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The deposition of energy in large and small sensitive volumes is studied after ultrahigh energy heavy-ion irradiation. We demonstrate that the energy deposition increase effect previously reported in p-i-n diode detectors due to delta electrons occurs only in large sensitive volumes, but not in small ones, typical of advanced microelectronic devices, such as the cells of a 3-D NAND Flash memories. We attribute this effect to the trajectories of the secondary electrons. [ABSTRACT FROM AUTHOR]

The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PIPS) detector in different facilities. Ion beams at ultrahigh energy lead to the formation of a second, unexpected peak in the deposited energy spectrum at slightly higher energy, in addition to the expected primary peak. Monte Carlo simulations are used to shed light on the origin of this phenomenon and the underlying physical mechanisms. The importance of accounting for secondaries’ production in the packaging materials of the diode and the mechanisms at play are highlighted in the discussion of the results. [ABSTRACT FROM AUTHOR]