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The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.

Abstract: Fe–Si alloy system was investigated on the magneto-resistance (MR) effects in a temperature range between 77K–RT and in high fields up to 30T. The samples were prepared by sputtering Fe(200nm) on n-Si(100) surface and variously annealed up to β-FeSi2 are obtained. The MR effects were found small less than several %, negative at RT and positive at T =77K for Fe-rich samples. For a sample at the stoichiometric β-Fe–Si2 on n-Si as a p–n junction, we found a positive MR as large as 30% at RT in B =30T. The physical mechanism of the large MR is tentatively given by the carrier freeze-out effect in between the p–n. [Copyright &y& Elsevier]