1. Low driving voltage and high reliability 1.54 μm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect.
- Author
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Wu, Yunfeng, Pang, Houwei, Wang, Yuan, Lin, Sichen, Wang, Lei, Yang, Deren, and Li, Dongsheng
- Subjects
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LIGHT sources , *ELECTRIC fields , *OPTICAL rotation , *ENERGY transfer , *ION emission - Abstract
Erbium-doped SnO2 films and devices are fabricated on silicon substrates, and the 1.54 μm emission of erbium ions is realized via energy transfer from the SnO2 host. It is found that the luminescence intensity for SnO2:Er film can be enhanced, by increasing the optical activity and transition probability of Er3+ ions with fluorine codoping. Moreover, the device prepared by the fluorine codoped SnO2 film presents a low turn-on voltage of 1.6 V and an onset electric field of 0.18 MV/cm. The unpackaged device operated for 1028h in the atmosphere, then continued to function at 40 °C/30% RH during 1003 h, with less than 10% optical power attenuation. Through further optimizing the preparation process, the optimal device exhibits an optical power density of 38.5 μW/cm2 at 1.55 μm, due to the improved crystalline quality together with the number of sensitizers. This work demonstrates the practical application potential in silicon-based light sources from erbium-doped SnO2 devices. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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