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3 results on '"thermalization coefficient"'

1. Study of Thermalization Mechanisms of Hot Carriers in BABr-Added MAPbBr 3 for the Top Layer of Four-Junction Solar Cells.

Author

Zhang, Yi, Chen, Huilong, Qu, Junfeng, Zhang, Jiayu, and Conibeer, Gavin

Subjects
*SOLAR cell efficiency, *SOLAR cells, *SURFACE defects, *PASSIVATION, *PEROVSKITE, *HOT carriers, *QUANTUM dots
Abstract

The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Qth) has been shown to slow down by an order of magnitude in low-dimensional structures, which will significantly improve PCE. However, there have been no studies calculating the Qth of MAPbBr3 quantum dots so far. In this work, the Qth values of MAPbBr3 quantum dots and after BABr addition were calculated based on power-dependent steady-state photoluminescence (PD-SSPL). Their peak positions in PD-SSPL increased from 2.37 to 2.71 eV after adding BABr. The fitting shows that, after adding BABr, the Qth decreased from 2.64 ± 0.29 mW·K−1·cm−2 to 2.36 ± 0.25 mW·K−1·cm−2, indicating a lower relaxation rate. This is because BABr passivates surface defects, slowing down the carrier thermalization process. This work lays the foundation for the theoretical framework combining perovskite materials, which suggests that the appropriate passivation of BABr has the potential to further reduce Qth and make MAPbBr3 QDs with BABr modified more suitable as the top absorption layer of HCMJCs. [ABSTRACT FROM AUTHOR]

Published
2024
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2. Impact of excitation energy on hot carrier properties in InGaAs multi‐quantum well structure.

Author

Esmaielpour, Hamidreza, Lombez, Laurent, Giteau, Maxime, Guillemoles, Jean‐François, and Suchet, Daniel

Subjects
HOT carriers, INDIUM gallium arsenide, ENERGY dissipation, NANOSTRUCTURED materials, CARRIER density, SOLAR energy, PHONON scattering
Abstract

Hot carrier solar cells aim to overcome the theoretical limit of single‐junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion of energy loss in solar cells, it is still one of the least understood phenomena in semiconductors. Here, the impact of excitation energy on the properties of photo‐generated hot carriers in an InGaAs multi‐quantum well (MQW) structure at various lattice temperatures and excitation powers is studied. Photoluminescence (PL) emission of the sample is detected by a hyperspectral luminescence imager, which creates spectrally and spatially resolved PL maps. The thermodynamic properties of hot carriers, such as temperature and quasi‐Fermi‐level splitting, are carefully determined via applying full PL spectrum fitting, which solves the Fermi–Dirac integral and considers the band‐filling effect in the nanostructured material. In addition, the impact of thermalized power density and carrier scattering with longitudinal optical phonons on the spectral linewidth broadening under two excitation energies is studied. [ABSTRACT FROM AUTHOR]

Published
2022
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3. Impact of excitation energy on hot carrier properties in InGaAs MQW structure

Author

Hamidreza Esmaielpour, Laurent Lombez, Maxime Giteau, Jean-François Guillemoles, Daniel Suchet, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Research Center for Advanced Science and Technology [Tokyo] (RCAST), The University of Tokyo (UTokyo), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), and EDF (EDF)-EDF (EDF)

Subjects
Condensed Matter::Materials Science, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], full spectrum fit, band-filling, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, FOS: Physical sciences, Applied Physics (physics.app-ph), Physics - Applied Physics, thermalization coefficient, hot carriers, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, carrier temperature
Abstract

Hot carrier solar cells aim to overcome the theoretical limit of single-junction photovoltaic devices by suppressing the thermalization of hot carriers and extracting them through energy selective contacts. Designing efficient hot carrier absorbers requires further investigation on hot carrier properties in materials. Although the thermalization of hot carriers is responsible for a large portion of energy loss in solar cells, it is still one of the least understood phenomena in semiconductors. Here, the impact of excitation energy on the properties of photo-generated hot carriers in an InGaAs multi-quantum well (MQW) structure at various lattice temperatures and excitation powers is studied. Photoluminescence (PL) emission of the sample is detected by a hyperspectral luminescence imager, which creates spectrally and spatially resolved PL maps. The thermodynamic properties of hot carriers, such as temperature and quasi-Fermi level splitting, are carefully determined via applying full PL spectrum fitting, which solves the Fermi-Dirac integral and considers the band-filling effect in the nanostructured material. In addition, the impact of thermalized power density and carrier scattering with longitudinal optical phonons on the spectral linewidth broadening under two excitation energies is studied., 20 pages, 14 figures

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