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Most accelerometers today are based on the capacitive principle. However, further miniaturization for micro integration of those sensors leads to a poorer signal-to-noise ratio due to a small total area of the capacitor plates. Thus, other transducer principles should be taken into account to develop smaller sensors. This paper presents the development and realization of a miniaturized accelerometer based on the tunneling effect, whereas its highly sensitive effect regarding the tunneling distance is used to detect small deflections in the range of sub-nm. The spring-mass-system is manufactured by a surface micro-machining foundry process. The area of the shown polysilicon (PolySi) sensor structures has a size smaller than 100 µm × 50 µm (L × W). The tunneling electrodes are placed and patterned by a focused ion beam (FIB) and gas injection system (GIS) with MeCpPtMe3 as a precursor. A dual-beam system enables maximum flexibility for post-processing of the spring-mass-system and patterning of sharp tips with radii in the range of a few nm and initial distances between the electrodes of about 30–300 nm. The use of metal–organic precursor material platinum carbon (PtC) limits the tunneling currents to about 150 pA due to the high inherent resistance. The measuring range is set to 20 g. The sensitivity of the sensor signal, which depends exponentially on the electrode distance due to the tunneling effect, ranges from 0.4 pA/g at 0 g in the sensor operational point up to 20.9 pA/g at 20 g. The acceleration-equivalent thermal noise amplitude is calculated to be 2.4–3.4 mg/Hz. Electrostatic actuators are used to lead the electrodes in distances where direct quantum tunneling occurs.

Most accelerometers today are based on the capacitive principle. However, further miniaturization for micro integration of those sensors leads to a poorer signal-to-noise ratio due to a small total area of the capacitor plates. Thus, other transducer principles should be taken into account to develop smaller sensors. This paper presents the development and realization of a miniaturized accelerometer based on the tunneling effect, whereas its highly sensitive effect regarding the tunneling distance is used to detect small deflections in the range of sub-nm. The spring-mass-system is manufactured by a surface micro-machining foundry process. The area of the shown polysilicon (PolySi) sensor structures has a size smaller than 100 µm × 50 µm (L × W). The tunneling electrodes are placed and patterned by a focused ion beam (FIB) and gas injection system (GIS) with MeCpPtMe3 as a precursor. A dual-beam system enables maximum flexibility for post-processing of the spring-mass-system and patterning of sharp tips with radii in the range of a few nm and initial distances between the electrodes of about 30–300 nm. The use of metal–organic precursor material platinum carbon (PtC) limits the tunneling currents to about 150 pA due to the high inherent resistance. The measuring range is set to 20 g. The sensitivity of the sensor signal, which depends exponentially on the electrode distance due to the tunneling effect, ranges from 0.4 pA/g at 0 g in the sensor operational point up to 20.9 pA/g at 20 g. The acceleration-equivalent thermal noise amplitude is calculated to be 2.4–3.4 mg/ H z . Electrostatic actuators are used to lead the electrodes in distances where direct quantum tunneling occurs. [ABSTRACT FROM AUTHOR]