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Our previous report based on a 10 g (gravity) silicon-based inertial micro-switch showed that the contact effect between the two electrodes can be improved by squeeze-film damping. As an extended study toward its potential applications, the switch with a large proof mass suspended by four flexible serpentine springs was redesigned to achieve 5 g threshold value and enhanced threshold accuracy. The impact of the squeeze-film damping on the threshold value was theoretically studied. The theoretical results show that the threshold variation from the designed value due to fabrication errors can be reduced by optimizing the device thickness (the thickness of the proof mass and springs) and then establishing a tradeoff between the damping and elastic forces, thus improving the threshold accuracy. The design strategy was verified by FEM (finite-element-method) simulation and an experimental test. The simulation results show that the maximum threshold deviation was only 0.15 g, when the device thickness variation range was 16⁻24 μm, which is an adequately wide latitude for the current bulk silicon micromachining technology. The measured threshold values were 4.9⁻5.8 g and the device thicknesses were 18.2⁻22.5 μm, agreeing well with the simulation results. The measured contact time was 50 μs which is also in good agreement with our previous work.

Inertial micro-switches have great potential in the applications of acceleration sensing, due to the integrated advantages of a small size, high integration level, and low or even no power consumption. This paper presents an overview of the recent advancements made in research on the sensitive direction, threshold acceleration, contact effect, and threshold accuracy of inertial micro-switches. The reviewed switches were categorized according to the performance parameters, including multi-directional switches, multi-threshold switches, persistent closed switches, flexible-electrode switches, and low-g high-threshold-accuracy switches. The current challenges and prospects are also discussed. [ABSTRACT FROM AUTHOR]

Our previous report based on a 10 g (gravity) silicon-based inertial micro-switch showed that the contact effect between the two electrodes can be improved by squeeze-film damping. As an extended study toward its potential applications, the switch with a large proof mass suspended by four flexible serpentine springs was redesigned to achieve 5 g threshold value and enhanced threshold accuracy. The impact of the squeeze-film damping on the threshold value was theoretically studied. The theoretical results show that the threshold variation from the designed value due to fabrication errors can be reduced by optimizing the device thickness (the thickness of the proof mass and springs) and then establishing a tradeoff between the damping and elastic forces, thus improving the threshold accuracy. The design strategy was verified by FEM (finite-element-method) simulation and an experimental test. The simulation results show that the maximum threshold deviation was only 0.15 g, when the device thickness variation range was 16–24 μm, which is an adequately wide latitude for the current bulk silicon micromachining technology. The measured threshold values were 4.9–5.8 g and the device thicknesses were 18.2–22.5 μm, agreeing well with the simulation results. The measured contact time was 50 μs which is also in good agreement with our previous work. [ABSTRACT FROM AUTHOR]