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Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron spins. We expect that oxygen vacancies play a significant role in these films and lead to a complex magnetic field distribution which is non-stationary. The characteristic average rate of magnetic field change is on the order of 100~MHz. The observed dynamics may provide insight into potential noise sources in Nb-based superconducting devices, while also highlighting the limitations imposed by amorphous oxides., Comment: 8 pages, 7 figures

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{\mu s}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.

The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $\mu \approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{\mu V}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

The magnetic moment of a quantum dot can be screened by its coupling to a superconducting reservoir, depending on the hierarchy of the superconducting gap and the relevant Kondo scale. This screening-unscreening transition can be driven by electrostatic gating, tunnel coupling, and, as we demonstrate here, magnetic field. We perform high-resolution spectroscopy of subgap excitations near the screening-unscreening transition of asymmetric superconductor - quantum dot - superconductor (S-QD-S) junctions formed by the electromigration technique. Our measurements reveal a re-entrant phase boundary determined by the competition between Zeeman energy and gap reduction with magnetic field. We further track the evolution of the phase transition with increasing temperature, which is also evidenced by thermal replicas of subgap states., Comment: 15 pages, including Supp. Info. file

We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates electron turnstile operation. Compared to the more conventional superconductor - normal metal - superconductor turnstile, our SQS device presents a number of novel properties, including higher immunity to the unavoidable presence of non-equilibrium quasiparticles in superconducting leads. In addition, we demonstrate its ability to deliver electrons with a very narrow energy distribution.

Electron transport through a quantum dot coupled to superconducting leads shows a sharp conductance onset when a quantum dot orbital level crosses the superconducting coherence peak of one lead. We study superconducting single electron transistors in the weak coupling limit by connecting individual gold nanoparticles with aluminum junctions formed by electromigration. We show that the transport features close to the conductance onset threshold can be accurately described by the quantum dot levels' hybridization with the leads, which is strongly enhanced by the divergent density of states at the superconducting gap edge. This highlights the importance of electron cotunneling effects in spectroscopies with superconducting probes.