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Background. Most pathologies of the human body (in particular, malignant neoplasms, myocardial hypoxia, liver diseases, etc.) are accompanied by a violation of the integrity of cells in target tissues and the release of intracellular macromolecules into the extracellular environment. Thus, an important diagnostic and prognostic indicator is the level of activity of certain enzymes in blood serum, which are normally intracellular. One of the most promising areas of modern medical electronics and biophysics is the development and optimization of enzyme screening methods in biological fluids. In this study, we aimed to investigate the biophysical characteristics of using a recombination sensor for determining LDH activity in biological fluids. Materials and Methods. Experiments were performed on preparations of standard human blood serum. The reference determination of lactate dehydrogenase activity was carried out photometrically based on the change (decrease) in the concentration of the reduced form of the NADH coenzyme. The passage of the lactate dehydrogenase reaction was experimentally recorded by measuring the photocurrent of a silicon structure with a buried barrier under light irradiation from the region of strong absorption (λ = 532 nm). Results. The biophysical features of the device were studied. The detection of lactate dehydrogenase becomes possible due to the transfer of a hydrogen ion from nicotinamide adenine dinucleotide (NADH) to pyruvate, as a result of which lactate and NAD+ are formed. The effect is explained by the local electrostatic influence on the parameters of the recombination centers in the near-surface bending zone near the silicon surface, which leads to a change in the surface recombination rate. Conclusions. Our approach can be considered as a promising way to develop a highly sensitive method for the detection of lactate dehydrogenase. It has been experi­mentally shown that effective detection is possible in two changes at the surface ben­ding of the deep barrier silicon substrate zone.

The effects of surface recombination on the steady-state carrier profiles and photocurrent in perovskite solar cells are investigated in this paper. The continuity equations for both holes and electrons are solved considering carrier drift and diffusion under the exponential carrier generation profile in the perovskite layer and considering both bulk and interface carrier recombination. An analytical expression for the solar-induced photocurrent is derived. The rate of carrier recombination at the interfaces has a very significant effect on the carrier profile, photocurrent, and, hence, on the charge collection efficiency. The external current density is calculated considering the dark current and nominal solar spectrum-induced photocurrent. The proposed model is fitted and verified with published experimental results from various publications. The fittings of the model with experimental results provide information about the interface and bulk charge carrier transport parameters. [ABSTRACT FROM AUTHOR]

Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication and large-scale application of light-based sensing devices in healthcare and automotive; by some, it is considered the Holy Grail of silicon photonics. The monolithic integration is, however, severely hampered by the inability of Si to efficiently emit light. Recently, important progress has been made by the demonstration of efficient light emission from direct-bandgap hexagonal SiGe (hex-SiGe) alloy nanowires. For this promising material, realized by employing a nanowire structure, many challenges and open questions remain before a large-scale application can be realized. Considering that for other direct-bandgap materials like GaAs, surface recombination can be a true bottleneck, one of the open questions is the importance of surface recombination for the photoluminescence efficiency of this new material. In this work, temperature-dependent photoluminescence measurements were performed on both hex-Ge and hex-SiGe nanowires with and without surface passivation schemes that have been well documented and proven effective on cubic silicon and germanium to elucidate whether and to what extent the internal quantum efficiency (IQE) of the wires can be improved. Additionally, time-resolved photoluminescence (TRPL) measurements were performed on unpassivated hex-SiGe nanowires as a function of their diameter. The dependence of the surface recombination on the SiGe composition could, however, not be yet addressed given the sample-to-sample variations of the state-of-the-art hex-SiGe nanowires. With the aforementioned experiments, we demonstrate that at room temperature, under high excitation conditions (a few kW cm–2), the hex-(Si)Ge surface is most likely not a bottleneck for efficient radiative emission under relatively high excitation conditions. This is an important asset for future hex-(Si)Ge optoelectronic devices, specifically for nanolasers. [ABSTRACT FROM AUTHOR]

Currently Cadmium Telluride (CdTe) is a promising and potential absorber material to use in solar cell due to reliable cost and highly efficient solar cell. In this work, amorphous silicon (a-Si) as hole transport layer (HTL) has been introduced in the middle of CdTe absorber and back contact to design the solar cell. Various parameters of materials are varied to enhance the performance of the CdTe absorber-based solar cell using SCAPS-1D. We have studied impact of thickness, defect density of CdTe, surface recombination velocity at CdTe absorber/HTL interface and acceptor concentration of CdTe on performance of solar cell. Some factors such as shunt resistance (Rsh) and series resistance (Rs) and work function of metal contacts has also been investigated. The highest power conversion efficiency (PCE) 27.98% is achieved with open circuit voltage (Voc) of 1.12 V, short circuit current density (Jsc) of 29.04 mA/cm2 and fill factor (FF) of 85.85% at the thickness of 2000 nm. This work shows that the proposed CdTe solar cell with a-Si HTL provides better performance as compare to conventional CdTe solar cell. [ABSTRACT FROM AUTHOR]

The effects of surface recombination on the steady-state carrier profiles and photocurrent in perovskite solar cells are investigated in this paper. The continuity equations for both holes and electrons are solved considering carrier drift and diffusion under the exponential carrier generation profile in the perovskite layer and considering both bulk and interface carrier recombination. An analytical expression for the solar-induced photocurrent is derived. The rate of carrier recombination at the interfaces has a very significant effect on the carrier profile, photocurrent, and, hence, on the charge collection efficiency. The external current density is calculated considering the dark current and nominal solar spectrum-induced photocurrent. The proposed model is fitted and verified with published experimental results from various publications. The fittings of the model with experimental results provide information about the interface and bulk charge carrier transport parameters.

An investigation on enhanced surface passivation in the existing industrial process line of large area n -type silicon (Si) Passivated Emitter Rear Totally diffused (n - PERT) solar cell has been performed. The Rapid Thermal Process (RTP) optimization for 20 min is conducted in the temperature range of 500–900°C and device evaluation is carried out with respect to regularly processed n -PERT solar cell. The impact of pre-metallization annealing is studied with the support of cell parameters like shunt resistance, reverse saturation current density determined from current-voltage measurements. The enhanced surface passivation via hydrogenation from silicon nitride (SiNx) layer during annealing is established with the help of external quantum efficiency, spectral response measurements and Fourier transform infrared spectroscopy analysis. The addition of optimized annealing resulted in improvement by 550% (from 38 to 247 µs), 7.73% (from 630.7 to 678.8 mV) and 84.77% (from 223.3 to 34 cm/s) in effective minority carrier lifetime, implied open circuit voltage and surface recombination velocity respectively. Finally, RTP technique for optimized process line has been successfully incorporated in industrial high-volume batch of 140898 CZ n-type Si wafers, which predicts conceptual validation of the study in mass scale production line with an increment in average efficiency of the device by 0.35%. [ABSTRACT FROM AUTHOR]

Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

Background. The development of highly sensitive sensor equipment with the possibility of registering analytes in real time is a fast growing research area and a promising diagnostic biomedical technology. Currently, the standard laboratory method for determining the activities of ATPses is an indirect spectroscopic study of the concentration of inorganic phosphate formed as a result of ATP hydrolysis by these enzymes. However, there is no commercially available phosphate sensor with satisfactory parameters of sensitivity, selectivity and stability over time. The purpose of our research was the deve­lopment of a photoelectric recombination sensor system for the real-time detection of biochemical markers and its testing on the example of screening ATPase activity of rat erythrocyte plasma membrane suspension preparations. Materials and Methods. Experiments were performed on suspension preparations of plasma membranes of erythrocytes of Wistar rats. Preparations of plasma membrane suspensions obtained by Dodge method from each animal were divided into aliquots and used for the simultaneous study of ATPase activity by the reference method of Rathbun & Betlach, as well as the registration of photocurrents induced during the passage of the ATPase reaction using the photoelectric recombination multisensor system of our own design. Results. The application of silicon sensory structures based on photoelectrical transducer principle for detecting the activity of adenosine triphosphate hydrolases on the example of total Mg2+,Na+,K+-ATPases preparations of plasma membranes of rat erythro­cytes has been experimentally tested. The directly measured analytic parameter is the photocurrent of the deep silicon barrier structure under illumination with high absorption coefficient. The physical features of the device operation have been examined. Detection of such metabolites becomes possible due to reactions intermediates with their own dipole moment (inorganic phosphate, which is one of the products of ATP hydrolysis). The drastic change of photocurrent that characterizes the course of biochemical reaction was observed in real time. The effect is explained by local electrostatic influence on the parameters of recombination centers at the silicon surface that results in surface recombination velocity change. The sensor operation is qualitatively explained in the frame of Stevenson-Keyes’s theory. Conclusions. Our approach can be regarded as a promising way to elaborate technically simple and highly sensitive method for detection of quantitative behavior of enzymatic reactions. Moreover, the local modification of silicon surface allows obtaining time depending scenarios of the adsorption and thus improving the sensitivity of the sensor. These circumstances open up the possibility of elaborating the complex sensory structures with optimized parameters for certain enzymatic reactions.

We demonstrate highly efficient submicron scale nanorod LEDs (nLEDs) passivated by the triple dielectric layers. The diameter, length, and wavelength at a peak EQE of nLEDs are 580nm, 5¼m, and 460nm, respectively. We report a peak EQE of 22.15 ± 0.34% with HfO2 based triple dielectric layer. We also explore the relation of indium‐fluctuation in multi quantum wells (MQWs) to sidewall effect of micro LEDs. We show that higher indium content in MQWs successfully reduce non‐radiative recombination on sidewall of InGaN blue nLEDs. [ABSTRACT FROM AUTHOR]

The behavior of hole polarons in β -gallium oxide (Ga2O3) has attracted significant attention. Depth-resolved cathodoluminescence (CL) was used to investigate the minority carrier dynamics in β -Ga2O3. First, a model describing CL intensity was proposed by considering the depth-dose function and surface recombination. A universal depth-dose function for β -Ga2O3, which has the form of a third-degree polynomial, was presented based on Monte Carlo simulation by introducing a normalized depth, which is the depth normalized by the electron beam range. Second, two experimental approaches, plan-view and cross-sectional CL measurements, were applied to unintentionally doped β -Ga2O3 (âˆ'201) wafers, and the experimental results were compared with those of the proposed model. The hole diffusion length was estimated to be within the range of 200â€"400 nm through the plan-view measurement, whereas a hole diffusion length of 250 nm was obtained through the cross-sectional measurement. The values were consistent with each other, and the model reproduced the experimental results well. This indicates that the nonequilibrium minority hole in the unintentionally doped β -Ga2O3 is mobile and forms a ‘weak’ polaron. The reduced recombination velocity of the (âˆ'201) face was estimated to be approximately ten for the plan-view measurement, whereas that of ten or more was assumed for the cross-sectional measurement. No inconsistency was observed, but the low-energy plan-view measurement is considered more suitable for investigating the surface recombination velocity. [ABSTRACT FROM AUTHOR]

The electrical and passivation properties of alumina layers deposited by the atomic layer deposition (ALD) technique with different precursors at different temperatures are analyzed. Herein, a significantly larger density of the negative fixed charge in alumina layers deposited with ozone in comparison to those prepared with water is observed. A part of this negative charge can be successfully removed by the annealing of the samples already at around 250 °C and this negative charge is tentatively ascribed to oxygen interstitials. The effective surface recombination velocity (seff) is below 2 cm s−1 in all as‐deposited alumina layers independent of the deposition conditions and it is significantly smaller in layers prepared with water. The higher seff in films prepared with ozone can be explained by the higher density of the interface states in these samples as obtained from impedance measurements performed at different ac frequencies and at different biases. The conduction mechanisms in alumina films are also investigated and their difference is discussed. [ABSTRACT FROM AUTHOR]

Isolating the effects of the type and concentration of the dopant in lightly doped regions in the reaction between hydrogen-terminated silicon surface and atmospheric impurities in air is very difficult. However, changes in the surface recombination sites can be analyzed accurately through recombination lifetime measurements performed using the microwave photoconductive decay method. Thus, we investigated variations in the effective recombination lifetime in hydrogen-terminated silicon surfaces over time in air for different dopant types and concentrations. For both p-type and n-type silicon wafers, surface recombination velocity, S, increased with decreasing resistivity, namely, increasing dopant concentration. The time-dependent variations of the S for the p-type wafers decreased, and those for the n-type wafers increased with decreasing resistivity. Thus, it was shown that the time-dependent variation of the S depends on the type and concentration of the dopant used. [ABSTRACT FROM AUTHOR]

Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.

• The CdTe surface was passivated by the sputtered Al 2 O 3 and V 2 O 5 layers. • The minority carrier lifetime of the CdTe covered with Al 2 O 3 and V 2 O 5 was increased. • There exsits negative fixed charges in V 2 O 5 and Al 2 O 3. • The passivation was ascribed to the electric field effect. In this study, three kinds of metal oxide (MOs), namely, V 2 O 5 , Al 2 O 3 and NiO, were deposited on CdTe thin films to study possible passivation effect on the CdTe surface. Time-resolved photoluminescence (TRPL) measurements were carried out to study the minority carrier lifetime of the MO-coated CdTe and bare CdTe. The results showed that the TRPL decay curves were consisted of a fast and a slow decay process for all samples. For both the bare and NiO-coated CdTe surface, the fast and the slow decay lifetimes were found to be 0.5 and 1.0 ns. While for the Al 2 O 3 - and V 2 O 5 -coated CdTe, the fast decay lifetime was 0.6 and 0.7 ns, and the slow decay lifetime was 2.1 and 2.4 ns, respectively. CdTe surface defect states with high surface recombination velocity, ~106 cm/s, were responsible for the fast decay. The CdTe surface was effectively passivated by a 3-nm-thick V 2 O 5 or Al 2 O 3 coating layer. The simulation and experimental results indicated that the passivation was ascribed to the electric field effect induced by negative fixed charges in V 2 O 5 and Al 2 O 3. [ABSTRACT FROM AUTHOR]

In various types of organic/inorganic solar cells, optical response enhancement is consistently observed within the external quantum efficiency spectra owing to the improvement in interface passivation and the suppression of carrier recombination. In this study, we focused on crystalline silicon solar cells and systematically investigated the impact of interface recombination on the optical response upon dual-side illumination using numerical simulations. The results shed light on the interesting phenomenon that the surface recombination velocity has a significant impact on the external quantum efficiency, and it changes as the illumination direction changes. Moreover, from a practical perspective, the spectra of external quantum efficiency under dual-side illumination conditions can act as a powerful tool for the quick diagnosis of the passivation quality at the top and bottom interfaces. • Numerical simulations were conducted to understand the mechanism behind spectrally dependent surface recombination in silicon solar cells. • Suppressing carrier recombination at the high-low junction interface enhances the optical response across the entire wavelength range upon illumination from the high-low junction side. • Optical response enhancement only occurs in the long-wavelength range by decreasing the surface recombination velocity at the high-low junction interface upon illumination from the p-n junction side. • The spectra of external quantum efficiency under dual-side illumination conditions can act as a powerful tool for the quick diagnosis of the passivation quality at the top and bottom interfaces. [ABSTRACT FROM AUTHOR]

Thermally grown SiO2 is widely used for silicon surface passivation in solar cells and other applications due to excellent interfacial properties. SiO2 films with thickness in the range of 17 nm deposited by industrially viable spray-coating technique on both n- and p-type silicon are reported. Low values of interface state density of 1.4 × 1010 cm−2 eV−1 on n-type and 2.0 × 1010 cm−2 eV−1 on p-type were achieved. Fixed oxide charges in the range of 7.1– 9.4 × 1011 cm−2 and 3.9– 6.5 × 1011 cm−2 on n- and p-type, respectively, are obtained. Excellent passivation results in the effective surface recombination velocity of 0.97 cms−1 and 8.07 cms−1 at minority carrier concentration of 1015 cm−3 on n- and p-type Czochralski silicon, respectively, without the use of capping layer. SiO2 film exhibits dielectric breakdown field strength of 4.3 MV cm−1 and 5.6 MV cm−1 and leakage current density of 2.2 × 10−8 A cm−2 and 1.1 × 10−8 A cm−2 at 1 MV cm−1 on n- and p-type silicon, respectively. These values are superior to sol-gel-based SiO2 films reported previously and are comparable to or better than those reported for other methods for the growth or deposition of SiO2 on silicon. Amorphous nature of the film is validated by high-resolution transmission electron microscopy (TEM). The X-ray photoelectron spectroscopy (XPS) analysis shows nearly stoichiometric SiOx film. [ABSTRACT FROM AUTHOR]

The junction properties at the solution-processed titanium dioxide (TiO2)/n-type crystalline Si(n-Si) interface were studied for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/n-Si heterojunction solar cells by the steady-state photovoltaic performance and transient reverse recovery characterizations. The power conversion efficiency could be increased from 11.23% to 13.08% by adjusting the layer thickness of TiO2 together with increasing open-circuit voltage and suppressed dark saturation current density. These findings originate from the enhancement of the carrier collection efficiency at the n-Si/cathode interface. The transient reverse recovery characterization revealed that the surface recombination velocity S was ∼375 cm/s for double TiO2 interlayer of ∼2 nm thickness. This value was almost the same as that determined by microwave photoconductance decay measurement. These findings suggest that solution-processed TiO2 has potential as a hole blocking layer for the crystalline Si photovoltaics. [ABSTRACT FROM AUTHOR]

Transition metal oxides (TMOs) as passivating carrier-selective contact layers are investigated for silicon heterojunction solar cells. MoOx as hole-selective layer and TiOx as an electron-selective layer are explored in detail to design a high-efficiency silicon heterojunction solar cell without any specified surface passivation layer. The thickness and optical transparency of the MoOx hole-selective layer have been evaluated through optical simulation. The impact of TMOs' work function and their passivation quality has been examined in detail to extract the maximum conversion efficiency from silicon heterojunction solar cells. To increase the optical absorption in c-Si, the micro–nanopillar structure has also been implemented. It has been found that the barrier height at the TMO/silicon heterocontact plays a significant role in the overall performance improvement of the solar cell. The optimized cell design without doping and separate passivating layer can achieve a power conversion efficiency of ~ 22%. Our findings open the potential pathways and opportunities to obtain simplified heterojunction solar cells at lower temperatures and without impurity doping. [ABSTRACT FROM AUTHOR]

Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cells’ growth in the energy market. In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software. Inferences from the results indicated that the bulk resistivity of 1 Ω·cm; bulk lifetime of 2 ms; emitter (n+) doping concentration of 1×1020 cm−3 and shallow back surface field doping concentration of 1×1018 cm−3; surface recombination velocity maintained in the range of 102 and 103 cm/s obtained a solar cell efficiency of 19%. The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance.

Recombination of the carrier due to the surface state level traps could affect betavoltaic performance. Herein, we employed a theoretical 1-D carrier transport calculation to investigate the surface passivation effect in a planar [147Pm]-Si p-n junction betavoltaic cell and the results were verified using previous studies. In comparison to the ideal condition of the passivated surface, we predict a 10.74% power loss at the device, thus further research concerning the surface passivation layer for betavoltaic batteries might be necessary. • The surface passivation layer influences to battery performance were investigated. • The beta particle interaction with several types of surface passivation layer and p-n junction were simulated using MCNP. • The thickness of Pm2O3 metal source was optimized to reduce the effect of self-absorption. • The thinnest possible SiO2 film was implemented as front-surface passivation layer. [ABSTRACT FROM AUTHOR]

A simple yet reproducible method to deposit high quality aluminium oxide (AlO x) film by spray coating is presented. Excellent thickness and refractive index uniformity is demonstrated. The AlO x film was found to be nearly stoichiometric with an oxygen to aluminium ratio of 1.7 from X-ray photoelectron spectroscopy (XPS) measurements. An interfacial layer with thickness of about 2 nm was observed in transmission electron microscopy analysis. The interfacial layer was determined to be aluminium silicate from XPS data. Electrical characterization of the films on Czochralski (Cz) p-type silicon yielded dielectric constant of 6.5 and mean breakdown field of 4.7 MV cm−1. Interface state density of 8.7 × 10 10 eV−1cm−2 and fixed charge density of − 5.5 × 10 12 cm−2 were obtained from the electrical characterization of metal insulator semiconductor capacitors. The excellent interface quality with low interface state density and high negative charge is suitable for passivation of p-type silicon in solar cell applications. Effective surface recombination velocity of 12 cm s−1 and 48 cm s−1 were obtained for Cz p-type silicon surface for annealing temperature of 750°C and 790°C respectively without the use of capping layer. Image 1 [ABSTRACT FROM AUTHOR]

Surface recombination velocity on mesa sidewalls of SiC p-n diodes with various surface passivation conditions was evaluated from the device-size-dependent preexponential factor of recombination current (${J}_{\text {0rec}}$). The diodes passivated by SiO2 with postoxidation nitridation were dipped into HF to eliminate a shunt current, which is evoked by the nitrided SiO2 layer and disturbs the analysis of the recombination current. For accurate determination of the surface recombination velocity, an effective recombination zone width was precisely derived taking account of the distribution of carrier density in the depletion layer. The surface recombination velocity of the diodes without any passivation and with the postoxidation nitridation (NO annealing at 1250 °C for 70 min) was determined as $\text {1.2}\times \text {10}^{\text {7}}$ and $\text {6.0}\times \text {10}^{\text {5}}$ cm/s, respectively, which indicates that the postoxidation nitridation can reduce the surface recombination by a factor of about 20. We confirmed that TCAD simulation could reproduce the current–voltage characteristics by utilizing the extracted parameters. In addition, an evaluation method was proposed to determine the surface recombination velocity from the high-current region, where diffusion current is dominant. [ABSTRACT FROM AUTHOR]

CdTe-based detectors have the problem of Te-rich surface layers caused by Br etching, which is one of fabrication steps. Te-rich layer acts as a trapping center and serves as an additional source of charge carriers, thereby degrading transport property of charge carriers and enriching leakage current on surface of detector. To solve this problem, we introduced sodium hypochlorite (NaOCl) as a passivant, and investigated its effect on Cd 0.95 Mn 0.05 Te 0.98 Se 0.02 (CMTS), by analyzing chemical state of surface and its performance. After passivation with NaOCl, the results of X-ray photoelectron spectroscopy (XPS) shows the formation of tellurium oxide and elimination of water on CMTS surface, and CMTS presented enhanced performance with Am-241 radioisotope. Consequently, it is demonstrated that the passivation with NaOCl reduces leakage current, compensates defect, and elevates transport of charge carriers, thereby decreasing charge loss of carriers and improving performance of CMTS detector. • The CdMnTeSe(CMTS) was grown with Bridgman method to solve the segregation problems of CdZnTe. • The CMTS also suffered from Br-etching process, resulting in dangling bond and leakage current. • Passivant of sodium hypochlorite on CMTS surface enabled performance improvement of CMTS. [ABSTRACT FROM AUTHOR]