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1. Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

Author

null Chucheva G. V., null Sivov A. A., null Naryshkina V. G., null Kuharskaya N. F., null Ilina T. S., null Starukhina S. S., and null Kiselev D. A.

Abstract

It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending on the alloying impurity material, which leads to changes in coercive voltage, internal displacement field and control coefficient. Keywords: lead-free ferroelectric films, bismuth titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.

Published
2022
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