[Display omitted] • We demonstrate a single-step process approach to fabricate disordered pyramidal nanostructures for large-scale broadband visible light absorber. Utilizing physical vapor deposition technology, the absorber consisting of a single layer of refractory metal (chromium) film is fabricated on 4-inch silicon (Si) wafer. The fabrication of the disordered pyramidal nanostructures is quite facile, low-cost, and compatible with mass production and CMOS process. • Benefiting from disordered pyramid nanostructures with distributed rough texture and gaps, this absorber achieves beyond 90% absorption in the range of 300 to 850 nm. Compared to the chromium film without pyramid nanostructures, it not only improves the absorption by more than 80%, but also obtains a more uniform absorption with relative absorption bandwidth (RAB) of 96.3%. Since the Cr is a refractory metal with high melting points (2180 K), the proposed absorber is extraordinarily resistant to heat which makes it a great candidate in solar absorbers for high-temperature photothermal conversion. • An improved three-dimensional finite element model is developed that is capable of simulating disordered pyramidal nanostructures with appropriate simplification. This model provides more insights into broadband absorption mechanism and can be used to predict optical performance for other disordered nanostructures. While the advances in material science have led to excellent absorption and bandwidth for visible light absorbers, the sophisticated and time-consuming fabrication in micro and nano scales makes it the bottleneck of large-scale manufacturing. Without complex structural patterning, an absorber consisting of a single layer of chromium film is fabricated on a 4-inch silicon wafer by single-step physical vapor deposition. Benefiting from disordered pyramidal nanostructures, this absorber achieves beyond 90% absorption in the range of 300 to 850 nm. Compared to the chromium film without nanostructures, it improves the absorption by more than 80%, and obtains a more uniform absorption with relative absorption bandwidth (RAB) of 96.3%. Simulated results demonstrate the excellent absorption is attributed to numerous disordered pyramidal nanostructures with rough texture and random gaps. This absorber shows the great potential of broadband absorption with angle insensitivity in visible region and sustainable light capture at high temperatures, and its fabrication is facile, low-cost, and compatible with mass production and CMOS process. [ABSTRACT FROM AUTHOR]