1. A 0.3-1.2V Schottky-Based CMOS ZTC Voltage Reference
- Author
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Pedro Toledo, Hamilton Klimach, David Cordova, Paolo Stefano Crovetti, and Sergio Bampi
- Subjects
Physics ,020208 electrical & electronic engineering ,Analytical chemistry ,Schottky diode ,02 engineering and technology ,Atmospheric temperature range ,voltage reference ,020202 computer hardware & architecture ,CMOS ,MOSFET ,0202 electrical engineering, electronic engineering, information engineering ,low voltage, voltage reference, Schottky diode, zero temperature coefficient (ZTC) condition ,low voltage ,zero temperature coefficient (ZTC) condition ,Sensitivity (control systems) ,Electrical and Electronic Engineering ,Low voltage ,Voltage reference ,Voltage - Abstract
A voltage reference based on MOSFETs operated under Zero Temperature Coefficient (ZTC) bias is proposed. The circuit operates in a power supply voltage range from 0.3 V up to 1.2 V and outputs three different reference voltages using Standard- $V_{T}$ (SVT), Low- $V_{T}$ (LVT), and Zero- $V_{T}$ (ZVT) MOS transistors biased near their ZTC point by a single PTAT current reference. Measurements on 15 circuit samples fabricated in a standard 0.13- $\mu \text{m}$ CMOS process show a worst-case normalized standard deviation $(\sigma /\mu)$ of 3% (SVT), 5.1% (LVT) and 10.8% (ZVT) respectively with a 75% of confidence level. At the nominal supply voltage of 0.45 V, the measured effective temperature coefficients (TCeff) range from 140 to 200 ppm/°C over the full commercial temperature range. At room temperature (25 °C), line sensitivity in the ZVT VR is just 1.3%/100 mV, over the whole supply range. The proposed reference draws around 5 $\mu \text{W}$ and occupies 0.014 mm2 of silicon area.
- Published
- 2019