent J–Vcurves, transient microwave photoconductivity, steady-state photocurrent grating, modulated photocurrent, and photoconductivity on Sb2S3-based samples. All techniques converge toward the same observation: the main recombination route controlling the density of charge carriers in the absorber is of an order greater than one and appears to stem from an exponentially decaying density of tail states within the conduction band of the material. This conclusion has direct and drastic implications for the performance of Sb2S3-based solar cells.

Published
2013
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23. Hole Transport and Recombination in All-Solid Sb2S3-Sensitized TiO2Solar Cells Using CuSCN As Hole Transporter

Author

Boix, Pablo P., Larramona, Gerardo, Jacob, Alain, Delatouche, Bruno, Mora-Seró, Iván, and Bisquert, Juan

Abstract

All-solid semiconductor-sensitized solar cells lack models allowing their characterization in terms of the fundamental processes of charge transport and recombination. Nanostructured TiO2/Sb2S3/CuSCN solar cells were characterized by impedance spectroscopy, and a model was proposed for this type of cells. One important feature resulting from this analysis was the hole transport diffusion, which could be assimilated to a series resistance affecting the cell fill factor. The other important feature was the recombination rate, which could be described in a similar manner as other cells using nanostructured TiO2electrodes and which had an important impact on the open circuit. A simulation of the current–voltage curves using such model allowed us to get an approximate quantification of the losses caused by each process and to evaluate the possible improvements on the performance of this kind of cell.

Published
2012
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24. Strong Reduction of Thermal Conductivity and Enhanced Thermoelectric Properties in CoSbS1-xSex Paracostibite.

Author

Chmielowski, Radoslaw, Bhattacharya, Sandip, Jacob, Stéphane, Péré, Daniel, Jacob, Alain, Moriya, Kenzo, Delatouche, Bruno, Roussel, Pascal, Madsen, Georg, and Dennler, Gilles

Abstract

In order to reduce the thermal conductivity of CoSbS, a newly developed thermoelectric semiconductor, we have aimed at intentionally induce atomic disorder in its structure. This endeavor was guided by Density Functional Theory(DFT) calculations which indicated that substituting sulfur with selenium might be easily achievable experimentally because of the low formation energy of this point defect. Thereby, CoSbS1−xSex compounds having 0 ≤ x ≤ 1 have been synthesized by solid state reaction. Besides the expected semiconducting paracostibite phase, we have observed the appearance of a semimetallic costibite phase, never reported experimentally before. This cross-fertilized theoretical and experimental approach allowed us to reduce by 50% the thermal conductivity of paracostibite and therefore reach a maximum zT of 0.62 at 730 K. This makes this entirely new CoSbS1−xSex alloy very attractive for further optimizations and potential usage in thermoelectric applications. [ABSTRACT FROM AUTHOR]

Published
2017
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25. Strong Reduction of Thermal Conductivity and Enhanced Thermoelectric Properties in CoSbS 1-x Se x Paracostibite.

Author

Chmielowski R, Bhattacharya S, Jacob S, Péré D, Jacob A, Moriya K, Delatouche B, Roussel P, Madsen G, and Dennler G

Abstract

In order to reduce the thermal conductivity of CoSbS, a newly developed thermoelectric semiconductor, we have aimed at intentionally induce atomic disorder in its structure. This endeavor was guided by Density Functional Theory(DFT) calculations which indicated that substituting sulfur with selenium might be easily achievable experimentally because of the low formation energy of this point defect. Thereby, CoSbS 1-x Se x compounds having 0 ≤ x ≤ 1 have been synthesized by solid state reaction. Besides the expected semiconducting paracostibite phase, we have observed the appearance of a semimetallic costibite phase, never reported experimentally before. This cross-fertilized theoretical and experimental approach allowed us to reduce by 50% the thermal conductivity of paracostibite and therefore reach a maximum zT of 0.62 at 730 K. This makes this entirely new CoSbS 1-x Se x alloy very attractive for further optimizations and potential usage in thermoelectric applications.

Published
2017
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