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2 results on '"spin amplifiers"'

1. Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys

Author

Yuttapoom Puttisong, Henning Riechert, Weimin Chen, Aaron J. Ptak, Irina Buyanova, Lutz Geelhaar, and Charles W. Tu

Subjects
Materials science, Gallium, Indium, Arsenicals, Condensed Matter::Materials Science, Materials Testing, Alloys, General Materials Science, Spin (physics), Computer Science::Distributed, Parallel, and Cluster Computing, Amplifiers, Electronic, Spintronics, Condensed matter physics, business.industry, Mechanical Engineering, Amplifier, Temperature, spin amplifiers, spintronics, room temperature, defects, semiconductors, Equipment Design, Condensed Matter Physics, Equipment Failure Analysis, Semiconductor, Semiconductors, Mechanics of Materials, Optoelectronics, Spin Labels, Condensed Matter::Strongly Correlated Electrons, business, Den kondenserade materiens fysik
Abstract

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency up to 1 GHz.

Published
2012
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2. Studies of Spin Amplifier for Logic Applications

Author

MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, Bhattacharya, Pallab, MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, and Bhattacharya, Pallab

Abstract

A ferromagnet/semiconductor based electrically controlled spin-current amplifier using a dual-drain non-local lateral spin valve was demonstrated. The spin polarization injected by the source into the channel was amplified at the second drain contact. An amplified current spin polarization of 100% was measured. The device provided controlled spin-current gain, which was varied in the entire range from -1 to +1. The controlled variation of amplifier gain with bias was also demonstrated. The maximum operating temperature of the device was as high as 150 K. A pure spin-current generation with zero charge current was also demonstrated using this device. This was the first experimental demonstration of a spin-current amplifier. The observations were explained in the framework of the spin drift-diffusion model. The principle of operation of the device was very generic and could be adapted to any ferromagnet/semiconductor heterostructure system., The original document contains color images. All DTIC reproductions will be in black and white.

Published
2007

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