14 results on '"mid-infrared radiation"'
Search Results
2. Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe
- Author
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Vladimir A. Antonov, Vladimir V. Bukin, Timophey V. Dolmatov, Konstantin N. Firsov, Evgeny M. Gavrishchuk, Igor G. Kononov, Petr A. Obraztsov, Sergey V. Podlesnykh, Mariya V. Ponarina, Anatoly A. Sirotkin, and Nikolay V. Zhavoronkov
- Subjects
Mid-infrared radiation ,Fe:ZnSe laser ,nanosecond pulse ,Applied optics. Photonics ,TA1501-1820 ,Optics. Light ,QC350-467 - Abstract
We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr3+:Yb3+:Ho3+:YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated with relaxation dynamics in Fe:ZnSe. The lasing regime obtained in this study provides a straightforward way to generate mid-IR single nanosecond pulses at moderate pump energies. Moreover, we found a relation between the lasing pulse duration and the concentration of Fe2+ doping ions, and we experimentally demonstrated pulse shortening in heavily doped active crystals. Single-pulse lasing with an FWHM pulse duration of ~2.8 ns was achieved in ZnSe crystals doped with 2.3 · 1019 cm-3 Fe2+ ions. The demonstrated single-pulse lasing regime is applicable for seeding high-power mid-IR laser systems.
- Published
- 2021
- Full Text
- View/download PDF
3. Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe.
- Author
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Antonov, Vladimir A., Bukin, Vladimir V., Dolmatov, Timophey V., Firsov, Konstantin N., Gavrishchuk, Evgeny M., Kononov, Igor G., Obraztsov, Petr A., Podlesnykh, Sergey V., Ponarina, Mariya V., Sirotkin, Anatoly A., and Zhavoronkov, Nikolay V.
- Abstract
We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr3+:Yb3+:Ho3+:YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated with relaxation dynamics in Fe:ZnSe. The lasing regime obtained in this study provides a straightforward way to generate mid-IR single nanosecond pulses at moderate pump energies. Moreover, we found a relation between the lasing pulse duration and the concentration of Fe2+ doping ions, and we experimentally demonstrated pulse shortening in heavily doped active crystals. Single-pulse lasing with an FWHM pulse duration of ∼2.8 ns was achieved in ZnSe crystals doped with 2.3 · 1019 cm-3 Fe2+ ions. The demonstrated single-pulse lasing regime is applicable for seeding high-power mid-IR laser systems. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
4. Formation of a Controllable Diffusion Barrier Layer on the Surface of Polydimethylsiloxane Films by Infrared Laser Irradiation.
- Author
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Tran HQ, Ur Rehman A, Fioux P, Airoudj A, Vandamme T, and Luchnikov V
- Abstract
Developing a diffusion barrier layer on material interfaces has potential applications in various fields such as in packaging materials, pharmaceuticals, chemical filtration, microelectronics, and medical devices. Although numerous physical and chemical methods have been proposed to generate the diffusion barrier layer, the complexity of fabrication techniques and the high manufacturing costs limit their practical utility. Here, we propose an innovative approach to fabricate the diffusion barrier layer by irradiating poly(dimethylsiloxane) (PDMS) with a mid-infrared (λ = 10.6 μm) CO
2 laser. This process directly creates a diffusion barrier layer on the PDMS surface by forming a heavily cross-linked network in the polymer matrix. The optimal irradiation conditions were investigated by modulating the defocusing distance, laser power, and number of scanning passes. The barrier thickness can reach up to 70 μm as observed by the scanning electron microscope (SEM). The attenuated total reflectance (ATR), electron dispersive X-ray (EDX), and X-ray photoelectron spectroscopy (XPS) analyses collectively confirmed the formation of the SiOx structure on the modified surface based on the decreased methyl group signal and the increased oxygen/silicon ratio. The diffusion test with the model drugs (rhodamine B and donepezil) demonstrated that the modified surface exhibits effective diffusion barrier properties and the rate of drug diffusion through the modified barrier layer can be controlled by the optimization of the irradiation parameters. This novel approach provides the possibility to develop a controllable diffusion barrier layer in a biocompatible polymer with prospective applications in the fields of pharmaceuticals, packing materials, and medical devices.- Published
- 2024
- Full Text
- View/download PDF
5. Advances in High-Power, Ultrashort Pulse DPSSL Technologies at HiLASE.
- Author
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Smrž, Martin, Novák, Ondřej, Mužík, Jiří, Turčičová, Hana, Chyla, Michal, Nagisetty, Siva Sankar, Vyvlečka, Michal, Roškot, Lukáš, Miura, Taisuke, Černohorská, Jitka, Sikocinski, Pawel, Chen, Liyuan, Huynh, Jaroslav, Severová, Patricie, Pranovich, Alina, Endo, Akira, and Mocek, Tomáš
- Subjects
ULTRASHORT laser pulses ,SOLID-state lasers ,OPTICAL parametric amplifiers - Abstract
The development of kW-class diode-pumped picosecond laser sources emitting at various wavelengths started at the HiLASE Center four years ago. A 500-W Perla C thin-disk laser with a diffraction limited beam and repetition rate of 50-100 kHz, a frequency conversion to mid-infrared (mid-IR), and second to fifth harmonic frequencies was demonstrated. We present an updated review on the progress in the development of compact picosecond and femtosecond high average power radiation sources covering the ultraviolet (UV) to mid-IR spectral range at the HiLASE Center. We also report on thin-disk manufacturing by atomic diffusion bonding, which is a crucial technology for future high-power laser development. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
6. Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe
- Author
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T. V. Dolmatov, E. M. Gavrishchuk, Mariya Ponarina, Anatoly A. Sirotkin, K N Firsov, I G Kononov, Nikolay V. Zhavoronkov, Vladimir V. Bukin, Sergey V. Podlesnykh, Petr A. Obraztsov, and Vladimir A. Antonov
- Subjects
Materials science ,Fe:ZnSe laser ,Physics::Optics ,02 engineering and technology ,01 natural sciences ,Ion ,law.invention ,010309 optics ,Condensed Matter::Materials Science ,020210 optoelectronics & photonics ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Applied optics. Photonics ,Electrical and Electronic Engineering ,nanosecond pulse ,business.industry ,Doping ,Pulse duration ,QC350-467 ,Optics. Light ,Nanosecond ,Laser ,Atomic and Molecular Physics, and Optics ,TA1501-1820 ,Pulse (physics) ,Full width at half maximum ,Optoelectronics ,business ,Lasing threshold ,Mid-infrared radiation - Abstract
We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr3+:Yb3+:Ho3+:YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated with relaxation dynamics in Fe:ZnSe. The lasing regime obtained in this study provides a straightforward way to generate mid-IR single nanosecond pulses at moderate pump energies. Moreover, we found a relation between the lasing pulse duration and the concentration of Fe2+ doping ions, and we experimentally demonstrated pulse shortening in heavily doped active crystals. Single-pulse lasing with an FWHM pulse duration of ~2.8 ns was achieved in ZnSe crystals doped with 2.3 · 1019 cm-3 Fe2+ ions. The demonstrated single-pulse lasing regime is applicable for seeding high-power mid-IR laser systems.
- Published
- 2021
- Full Text
- View/download PDF
7. Advances in High-Power, Ultrashort Pulse DPSSL Technologies at HiLASE
- Author
-
Martin Smrž, Ondřej Novák, Jiří Mužík, Hana Turčičová, Michal Chyla, Siva Sankar Nagisetty, Michal Vyvlečka, Lukáš Roškot, Taisuke Miura, Jitka Černohorská, Pawel Sikocinski, Liyuan Chen, Jaroslav Huynh, Patricie Severová, Alina Pranovich, Akira Endo, and Tomáš Mocek
- Subjects
diode-pumped solid-state lasers (DPSSL) ,high average power lasers ,Yb:YAG ,mid-infrared radiation ,thin-disk laser ,higher harmonic generation ,picosecond pulses ,UV generation ,optical parametric amplifier ,thin-disk bonding ,Technology ,Engineering (General). Civil engineering (General) ,TA1-2040 ,Biology (General) ,QH301-705.5 ,Physics ,QC1-999 ,Chemistry ,QD1-999 - Abstract
The development of kW-class diode-pumped picosecond laser sources emitting at various wavelengths started at the HiLASE Center four years ago. A 500-W Perla C thin-disk laser with a diffraction limited beam and repetition rate of 50–100 kHz, a frequency conversion to mid-infrared (mid-IR), and second to fifth harmonic frequencies was demonstrated. We present an updated review on the progress in the development of compact picosecond and femtosecond high average power radiation sources covering the ultraviolet (UV) to mid-IR spectral range at the HiLASE Center. We also report on thin-disk manufacturing by atomic diffusion bonding, which is a crucial technology for future high-power laser development.
- Published
- 2017
- Full Text
- View/download PDF
8. Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range.
- Author
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PISKORSKI, Ł., FRASUNKIEWICZ, L., and SARZAŁA, R. P.
- Subjects
- *
COMPARATIVE studies , *GALLIUM arsenide , *GALLIUM antimonide , *SEMICONDUCTOR lasers , *QUANTUM wells , *NUMERICAL analysis - Abstract
In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 µm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 µm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and - 2%, respectively. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
- View/download PDF
9. Quantum Sensing with Extreme Light
- Author
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Mirco Kutas, Björn Erik Haase, Felix Riexinger, Joshua Hennig, Patricia Bickert, Tobias Pfeiffer, Michael Bortz, Daniel Molter, Georg von Freymann, and Publica
- Subjects
ultraviolet radiation ,Nuclear and High Energy Physics ,nonlinear interferometry ,Statistical and Nonlinear Physics ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,X-ray radiation ,Computational Theory and Mathematics ,biphoton generation ,terahertz radiation ,mid-infrared radiation ,quantum sensing ,Electrical and Electronic Engineering ,Mathematical Physics - Abstract
Optical nonlinear conversion processes are ubiquitously applied to scientific as well as industrial tasks. In particular, nonlinear processes are employed to generate radiation in many frequency ranges. In plenty of these nonlinear processes, the generation of paired photons occurs - the so-called signal and idler photons. Although this type of generation has undergone a tremendous development over the last decades, either the generated signal or the idler radiation has been used experimentally. In contrast, novel quantum-based measurement principles enable the usage of both partners of the generated photon pairs based on their correlation. These measurement approaches have an enormous potential for future applications, as they allow to transfer information from one spectral range to another. In particular, spectral ranges where photon generation and detection is particularly challenging can benefit from this principle. Above all, these include the extreme frequency ranges, such as on the low-frequency side the mid to far infrared or even the terahertz spectral range, but also on the high-frequency side the ultraviolet or X-ray spectral range. In this review article, theoretical and experimental developments based on correlated biphotons are described specifically for the extreme spectral regions.
- Published
- 2022
- Full Text
- View/download PDF
10. Detection of lung cancer tissue by attenuated total reflection–Fourier transform infrared spectroscopy—a pilot study of 60 samples
- Author
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Sun, Xiaoliang, Xu, Yizhuang, Wu, Jinguang, Zhang, Yuanfu, and Sun, Kelin
- Subjects
- *
LUNG cancer diagnosis , *ATTENUATED total reflectance , *FOURIER transform infrared spectroscopy , *PILOT projects , *LUNG surgery , *DISCRIMINANT analysis , *DIAGNOSTIC imaging - Abstract
Abstract: Background: Attenuated total reflection–Fourier transform infrared (ATR–FTIR) spectroscopy could serve as a diagnostic tool for detecting and discriminating different diseases. The aim of this preliminary study was to distinguish malignant and nonmalignant lung tissues with ATR–FTIR spectroscopy. Methods: Sixty lung tissue samples were obtained from 30 patients who underwent pulmonary lobectomy. Samples were examined with ATR–FTIR spectroscopy before histologic diagnosis. Peak positions, intensities, and full width at half maximum of each absorbent band were measured, and the relative intensity ratios were calculated. Canonical discriminant analysis was performed to discriminate malignant and nonmalignant groups. Results: Twenty-two parameters were significantly different between malignant and nonmalignant groups. Peak intensity at 1546/cm, intensity ratio at 1120/cm, and full width at half maximum at 1303 and 1240/cm were selected as independent factors to form discriminant functions. The sensitivity and specificity of the discriminants were all 96.7%. Conclusions: ATR–FTIR spectroscopy is a promising method for the detection of malignant lung tissue and could be proved useful in lung tumor surgery. [Copyright &y& Elsevier]
- Published
- 2013
- Full Text
- View/download PDF
11. Novel Light Emitting Mechanisms Originating from Graphene Plasmons Near and Far from Equilibrium
- Author
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Kim, Laura
- Subjects
Materials Science ,Physics::Atomic and Molecular Clusters ,Nanophotonics ,Surface Plasmons ,Physics::Optics ,Plasmonics ,Physics::Chemical Physics ,Graphene ,Mid-infrared radiation - Abstract
Graphene supports surface plasmons bound to an atomically thin layer of carbon, characterized by tunable propagation characteristics and distinctly strong spatial confinement of the electromagnetic energy. Such collective excitations in graphene enable the strong interactions of massless Dirac fermions with light. In this work, I explore fundamental properties and applications of graphene plasmons both near and far from equilibrium. I discuss the ability of graphene plasmons to interact with its local environment in various forms of mid-infrared, optically active excitations, demonstrated by tunable graphene plasmon dispersions and an emergence of a new mode via addition of a monoatomic dielectric layer. Furthermore, the viability of graphene for optics-based applications and large-scale integration is epitomized by the experimental demonstration of perfect tunable absorption in a large-area chemically grown graphene by using a noble-metal-graphene metasurfaces. Using these properties of graphene plasmons, electronically tunable thermal radiation is demonstrated. Finally, I present theoretical predictions and experimental validations of nonequilibrium graphene plasmon excitations via ultrafast optical excitation, originating from a previously unobserved decay channel: hot plasmons generated from optically excited carriers. These studies reveal novel infrared light emitting processes, both spontaneous and stimulated, and provide a platform for achieving ultrafast, ultrabright mid-infrared light sources.
- Published
- 2019
- Full Text
- View/download PDF
12. Response of YBCO devices to mid-infrared radiation.
- Author
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Ruggiero, S.T., Zhong, C., Rennert, K.J., Vale, L.R., and Rudman, D.A.
- Subjects
- *
SUPERCONDUCTING thin films , *THIN film devices , *SEMICONDUCTOR lasers , *DETECTORS , *RESPONSIVITY (Detectors) - Abstract
We present results on the responsivity of YBCO thin-film devices to mid-infrared (25 /spl mu/m) radiation. Light is generated by pulsed diode-laser sources monitored by a calibrated HgCdTe detector. For the sample geometry studied here, we estimate an upper limit to the low-frequency responsivity, R of /spl sim/1000 V/W. [ABSTRACT FROM PUBLISHER]
- Published
- 1997
- Full Text
- View/download PDF
13. Generation and detection of high-speed pulses of mid-infrared radiation with intersubband semiconductor lasers and detectors.
- Author
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Paiella, R., Capasso, F., Gmachl, C., Bethea, C.G., Sivco, D.L., Baillargeon, J.N., Hutchinson, A.L., Cho, A.Y., and Liu, H.C.
- Abstract
Semiconductor lasers and detectors based on intersubband electron transitions are used to generate and measure high-speed pulses of mid-infrared radiation. In particular, we use a commercial comb generator to gain-switch a state-of-the-art 8-μm quantum cascade laser mounted in a high-speed package. The output pulses of this device are then detected with a small-area quantum-well infrared photodetector, also packaged for high-speed operation. Pulse widths shorter than 90 ps are directly measured with this system. Accounting for the finite response time of the detection electronics, a deconvolved duration of approximately 45 ps is extrapolated [ABSTRACT FROM PUBLISHER]
- Published
- 2000
- Full Text
- View/download PDF
14. Fano Resonance Membrane Reflectors from Mid-Infrared to Far-Infrared
- Author
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AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIR, Shuai, Yichen, Zhao, Deyin, Yang, Weiquan, Zhou, Weidong, Seo, Jung-Hun, Ma, Zhenqiang, Medhi, Gautam, Peale, Robert, Buchwald, Walter, Soref, Richard, AIR FORCE RESEARCH LAB HANSCOM AFB MA SENSORS DIR, Shuai, Yichen, Zhao, Deyin, Yang, Weiquan, Zhou, Weidong, Seo, Jung-Hun, Ma, Zhenqiang, Medhi, Gautam, Peale, Robert, Buchwald, Walter, and Soref, Richard
- Abstract
We report here single layer ultra-compact Fano resonance photonic crystal membrane reflectors at mid-infrared and far-infrared bands, based on single layer crystalline Si membranes. High performance reflectors were designed for surface-normal incidence illumination with center operation wavelengths of 1.5 um, 8 um, and 75 um, respectively. Large area patterned membrane reflectors were also fabricated and transferred onto glass substrates based on PDMS stamp assisted membrane transfer processes. Close to 100% reflection was obtained at 76 um, with a single layer Si membrane thickness of 18 um. Such Fano resonance based membrane reflectors, offer great opportunities for high performance ultra-compact dielectric reflectors at infrared and THz regions., The original document contains color images. Presented at the IEE Photonics Conference held on 25 Oct 2011. Sponsored in part by AFOSR. Prepared in cooperation with the Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, the Department of Electrical and Computer Engineering, University of Wisconsin-Madison, and the Physics Department, University of Central Florida, Orlando.
- Published
- 2011
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